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Renesas M30042040108X0IWAR

Part No.:
M30042040108X0IWAR
Manufacturer:
Renesas
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixM30042040108X0IWAR.pdf
Description:
IC RAM 4MBIT 108MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,897

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Product details

Overview

M30042040108X0IWAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing with persistent data retention, enabling fast, low-power, high-endurance storage in real-time control systems.

For engineers reviewing the M30042040108X0IWAR datasheet, M30042040108X0IWAR pinout, M30042040108X0IWAR application, or M30042040108X0IWAR equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, and real-world use cases for factory automation, medical diagnostics, and industrial monitoring where deterministic latency and zero write-cycle wear-out are critical.

Technical Context

The M30042040108X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with Quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes eXecute-In-Place (XIP) capability, dual power states (Deep Power Down and Hibernate), and hardware/software write protection via WP# pin and configurable status register bits.

It integrates a 256-byte Augmented Storage Array-separate from main memory-with per-section (32-byte) programmability and individual write protection. All operations occur under JEDEC-compliant reset behavior, with guaranteed non-volatility across >1015 write cycles and 20-year data retention at 85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Density 4Mb (512KB) - supports compact firmware logging and configuration storage without external backup battery or capacitor.
Interface QSPI (4-4-4) - enables 4-line bidirectional data transfer for up to 432MB/s effective throughput in SDR mode.
Clock Rate 108MHz SDR - matches high-speed microcontroller SPI peripherals without requiring clock dividers or timing margining.
Supply Voltage 1.71V–2.00V - compatible with 1.8V logic domains, eliminating level-shifting in modern low-power industrial SoCs.
Operating Temp −40°C to +85°C - qualified for uncontrolled industrial environments including PLC backplanes and motor drive enclosures.
Endurance >1015 write cycles - eliminates wear-leveling firmware overhead and enables true byte-addressable logging at full bus speed.
Data Retention 20 years at 85°C - ensures long-term reliability in sealed medical devices and infrastructure equipment with no field refresh required.

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, exposed pad, RoHS-compliant. Compatible with standard 8-pin SOIC footprint for layout reuse.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select Input Active-low enable; falling edge initiates instruction latch; high state places device in standby (ISB current).
WP# / IO[2] Bidirectional Write Protect / Data Line 2 In SDR mode: hardware write protect for status register when pulled low; in QPI mode: dedicated I/O for quad data transfer.
SI / IO[0] Serial Input / Data Line 0 Command/address/data input in SDR; primary I/O in single/dual/quad modes; must be driven-not floating.
CLK Clock Input Provides synchronous timing; rising edge latches command in all modes; both edges used for address/data in DDR.
IO[3] Bidirectional Data Line 3 Quad-mode I/O only; used for command/address/data in QPI (4-4-4); may be tied to VCC if unused.
SO / IO[1] Serial Output / Data Line 1 Data output in SDR begins on falling clock edge; bidirectional in dual/quad modes; high-impedance when deselected.
VCC Power Supply 1.71–2.00V core/I/O supply; requires local 100nF decoupling; ramp time ≤1000µs for reliable initialization.
VSS Ground Common reference for core and I/O; must be low-inductance connection to minimize noise coupling into MRAM array.

Key Features

Feature Design Value
STT-MRAM Technology 40nm pMTJ cell enables zero write latency penalty, no erase-before-write, and immunity to radiation-induced bit flips.
eXecute-In-Place (XIP) Reduces random access time by eliminating per-instruction command overhead-critical for real-time interrupt handlers.
Augmented Storage Array 256-byte user-programmable space with 8 independently protected 32-byte sections for secure calibration data or keys.
Hardware + Software Protection WP# pin + status register bits (BPSEL[2:0], TBSEL) allow hierarchical lock-down of memory regions without firmware intervention.
JEDEC Reset Support Ensures predictable startup state after power cycle or brownout-no external reset controller needed for deterministic boot.

Applications

Factory Automation Medical Diagnostics

Use Scenario: Storing real-time sensor calibration coefficients and motion profile logs in robotic servo drives.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory accessed at 108MHz during motion control loop execution.

Use Value: Eliminates battery-backed SRAM and avoids Flash wear-out during frequent parameter updates-ensuring 20+ year field life.

Use Scenario: Capturing transient ECG waveform buffers and device configuration snapshots in portable ultrasound units.

IC Role / Device Role / Timing Role: High-speed, low-power memory for burst capture and immediate recall without DMA stalls.

Use Value: Enables instant-on waveform replay and zero-latency parameter recovery after power interruption-meeting IEC 62304 Class C requirements.

Industrial Control And Monitoring Data Switches And Routers

Use Scenario: Holding firmware update staging area and runtime configuration in DIN-rail PLCs with no fan or heatsink.

IC Role / Device Role / Timing Role: Persistent SRAM replacement interfacing directly to ARM Cortex-M7 SPI peripheral.

Use Value: Supports seamless over-the-air updates with atomic sector writes and guaranteed data integrity-no checksum validation overhead.

