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Renesas M3004316035NX0ITAR
- Part No.:
- M3004316035NX0ITAR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0ITAR.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:1,486
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Product details
Overview
M3004316035NX0ITAR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0ITAR datasheet, M3004316035NX0ITAR pinout, M3004316035NX0ITAR application, or M3004316035NX0ITAR equivalent, this page provides verified timing, package mapping, byte-enable control behavior, endurance (10¹⁴ cycles), and thermal resistance (θJA = 52.78°C/W) - all critical for deterministic write-critical embedded systems.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and chip/output/write controls (E#/G#/W#), allowing partial-word writes and bus turnaround optimization.
The device implements deterministic write timing per JEDEC-standard AC waveforms: tAVAV = 35ns min, tDVWH = 10ns min data setup before W# deassertion, and tWHAX = 12ns write recovery. Power-up initialization requires E#/W#/G# to track VCC with tPU ≥ 1ms, and operation is inhibited below Vwi = 2.1–2.5V to prevent corruption.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns min read/write cycle - enables direct SRAM drop-in replacement in legacy 35ns bus systems |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails and brownout-safe down to 2.1V |
| Operating Temp | −40°C to +85°C - qualified for industrial control cabinets and factory-floor environments |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware overhead in high-frequency logging |
| Data Retention | 10 years at 105°C - ensures archival integrity without backup power or refresh |
| Interface | Parallel asynchronous x16 with UB#/LB# byte enable - supports partial-word writes without bus contention |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), lead-free, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global select; must track VCC during power-up/down to prevent spurious writes |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; Hi-Z when high to allow bus sharing |
| W# | Write Enable | Active-low write strobe; low = write, high = read; determines direction of DQ bus |
| UB# | Upper Byte Enable | Active-low control of DQ[15:8]; enables 8-bit partial writes without affecting lower byte |
| LB# | Lower Byte Enable | Active-low control of DQ[7:0]; enables isolated 8-bit writes to lower half-word |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density; no address multiplexing required |
| DQ[15:0] | Bidirectional Data | x16 data bus; direction controlled by W#; high-impedance when G# or E# high |
| VCC / VSS | Power / Ground | Single 3.3V supply; VSS pin 1 must be held < VIL for functional operation |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or refresh - eliminates battery/SRAM+backup capacitor subsystems |
| SRAM-compatible timing | 35ns read/write cycles with no erase latency - integrates into existing SRAM bus controllers without timing redesign |
| Infinite endurance | 10¹⁴ write cycles - supports continuous logging at 1kHz for >3,000 years without degradation |
| Byte-selectable writes | Independent UB#/LB# enables allow 8-bit writes to either half of DQ[15:0] - reduces bus traffic vs full-word writes |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - suitable for motor drive and power electronics proximity |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Real-time I/O state capture and program variable storage in programmable logic controllers during power loss events. IC Role / Device Role / Timing Role: Non-volatile memory replacing battery-backed SRAM for deterministic 35ns register updates and instant power-fail save. Use Value: Eliminates battery maintenance, guarantees data retention across uncontrolled shutdowns, and sustains 100k+ daily write cycles over 10+ years. | Use Scenario: Buffering raw sensor data from ultrasound or MRI front-ends prior to DSP processing and archiving. IC Role / Device Role / Timing Role: High-speed, radiation-tolerant frame buffer with zero write latency - critical for maintaining image coherence during acquisition bursts. Use Value: Enables continuous 16-bit pixel streaming at >20MB/s without DMA stalls or flash wear-out concerns. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Storing tariff schedules, consumption logs, and firmware update staging in ANSI C12.22-compliant meters operating in outdoor enclosures. IC Role / Device Role / Timing Role: Temperature-stable (−40°C to +85°C) non-volatile memory for secure, tamper-resistant event logging with cryptographic timestamping. Use Value: Meets 10-year data retention requirement at 85°C ambient while consuming only 1.7mA standby current. | Use Scenario: Storing routing tables, port configurations, and packet buffering metadata in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Fast-access configuration store that survives vibration-induced power glitches and maintains state across hot-swappable module insertion. Use Value: Reduces boot time by 95% vs flash-based config reload; supports 100% uptime during firmware upgrades via atomic dual-bank emulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA25XI | 4Mbit nvSRAM with 25ns access, integrated lithium battery, 2.7–3.6V, −40°C to +85°C | Requires battery management circuitry; limited to 20-year battery life; higher standby current (5µA typical) | Select for legacy designs requiring identical pinout and guaranteed 25ns timing, but accept battery lifetime constraints and higher BOM cost. |
| Infineon Q802416035N | 4Mbit STT-MRAM, same 35ns timing, 48-ball FBGA only, −40°C to +105°C | No 44-pin TSOP option; wider temp range increases cost; identical endurance/retention specs | Choose when board space allows FBGA and extended temperature operation is mandatory - otherwise M3004316035NX0ITAR's TSOP offers better layout compatibility. |
Compared with CY14B104N-BA25XI, M3004316035NX0ITAR eliminates battery dependency and extends retention beyond product lifetime; versus Q802416035N, it provides TSOP packaging for legacy PCB reuse while matching core MRAM performance - making it optimal for industrial retrofit and cost-sensitive volume deployments.
