Renesas M30042040054X0IWAR

Overview

M30042040054X0IWAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging and configuration storage.

For engineers reviewing the M30042040054X0IWAR datasheet, M30042040054X0IWAR pinout, M30042040054X0IWAR application, or M30042040054X0IWAR equivalent, key selection criteria include its 54MHz DDR QSPI speed, dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and industrial-grade thermal reliability.

Technical Context

The M30042040054X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with true random access, enabling byte-level reads/writes without erase cycles. Its QSPI interface supports 1-4-4 command-address-data width and both SPI Mode 0 (SDR/DDR) and Mode 3 (SDR only).

It integrates dedicated registers for status control, four configuration registers, device identification (64-bit unique ID), user-programmable serial number, and an independent 256-byte augmented storage array segmented into eight 32-byte protected sections - all accessible via standard SPI instructions including JEDEC Reset.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm body, wettable flank leads, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V05-G and CY14B104N-ZSP25XI, the M30042040054X0IWAR delivers higher density in smaller footprint, supports dual voltage rails and DDR QSPI for bandwidth efficiency, and provides superior data retention at elevated temperatures - making it optimal for next-generation industrial edge nodes.

Availability

M30042040054X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH compliance.

Supply support for M30042040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.

The M30042040054X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered specifically to replace battery-backed SRAM and serial Flash in mission-critical industrial and medical systems demanding zero-write-latency, infinite endurance, and guaranteed data retention.

FAQ

What is the maximum clock frequency supported by M30042040054X0IWAR in Double Data Rate mode?

The M30042040054X0IWAR supports 54MHz in Double Data Rate (DDR) mode, meaning data is sampled on both rising and falling clock edges - achieving effective throughput of 108MB/s in QPI 4-4-4 configuration. This is confirmed in the "Features" section of the datasheet under "Interface" specifications and validated in Table 3 (Interface Modes) and Table 4 (Clock Edge Usage). The M30042040054X0IWAR does not support 108MHz DDR - that speed applies only to the 0108X variant.

Does M30042040054X0IWAR require external voltage regulation when powered from a 3.3V rail?

No, the M30042040054X0IWAR operates natively across 2.70V–3.60V and includes internal regulation - no external LDO is needed for 3.3V systems. Its VCC pin accepts the full 3.3V rail directly, and the internal regulator ensures stable core voltage. This is specified in the "Operating Voltage Range" feature list and confirmed in Table 6 (Power Up/Down Timing – 3.0V), where VCC min/max are defined as 2.7V–3.6V. The M30042040054X0IWAR also supports 1.71V–2.00V operation for 1.8V systems.

How is write protection implemented on M30042040054X0IWAR, and can it be disabled?

The M30042040054X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, requires WP#EN bit = 1 in Status Register), and software-based via configuration bits (BP[2:0], TBSEL) in the Status Register. Protection can be fully disabled by clearing WP#EN and BP bits - but doing so removes safeguards against accidental writes to memory or registers. The WP# pin has no internal pull-up and must be actively driven; leaving it floating violates the specification in Table 2 (Signal Description).

What is the purpose and structure of the Augmented Storage Array in M30042040054X0IWAR?

The Augmented Storage Array in the M30042040054X0IWAR is a dedicated 256-byte memory region (addresses 0x000000–0x0000FF) separate from the main 4Mb array, divided into eight 32-byte programmable sections. Each section can be individually write-protected using configuration bits. It is intended for storing critical, infrequently updated data such as calibration constants, device serial numbers, or secure keys - as stated in Section 9 ("Augmented Storage Array Map") and Table 9 of the datasheet.

Is M30042040054X0IWAR pin-compatible with other members of the Mxxxx204 family, such as M10042040054X0IWAR?

Yes, the M30042040054X0IWAR shares identical pinout, package dimensions, and electrical interface with all Mxxxx204 variants including M10042040054X0IWAR - both use the same 8-pad DFN (WSON) footprint and signal assignments per Figure 3 and Table 2. However, they differ in manufacturer branding (Renesas vs. predecessor) and may have minor register initialization or qualification differences; always verify register defaults post-reflow per the "MRAM INITIALIZATION REQUIREMENT" note on page 16.