My Inquiry
My Account
Renesas M3004316035NX0IBCY
- Part No.:
- M3004316035NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3004316035NX0IBCY.pdf
- Description:
- IC RAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:290
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3004316035NX0IBCY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0IBCY datasheet, M3004316035NX0IBCY pinout, M3004316035NX0IBCY application, or M3004316035NX0IBCY equivalent, this page provides verified timing parameters, TSOP-44 package mapping, byte-enable control behavior, endurance (10¹⁴ cycles), and thermal resistance (θJA = 40.05°C/W) - all confirmed from Renesas' official June 2023 datasheet.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and operates with E#, G#, and W# control signals in standard SRAM timing modes.
The device implements deterministic write latency (tAVAV = 35ns min), zero-latency read-after-write turnaround (tWLQZ ≤ 12ns), and power-up initialization requiring E#/W#/G# to track VCC. Magnetic immunity is rated to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns min read/write cycle - enables drop-in replacement for fast SRAM in legacy bus interfaces |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead required in NAND/EEPROM |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered storage without backup capacitors |
| Operating Temp | −40°C to +85°C - qualified for industrial control cabinets and factory-floor embedded systems |
| Package | 44-pin TSOP (10mm × 18mm) - footprint-compatible with legacy 44-pin SRAM and PSRAM devices |
Pinout & Package
44-pin TSOP (10mm × 18mm) package with standard JEDEC-compliant pin layout for parallel x16 memory interfaces. Pin assignments follow industry-standard address/data/control signal grouping for seamless PCB integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent undefined state |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers; high-Z when inactive to avoid bus contention |
| W# | Write Enable | Active-low write strobe; low = write, high = read; determines direction of bidirectional DQ bus |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[17:0] | Address Inputs | 18-bit address bus supporting full 4Mbit addressing (262,144 words × 16 bits) |
| DQ[15:0] | Bidirectional Data | x16 data bus with 10pF input capacitance; supports simultaneous read/write per byte-enable configuration |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and refresh circuitry while maintaining 35ns random-access performance |
| pMTJ STT-MRAM technology | 40nm node enables high density and radiation-tolerant operation up to 24,000 A/m magnetic field |
| Zero-erase write architecture | Direct byte/word programming without block erase delays - critical for real-time event logging |
| Industrial temperature qualification | Guaranteed operation from −40°C to +85°C with validated thermal resistance (θJA = 40.05°C/W) |
| RoHS/REACH compliance | Lead-free TSOP packaging meets global environmental directives for industrial equipment deployment |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and fault logs in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM, serving as persistent register file with sub-40ns access. Use Value: Eliminates battery maintenance and data loss risk during power interruption while sustaining deterministic 35ns read/write for motion control loop timing. | Use Scenario: Capturing and retaining image acquisition metadata and calibration tables in portable ultrasound and MRI subsystems. IC Role / Device Role / Timing Role: High-reliability boot memory and runtime parameter store interfaced directly to ARM Cortex-A9-based imaging processors. Use Value: Guarantees 10-year data retention at 85°C cabinet temperature and withstands magnetic fields up to 24,000 A/m near MRI magnets. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, tariff schedules, and consumption history in ANSI C12.22-compliant electricity meters deployed outdoors. IC Role / Device Role / Timing Role: Secure, long-life non-volatile memory for regulatory-compliant data logging with write endurance exceeding 10¹⁴ cycles. Use Value: Meets 20-year field lifetime requirements without wear leveling, reducing firmware complexity and certification burden. | Use Scenario: Storing routing tables, firmware patches, and session state in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Fast-access configuration memory enabling sub-millisecond failover during link redundancy switching. Use Value: Delivers 35ns read latency and zero recovery delay between read/write operations - critical for deterministic packet forwarding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA45XIT | 4Mbit nvSRAM with 45ns access, requires external capacitor for write-back; different pinout (44-pin SOJ vs TSOP) | Capacitor-dependent data retention introduces reliability risk in high-vibration environments | Select only if existing design uses SOJ footprint and can accommodate external hold-up capacitor |
| Infineon F-RAM FM24V04-G | 4Mbit parallel FRAM with 45ns access, unlimited endurance but lower data retention (10 years at 55°C only) | Limited thermal margin for 85°C industrial deployments; no magnetic immunity specification | Prefer for ultra-high-write-cycle applications below 55°C ambient, not for MRI-adjacent or high-temp use |
Compared with CY14B104N-BA45XIT and FM24V04-G, the M3004316035NX0IBCY offers superior thermal robustness (10 years @ 85°C), inherent magnetic immunity (24,000 A/m), and capacitor-free non-volatility - making it the optimal choice for mission-critical industrial and medical edge devices where reliability trumps marginal cost savings.
Availability
M3004316035NX0IBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, smart energy meters, and industrial network routers requiring stable component supply across extended product lifecycles.
Supply support for M3004316035NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial control and medical equipment, delivering true non-volatility without compromising on speed or endurance.
FAQ
What is the maximum operating temperature for M3004316035NX0IBCY?
The M3004316035NX0IBCY is rated for industrial temperature operation from −40°C to +85°C. This is explicitly defined in Table 17 of the Renesas datasheet (June 2023 revision), and its thermal resistance (θJA = 40.05°C/W) is characterized under these conditions. Operation beyond +85°C is not guaranteed and may violate absolute maximum ratings.
Does M3004316035NX0IBCY require an external capacitor for non-volatile write operation?
No, the M3004316035NX0IBCY does not require any external capacitor or backup power source. As a magnetoresistive RAM, it retains data inherently upon power removal. Unlike nvSRAM (e.g., Cypress CY14B series), the M3004316035NX0IBCY performs true instant-write non-volatility without write-back cycles or hold-up capacitors.
What package type is used by M3004316035NX0IBCY?
The M3004316035NX0IBCY uses a 44-pin TSOP package (10mm × 18mm), as confirmed by the "Valid Combinations" table on page 6 of the Renesas datasheet and the "44-Pin TSOP (4Mb)" package drawing on page 9. The 'BC' code in the part number denotes FBGA, but the suffix '0IBCY' maps to TSOP-44 per the ordering system in Figure 1 (page 5).
How many write cycles can M3004316035NX0IBCY endure before failure?
The M3004316035NX0IBCY guarantees a minimum of 10¹⁴ write cycles, as specified in Table 16 ("Endurance and Data Retention") of the Renesas datasheet. This endurance level is intrinsic to its pMTJ STT-MRAM technology and eliminates the need for wear-leveling algorithms required in flash or EEPROM.
Is M3004316035NX0IBCY compatible with standard SRAM timing protocols?
Yes, the M3004316035NX0IBCY implements SRAM-compatible asynchronous timing: 35ns read/write cycle time, separate byte enables (UB#/LB#), and standard E#/G#/W# control signaling. Its AC timing parameters (e.g., tAVAV, tELQV, tGLQV) align with JEDEC-standard SRAM waveforms, enabling direct substitution in existing designs using appropriate address/data bus widths.
M3004316035NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3004316035NX0IBCY FAQ
1.How can I place an order for M3004316035NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0IBCY reliable?
The price and inventory of M3004316035NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3004316035NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0IBCY?
M3004316035NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0IBCY?
For technical support, including M3004316035NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0IBCY requirements.
6.How does Aetrix verify that M3004316035NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3004316035NX0IBCY?
All M3004316035NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0IBCY part is unused and in its original packaging.
Return procedure for M3004316035NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0IBCY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
