Renesas M10162040108X0PWAY

Overview

M10162040108X0PWAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V or 2.7–3.6V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM (P-SRAM) in real-time data logging and firmware storage for industrial controllers.

For engineers reviewing the M10162040108X0PWAY datasheet, M10162040108X0PWAY pinout, M10162040108X0PWAY application, or M10162040108X0PWAY equivalent, key selection criteria include QSPI x4 interface timing, dual-voltage operation, hardware/software write protection, 256-byte augmented storage array, and deep power-down latency.

Technical Context

The M10162040108X0PWAY implements spin-transfer torque MRAM (STT-MRAM) on 40nm pMTJ technology, enabling true random access with SRAM-compatible read/write timing and infinite endurance. Its architecture supports Execute-In-Place (XIP), reducing command overhead during sequential reads.

It operates in Quad SPI (4-4-4) mode with rising-edge latching for commands and falling-edge data output in SDR; supports both hardware (WP# pin) and software (Status Register configuration) write protection; and includes two low-power states-Deep Power Down (3µs entry, 400µs exit) and Hibernate (3µs entry, 450µs exit)-with full data retention and register state preservation.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, exposed thermal pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V16-G and CY14B116N-ZSP25XI, the M10162040108X0PWAY uniquely combines QSPI x4 speed, dual-voltage operation, integrated augmented storage, and industrial-plus temperature rating-making it optimal for next-generation embedded systems requiring robust, high-throughput non-volatile memory without external components.

Availability

M10162040108X0PWAY is available at Aetrix Electronics and suitable for industrial control systems, medical diagnostics equipment, and network data switches requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH compliance.

Supply support for M10162040108X0PWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family is designed as persistent SRAM (P-SRAM) to replace battery-backed SRAM and legacy Flash/EEPROM in mission-critical embedded systems demanding instant-write non-volatility, high endurance, and industrial temperature resilience.

FAQ

What is the primary function of the M10162040108X0PWAY in an embedded system?

The M10162040108X0PWAY functions as a high-performance, non-volatile serial memory IC serving as persistent SRAM (P-SRAM). It provides instant-write capability, infinite endurance, and 20+ year data retention-enabling reliable firmware storage, real-time data logging, and configuration backup in industrial and medical systems without battery or refresh circuitry. Its QSPI interface and XIP support make M10162040108X0PWAY ideal for boot memory and runtime variable storage.

Does the M10162040108X0PWAY support both 1.8V and 3.3V operation?

Yes, the M10162040108X0PWAY supports dual supply voltage ranges: 1.71V–2.00V and 2.70V–3.60V. This allows direct integration into either 1.8V or 3.3V host systems without level-shifting circuitry. The device automatically adapts to the applied VCC; no configuration is required. Both voltage ranges are fully qualified across the −40°C to +105°C industrial-plus temperature range for M10162040108X0PWAY.

How does the write protection mechanism work on the M10162040108X0PWAY?

The M10162040108X0PWAY implements dual-layer write protection: hardware-based via the WP# pin (which locks the Status Register when asserted low), and software-based via configurable bits (BPSEL[2:0], TBSEL) in the Status Register that protect memory blocks or top/bottom regions. The 256-byte Augmented Storage Array also supports per-section write protection. These features ensure robust defense against accidental or malicious overwrites of firmware or calibration data in M10162040108X0PWAY deployments.

What package type is used for the M10162040108X0PWAY, and is it RoHS compliant?

The M10162040108X0PWAY uses an 8-pad DFN (WSON) package measuring 5.0 mm × 6.0 mm with an exposed thermal pad. It is fully RoHS and REACH compliant, meeting lead-free soldering requirements for modern electronics manufacturing. The package is pin-compatible with industry-standard 8-pin SOIC variants in the same family but offers a smaller footprint and improved thermal performance for M10162040108X0PWAY applications.

Can the M10162040108X0PWAY operate in low-power modes, and what are their characteristics?

Yes, the M10162040108X0PWAY supports two ultra-low-power modes: Deep Power Down (IDPD ≈ 10 µA typical) and Hibernate (IHBN ≈ 25 µA typical). Both retain full memory and register contents, require no data refresh, and preserve configuration settings. Entry/exit times are ≤3 µs and ≤450 µs respectively. These modes enable energy-efficient operation in battery-powered or intermittently powered systems using M10162040108X0PWAY as non-volatile storage.