Availability
M3004316035NX0ITAR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging buffers, and smart energy meter data logging requiring stable component supply across long production lifecycles.
Supply support for M3004316035NX0ITAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and NOR flash in deterministic, high-endurance, non-volatile data logging applications - prioritizing write speed, retention, and industrial reliability over density scaling.
FAQ
What is the maximum operating temperature for M3004316035NX0ITAR?
M3004316035NX0ITAR is rated for industrial temperature range: −40°C to +85°C. This is confirmed in Table 7 (Recommended Operating Conditions) and Valid Combinations documentation. The part number suffix '0I' explicitly denotes the industrial grade, distinct from '0P' (industrial plus, −40°C to +105°C). Operation above +85°C may violate absolute maximum ratings and invalidate warranty.
Does M3004316035NX0ITAR require a backup battery or capacitor?
No, M3004316035NX0ITAR does not require any backup power source. As an STT-MRAM device, it retains data inherently without power due to magnetic storage elements. Unlike nvSRAM (e.g., Cypress CY14B series), it eliminates batteries, supercapacitors, and associated charge-management circuitry - reducing BOM count and long-term maintenance risk.
What package type is used for M3004316035NX0ITAR?
M3004316035NX0ITAR uses a 44-pin TSOP (Thin Small Outline Package) measuring 10mm × 18mm. This is specified in the Ordering Options section (package code 'TA') and validated in Package Options (Page 9) and Package Drawings (Page 11). It is distinct from the 54-pin TSOP ('TB') and 48-ball FBGA ('BC') variants in the same family.
How many write cycles can M3004316035NX0ITAR endure?
M3004316035NX0ITAR guarantees 10¹⁴ write cycles, as documented in Table 16 (Endurance and Data Retention). This endurance level is intrinsic to its 40nm pMTJ STT-MRAM technology and is independent of temperature or voltage within spec. It far exceeds NOR flash (10⁵ cycles) and EEPROM (10⁶ cycles), enabling continuous logging without wear leveling.
Is M3004316035NX0ITAR pin-compatible with standard SRAM devices?
M3004316035NX0ITAR uses a standard parallel x16 asynchronous interface with E#, G#, W#, UB#, LB#, ADDR[17:0], and DQ[15:0] - matching common 4Mbit SRAM pinouts such as IS61LV25616AL. However, timing parameters (e.g., tWHAX = 12ns) and power sequencing (E#/W#/G# tracking VCC) differ; direct drop-in replacement requires validation of bus turnaround and initialization behavior per Figures 6–9.
M3004316035NX0ITAR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316035NX0ITAR FAQ
1.How can I place an order for M3004316035NX0ITAR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0ITAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0ITAR reliable?
The price and inventory of M3004316035NX0ITAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0ITAR is usually 5 days.
3.What payment methods are accepted for M3004316035NX0ITAR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0ITAR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0ITAR?
M3004316035NX0ITAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0ITAR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0ITAR?
For technical support, including M3004316035NX0ITAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0ITAR requirements.
6.How does Aetrix verify that M3004316035NX0ITAR is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0ITAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0ITAR meets industry standards.
7.What is the process for return or replacement of M3004316035NX0ITAR?
All M3004316035NX0ITAR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0ITAR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0ITAR part is unused and in its original packaging.
Return procedure for M3004316035NX0ITAR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0ITAR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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