Use Scenario: Storing MAC address tables and routing policy rules in carrier-grade Ethernet switches operating at −40°C to +85°C.

IC Role / Device Role / Timing Role: Low-latency configuration store accessed concurrently by multiple CPU cores via shared SPI bus.

Use Value: Delivers sub-100ns read access and infinite endurance-preventing table corruption during rapid topology changes or failover events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress Semiconductors FM25V04-G 4Mb F-RAM; 3.3V only (2.7–3.6V); max 40MHz SPI; no QPI or XIP support. Limited to lower-speed interfaces; lacks quad mode and execute-in-place-unsuitable for high-throughput logging. Select only if 3.3V supply and <40MHz bandwidth are acceptable; verify WP# timing compatibility with host MCU.
Infineon Technologies CY14B104N-ZSP25XI 4Mb nvSRAM; 3.0V supply; built-in lithium battery backup; 25MHz max SPI; no deep power down. Requires battery maintenance and failsafe circuitry; higher quiescent current in standby; no hibernate mode. Choose only when legacy nvSRAM footprint compatibility is mandatory and battery servicing is feasible in end equipment.

Compared with FM25V04-G and CY14B104N-ZSP25XI, the M30042040108X0IWAR offers 2.7× higher interface speed, 100% wider voltage range (1.8V), zero-battery operation, and deterministic low-power states-making it optimal for next-generation industrial edge nodes where size, power, and longevity are constrained.

Availability

M30042040108X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30042040108X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30042040108X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical systems demanding infinite endurance, fast write performance, and extended temperature operation.

FAQ

What is the maximum clock frequency supported by M30042040108X0IWAR in Single Data Rate mode?

The M30042040108X0IWAR supports up to 108MHz in Single Data Rate (SDR) mode, as indicated by the "0108" segment in its part number. This allows full-speed operation with modern microcontrollers without clock division, delivering 108MB/s effective throughput in 1-1-1 SPI mode and scaling higher in quad configurations. The M30042040108X0IWAR maintains timing compliance across its full industrial temperature range.

Does M30042040108X0IWAR require an external backup battery or capacitor for data retention?

No, the M30042040108X0IWAR is a true non-volatile memory based on STT-MRAM technology and retains data indefinitely without any external energy source. Unlike nvSRAM or battery-backed SRAM, it requires no capacitor, battery, or charge-pump circuit-reducing BOM cost, board area, and field failure risk. Data retention is guaranteed for 20 years at 85°C per JEDEC specifications.

Can M30042040108X0IWAR be used as a drop-in replacement for standard SPI Flash memory?

The M30042040108X0IWAR shares the same 8-pin SOIC/DFN footprint and SPI command set as many serial Flash devices, but it is not a functional drop-in replacement due to differences in write semantics: it supports true byte-level random writes without erase cycles, has no sector locking hierarchy, and uses different status register bits. Firmware must be adapted to leverage its P-SRAM advantages-especially XIP and write endurance.

What is the purpose of the Augmented Storage Array in M30042040108X0IWAR?

The M30042040108X0IWAR includes a dedicated 256-byte Augmented Storage Array, partitioned into eight 32-byte sections, each individually programmable and write-protectable. This area is intended for storing sensitive, infrequently updated data such as calibration constants, cryptographic keys, or device serial numbers-separately secured from the main memory array using independent protection registers.

How does the WP# pin function in M30042040108X0IWAR during Quad SPI operation?

In Quad SPI (QPI) mode, the WP# pin on the M30042040108X0IWAR serves exclusively as IO[2]-a bidirectional data line-and hardware write protection is disabled. To maintain data security in QPI, software-based protection via the Status Register (BPSEL[2:0], TBSEL) and Configuration Registers must be used. The pin must still be actively driven-not left floating-even when repurposed as an I/O.

M30042040108X0IWAR Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
4Mbit
Memory Organization:
1M x 4
Memory Interface:
-
Clock Frequency:
108 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M30042040108X0IWAR FAQ

1.How can I place an order for M30042040108X0IWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M30042040108X0IWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M30042040108X0IWAR reliable?

The price and inventory of M30042040108X0IWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30042040108X0IWAR is usually 5 days.

3.What payment methods are accepted for M30042040108X0IWAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30042040108X0IWAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M30042040108X0IWAR?

M30042040108X0IWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M30042040108X0IWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M30042040108X0IWAR?

For technical support, including M30042040108X0IWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30042040108X0IWAR requirements.

6.How does Aetrix verify that M30042040108X0IWAR is sourced from the original manufacturer or authorized distributors?

All M30042040108X0IWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30042040108X0IWAR meets industry standards.

7.What is the process for return or replacement of M30042040108X0IWAR?

All M30042040108X0IWAR units undergo pre-shipment inspection (PSI). If there is an issue with M30042040108X0IWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M30042040108X0IWAR part is unused and in its original packaging.

Return procedure for M30042040108X0IWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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