Renesas M30042040054X0PSAR

Overview

M30042040054X0PSAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 8-pin SOIC package. It delivers SRAM-compatible read/write latency with persistent data retention, targeting real-time data logging in factory automation and medical diagnostics systems.

For engineers reviewing the M30042040054X0PSAR datasheet, M30042040054X0PSAR pinout, M30042040054X0PSAR application, or M30042040054X0PSAR equivalent, key selection criteria include its 1.71–2.0V/2.7–3.6V dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and JEDEC reset compliance - all critical for deterministic embedded storage in safety-critical industrial environments.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque technology, enabling true random access with no erase cycles, unlimited endurance (>10¹⁵ cycles), and 20-year data retention at 105°C. Its QSPI interface supports 1-4-4 command-address-data configuration and both SPI Mode 0 (SDR/DDR) and Mode 3 (SDR only).

The device integrates eXecute-In-Place (XIP) mode to reduce instruction overhead during burst reads, plus dual low-power states - Deep Power Down (IDPD = 2µA typical) and Hibernate (IHBN = 10µA typical) - with full register and memory state preservation across transitions.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm, RoHS-compliant), surface-mount compatible with standard reflow profiles and legacy PCB footprints for SPI flash or EEPROM replacements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with CY14V104QN and FM25V04-G, M30042040054X0PSAR uniquely combines DDR QSPI bandwidth, dual-voltage operation, XIP capability, and 256-byte protected augmented storage - making it optimal for next-generation industrial controllers requiring deterministic performance and long-term reliability.

Availability

M30042040054X0PSAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-lifecycle assurance, and guaranteed availability through 2030.

Supply support for M30042040054X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M30042040054X0PSAR belongs to the Persistent SRAM (P-SRAM) family, designed specifically to replace battery-backed SRAM and legacy serial flash in applications demanding instant-write non-volatility, infinite endurance, and deterministic timing.

FAQ

What is the maximum clock frequency supported by M30042040054X0PSAR in Double Data Rate mode?

M30042040054X0PSAR supports up to 54MHz in Double Data Rate (DDR) mode, delivering effective 108MHz data transfer rates on both clock edges. This matches the timing specification encoded in its part number suffix '0054X', and is validated across the full −40°C to +105°C industrial-plus temperature range with 1.71–2.00V or 2.70–3.60V supply.

Does M30042040054X0PSAR require external hardware for write protection?

M30042040054X0PSAR supports both hardware and software write protection. The WP# pin provides hardware-level locking of the status register when pulled low, while software protection is implemented via configurable bits (BPSEL[2:0], TBSEL) in the status register. No external components are required - the WP# pin may be tied to VCC if hardware protection is unused.

Can M30042040054X0PSAR retain data during deep power-down mode?

Yes, M30042040054X0PSAR retains all stored data and register configurations during Deep Power Down mode (entered via B9h command). With typical current draw of 2µA and full state preservation, it enables ultra-low-power system sleep states without data loss or reinitialization overhead upon wake-up.

What is the purpose of the Augmented Storage Array in M30042040054X0PSAR?

The Augmented Storage Array is a dedicated 256-byte memory region in M30042040054X0PSAR, segmented into eight 32-byte sections, each independently programmable and write-protectable. It is intended for storing calibration data, security keys, or device-specific identifiers separate from the main 4Mb array - enhancing system robustness and regulatory compliance.

Is M30042040054X0PSAR pin-compatible with standard SPI flash devices in 8-pin SOIC packages?

M30042040054X0PSAR uses the industry-standard 8-pin SOIC footprint and identical pinout (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS) as common SPI NOR flash devices. However, protocol-level differences (e.g., QSPI command set, DDR timing, register map) require firmware adaptation - it is footprint-compatible but not drop-in software-replaceable.