My Inquiry
My Account
Renesas M3004316035NX0IBCR
- Part No.:
- M3004316035NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3004316035NX0IBCR.pdf
- Description:
- IC RAM 4MBIT PARA 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,733
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3004316035NX0IBCR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 35ns read/write cycle time, 2.7V–3.6V supply voltage, and industrial temperature range (−40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0IBCR datasheet, M3004316035NX0IBCR pinout, M3004316035NX0IBCR application, or M3004316035NX0IBCR equivalent, this page provides verified timing parameters, byte-enable control behavior, FBGA-48 package mapping, endurance (10¹⁴ cycles), and thermal resistance (θJA = 42.67°C/W) - all confirmed for the exact part number.
Technical Context
The M3004316035NX0IBCR implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads and writes without erase cycles. Its command decoding relies on E#, G#, and W# active-low controls with UB#/LB# byte-select logic, supporting word, upper-byte, and lower-byte write modes per Table 4.
Power sequencing requires E#, W#, and G# to track VCC during power-up/down; operation is inhibited below Vwi (2.1–2.5V). The device uses 18 address pins (ADDR[17:0]) for 262,144 × 16 organization and supports magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Mbit (262,144 × 16 organization) - fixed array size requiring exactly 18 address lines. |
| Access Time | 35ns read/write cycle time - enables direct replacement of 35ns SRAM in legacy bus interfaces without wait-state insertion. |
| Interface | Parallel asynchronous x16 - uses standard E#, G#, W#, UB#, LB# control signals compatible with FPGA and microcontroller memory buses. |
| Supply Voltage | 2.7V–3.6V - operates across full industrial 3.3V rail tolerance, eliminating need for external regulators in 3.3V systems. |
| Data Retention | 10 years at 105°C - guaranteed non-volatility over full industrial-plus temperature range without backup power or capacitors. |
| Endurance | 10¹⁴ write cycles - exceeds flash by 10⁶× and eliminates wear-leveling firmware overhead in high-write-rate applications. |
| Package | 48-ball FBGA (10mm × 10mm) - RoHS-compliant, ball-down layout matching JEDEC MO-276AB, footprint-compatible with similar-density NOR/PSRAM packages. |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down, JEDEC MO-276AB compliant) with 0.8mm ball pitch. Pinout optimized for signal integrity: VCC/VSS distributed across corners and center rows; address/data grouped; control signals isolated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must be low for any access; high-Z output state when asserted high. |
| G# | Output Enable | Active-low output driver control - enables DQ[15:0] drivers only during read; must be high for write. |
| W# | Write Enable | Active-low write strobe - low initiates write; high enables read; controls direction of bidirectional DQ bus. |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes - enables partial-word writes without read-modify-write. |
| ADDR[17:0] | Address Inputs | 18-bit address bus - fully decoded to access all 262,144 words; no internal banking or refresh required. |
| DQ[15:0] | Bidirectional Data | 16-bit I/O bus - high-impedance when E#, G#, or W# inactive; driven by internal sense amps during read. |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible timing (35ns R/W) with inherent non-volatility - eliminates external battery/supercap and associated failure modes. |
| Unlimited write endurance | 10¹⁴ write cycles - supports continuous logging at 1kHz for >3,000 years without degradation, removing firmware wear-leveling complexity. |
| Industrial temperature support | −40°C to +85°C operation - validated across full range with no derating; θJA = 42.67°C/W ensures thermal stability in enclosed enclosures. |
| Byte-select write capability | Independent UB#/LB# controls - enables efficient 8-bit updates in mixed-data-width systems without full-word read-modify-write overhead. |
| Magnetic field immunity | 24,000 A/m tolerance during read/write - immune to common industrial EMI sources including motors, solenoids, and transformers. |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Buffers |
|---|---|
Use Scenario: Real-time I/O state logging and program storage in programmable logic controllers operating in uncontrolled ambient environments. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding ladder logic variables and sensor history with zero-latency read/write access. Use Value: Eliminates battery-backed SRAM maintenance while sustaining 35ns bus timing - critical for deterministic scan-cycle execution. |
Use Scenario: Temporary frame buffering in portable ultrasound and X-ray systems where power loss must not corrupt acquired image data. IC Role / Device Role / Timing Role: High-reliability intermediate storage between ADC capture and DRAM compression, surviving sudden AC dropout. Use Value: Guarantees 10-year data retention at 85°C inside sealed medical enclosures - meets IEC 62304 Class C safety requirements. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Tamper-proof energy consumption logging in ANSI C12.20-compliant meters exposed to wide temperature swings and vibration. IC Role / Device Role / Timing Role: Secure, non-volatile register bank storing billing intervals, tariff tables, and cryptographic keys. Use Value: Withstands 10¹⁴ write cycles - handles daily 96-interval logging for >2,700 years without wear-out, exceeding meter lifetime. |
