Renesas M30042040108X0PWAR

Overview

M30042040108X0PWAR from Renesas is a 4Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging systems requiring zero-write-latency non-volatility.

For engineers reviewing the M30042040108X0PWAR datasheet, M30042040108X0PWAR pinout, M30042040108X0PWAR application, or M30042040108X0PWAR equivalent, key selection criteria include QSPI x4 timing compliance, hardware write-protect (WP#) support, 256-byte augmented storage array programmability, and deep power-down exit time ≤400 µs.

Technical Context

The M30042040108X0PWAR implements a 40nm pMTJ STT-MRAM array with true random access, enabling byte-level reads/writes without erase cycles. Its command architecture supports QPI (4-4-4) mode and XIP (eXecute-In-Place), reducing instruction overhead for sequential memory access.

It integrates dual protection: hardware-based via WP# pin (active-low, no internal pull-up) and software-based via status register configuration bits (BPSEL[2:0], TBSEL). The device supports two low-power states-Deep Power Down (IDPD, 3 µs entry, 400 µs exit) and Hibernate (IHBN, 3 µs entry, 450 µs exit)-with full configuration retention.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm footprint, wettable flank design for automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V04-G and CY14B104N-ZSP25XI, the M30042040108X0PWAR delivers 2.7× higher interface bandwidth, native 1.8V operation, smaller WSON footprint, and deterministic zero-latency writes-making it optimal for next-generation industrial edge nodes demanding speed, size, and thermal resilience.

Availability

M30042040108X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30042040108X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30042040108X0PWAR belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy nvSRAM in mission-critical systems where data persistence, speed, and reliability cannot be compromised.

FAQ

What is the operating voltage range for the M30042040108X0PWAR?

The M30042040108X0PWAR operates from 1.71 V to 2.00 V. This 1.8V nominal supply range ensures compatibility with modern low-power microcontrollers and SoCs while maintaining robust noise margins. Operation outside this range may result in undefined behavior or data corruption. The device does not support 3.0V operation-M30042040108X0PWAR is specifically configured for the 1.8V voltage bin per its ordering code "1" in position 9 of the part number.

Does the M30042040108X0PWAR support Quad Peripheral Interface (QPI) mode?

Yes, the M30042040108X0PWAR supports full QPI (4-4-4) mode, using all four I/O pins (IO[0]–IO[3]) for command, address, and data transfer. This enables maximum throughput at 108 MHz SDR. QPI mode is enabled via configuration register settings and requires proper initialization sequence; it is not default on power-up. The M30042040108X0PWAR datasheet specifies timing for all QPI instruction types in Tables 3 and 4.

How is write protection implemented on the M30042040108X0PWAR?

The M30042040108X0PWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, no internal pull-up-must be driven), and software-based via status register bits (WP#EN, BPSEL[2:0], TBSEL). When WP#EN = 1 and WP# is low, the status register becomes read-only. Block protection can lock memory regions from 1 KB to 64 KB. Both schemes apply to main array and augmented storage array.

What is the purpose of the Augmented Storage Array in the M30042040108X0PWAR?

The M30042040108X0PWAR includes a dedicated 256-byte Augmented Storage Array, divided into eight 32-byte sections. Each section can be individually programmed and write-protected. It is intended for storing critical, infrequently updated data such as calibration coefficients, device serial numbers, or cryptographic keys-separate from main memory to prevent accidental overwrite during firmware updates or bulk operations.

What are the power-down capabilities of the M30042040108X0PWAR?

The M30042040108X0PWAR supports two ultra-low-power states: Deep Power Down (IDPD, <1 µA typical) and Hibernate (IHBN, ~10 µA). Both retain full memory and register contents. Entry requires specific JEDEC commands (B9h/BAh); exit times are guaranteed ≤400 µs (IDPD) and ≤450 µs (IHBN). These modes enable energy harvesting and battery-powered applications where standby current and wake latency are critical.