Renesas M30042040108X0PSAR

Overview

M30042040108X0PSAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pin SOIC package. It delivers SRAM-compatible read/write timing with persistent data retention, enabling real-time logging in factory automation controllers.

For engineers reviewing the M30042040108X0PSAR datasheet, M30042040108X0PSAR pinout, M30042040108X0PSAR application, or M30042040108X0PSAR equivalent, key selection criteria include its 108MHz SDR QSPI speed, hardware/software write protection, 256-byte augmented storage array, and −40°C to +105°C industrial-plus rating for embedded control systems.

Technical Context

The M30042040108X0PSAR implements a 40nm pMTJ spin-transfer torque MRAM array with true random access, supporting Quad SPI (4-4-4) and Single Data Rate mode at 108MHz. Its architecture includes dedicated command/control logic, dual power domains (1.8V core/I/O), and eXecute-In-Place (XIP) capability to eliminate per-access command overhead.

It integrates hardware-based write protection via WP# pin and software-configurable block protection through Status and Configuration Registers, alongside two low-power states-Deep Power Down (IDPD) and Hibernate (IHBN)-with full data and configuration retention during sleep.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V05-G and W25Q40EW, the M30042040108X0PSAR provides 108MHz QSPI throughput, infinite endurance, and true random write-making it optimal for high-frequency data logging where Flash erase latency or F-RAM density limits are unacceptable.

Availability

M30042040108X0PSAR is available at Aetrix Electronics and suitable for factory automation, industrial control, and medical diagnostics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30042040108X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30042040108X0PSAR belongs to Renesas' Persistent SRAM (P-SRAM) family, designed specifically to replace battery-backed SRAM and legacy Flash in mission-critical embedded systems demanding instant-write non-volatility.

FAQ

What is the operating voltage range for the M30042040108X0PSAR?

The M30042040108X0PSAR operates from 1.71V to 2.00V. This 1.8V nominal supply enables direct integration with modern low-voltage microcontrollers and eliminates the need for level-shifting circuitry. The device is not rated for 3.0V operation - using voltages outside this range may cause functional failure or reduced reliability. Always verify VCC stability within ±3% during active operation per Renesas specification.

Does the M30042040108X0PSAR support Quad SPI mode?

Yes, the M30042040108X0PSAR fully supports Quad SPI (4-4-4) mode at up to 108MHz in Single Data Rate configuration. It also supports Dual SPI and standard Single SPI modes. The QSPI interface allows simultaneous transfer of command, address, and data across four I/O lines, achieving 54MB/s effective bandwidth - significantly faster than standard SPI NOR Flash devices. Mode selection is controlled via Configuration Register settings.

What is the purpose of the Augmented Storage Array in the M30042040108X0PSAR?

The M30042040108X0PSAR includes a dedicated 256-byte Augmented Storage Array, organized into eight 32-byte programmable sections. Each section can be individually write-protected via configuration bits. This area is intended for storing critical, infrequently updated data such as device calibration coefficients, manufacturing lot codes, or cryptographic keys - separate from the main memory array to prevent accidental overwrites during firmware updates or logging operations.

How does the M30042040108X0PSAR handle power loss during write operations?

The M30042040108X0PSAR guarantees atomic write completion down to VCC = 1.71V. Unlike Flash, it requires no internal charge pumps or erase cycles, so writes complete in nanoseconds with no risk of partial writes or corruption during brownout. If VCC drops below 1.6V (VCC_CUTOFF), the device enters undefined state and must be reinitialized after power recovery - but all previously written data remains intact due to inherent non-volatility of the STT-MRAM cell.

Is the M30042040108X0PSAR pin-compatible with standard 8-pin SOIC SPI memories?

Yes, the M30042040108X0PSAR uses a standard 8-pin SOIC footprint (5.2mm × 5.2mm) with identical pinout to industry-standard SPI NOR Flash and EEPROM devices - CS#, WP#, SI, CLK, IO[3], SO, VCC, VSS. This enables drop-in replacement in existing designs without PCB layout changes, provided the host controller supports QSPI commands and the 1.71–2.00V supply range.