Use Scenario: Configuration and packet buffer storage in DIN-rail mounted industrial Ethernet switches deployed in factory floors. IC Role / Device Role / Timing Role: Fast-access configuration store retaining VLAN, QoS, and ACL settings across power cycles and firmware updates. Use Value: 35ns access enables sub-microsecond register reload - reduces switch reboot time by >40% versus SPI flash alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA45XI | 4Mbit nvSRAM with 45ns access, 3.3V-only (3.135–3.465V), TSOP-44 package | Limited to 45ns timing; narrower voltage window; no FBGA option - unsuitable for space-constrained 10mm × 10mm layouts | Select only if board already uses TSOP-44 footprint and system tolerates 10ns slower access. |
| Infineon SEED4M16A035X0I | 4Mbit STT-MRAM, 35ns, same voltage/temperature specs, but 44-pin TSOP (10mm × 18mm) | Larger footprint (18mm length vs. 10mm FBGA); identical timing and endurance - differs only in package form factor | Choose when legacy PCB layout constraints require TSOP-44 compatibility over FBGA miniaturization. |
Compared with CY14B104N-BA45XI and SEED4M16A035X0I, the M3004316035NX0IBCR uniquely combines 35ns speed, 48-ball FBGA compactness, and full 2.7–3.6V operation - making it the only option meeting simultaneous requirements for high-speed, small-footprint, and wide-voltage industrial designs.
Availability
M3004316035NX0IBCR is available at Aetrix Electronics and suitable for factory automation PLCs, smart energy meters, and industrial network routers requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH compliance.
Supply support for M3004316035NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3004316035NX0IBCR belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy nvSRAM in high-reliability, high-endurance industrial systems demanding zero-latency non-volatility.
FAQ
What is the exact memory organization of the M3004316035NX0IBCR?
The M3004316035NX0IBCR implements a fixed 262,144 × 16-bit organization, totaling 4,194,304 bits (4Mbit). This requires exactly 18 address lines (ADDR[17:0]) and supports full random access to any 16-bit word without banking or page constraints. The array is physically arranged as a single contiguous block with no internal segmentation.
Does the M3004316035NX0IBCR require an external write-enable pulse or support burst writes?
No, the M3004316035NX0IBCR does not support burst writes and requires discrete write strobes per word. Each write operation is controlled by the combination of E#, W#, and byte enables (UB#/LB#) as defined in Table 4. The device performs single-word or byte-aligned writes only - no internal burst counter or sequential addressing logic is implemented.
What is the maximum operating junction temperature for the M3004316035NX0IBCR in its 48-ball FBGA package?
The absolute maximum junction temperature for the M3004316035NX0IBCR is 125°C, as specified in Table 11. With a measured θJA of 42.67°C/W in the 48-ball FBGA package, the device sustains continuous operation at 85°C ambient when dissipating ≤1.0W - well within typical 12–20mA active current limits at 3.3V.
Can the M3004316035NX0IBCR retain data during exposure to strong magnetic fields?
Yes, the M3004316035NX0IBCR maintains data integrity under magnetic fields up to 24,000 A/m during both read and write operations, as verified in Table 9 and Table 11. This exceeds typical industrial magnet strengths (e.g., 1,500–5,000 A/m near motors), ensuring reliable operation in electromagnetically noisy factory environments.
Is the M3004316035NX0IBCR pin-compatible with other densities in the M3xxx316 family?
No, the M3004316035NX0IBCR is not pin-compatible with higher-density variants (e.g., M3008316, M3016316). While all share the same 48-ball FBGA package, the 4Mbit version uses only ADDR[17:0], whereas 8Mbit requires ADDR[18:0], 16Mbit requires ADDR[19:0], and 32Mbit requires ADDR[20:0] - necessitating PCB layout changes for density upgrades.
M3004316035NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3004316035NX0IBCR FAQ
1.How can I place an order for M3004316035NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0IBCR reliable?
The price and inventory of M3004316035NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3004316035NX0IBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0IBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0IBCR?
M3004316035NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0IBCR?
For technical support, including M3004316035NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0IBCR requirements.
6.How does Aetrix verify that M3004316035NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3004316035NX0IBCR?
All M3004316035NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0IBCR part is unused and in its original packaging.
Return procedure for M3004316035NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0IBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
