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Renesas M3004316035NX0ITAY
- Part No.:
- M3004316035NX0ITAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0ITAY.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:1,406
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Product details
Overview
M3004316035NX0ITAY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C) in 44-pin TSOP package. It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0ITAY datasheet, M3004316035NX0ITAY pinout, M3004316035NX0ITAY application, or M3004316035NX0ITAY equivalent, this page provides verified technical context, validated pin functions, confirmed industrial operating conditions, and two rigorously cross-referenced alternative MRAM parts for drop-in evaluation.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with identical 35ns read and write cycle times-no erase latency or wear leveling required. Its parallel x16 interface operates asynchronously with independent upper/lower byte enables (UB#/LB#) and standard control signals (E#, G#, W#).
The device implements a full memory array organization of 262,144 × 16 bits, supports chip enable (E#) and output enable (G#) controlled read cycles, and requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down to ensure reliable initialization and prevent inadvertent writes during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns read/write cycle - enables deterministic timing in real-time PLC firmware |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails |
| Operating Temp | −40°C to +85°C - qualified for uncooled factory floor deployment |
| Endurance | 10¹⁴ write cycles - eliminates lifetime concerns in high-frequency logging applications |
| Data Retention | 1,000 years at 85°C - ensures data integrity across product lifecycle without backup power |
| Interface | Parallel asynchronous x16 - direct replacement for legacy SRAM/PSRAM in existing PCB layouts |
Pinout & Package
44-pin TSOP (10mm × 18mm), surface-mount, lead-free, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing to prevent spurious writes |
| G# | Output Enable | Active-low control for DQ[15:0] drivers during read; high-Z when inactive |
| W# | Write Enable | Active-low signal that gates write data flow; must be high for reads |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables partial-word writes without disturbing upper byte |
| ADDR[17:0] | Address Inputs | 18-bit address bus supporting full 4Mbit addressing (262,144 locations) |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with separate byte enables; supports concurrent upper/lower byte operations |
| VCC / VSS | Power / Ground | Single 2.7–3.6V supply; VSS pin 1 must be held low (< VIL) for proper operation |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and external EEPROM in data-logging nodes while maintaining 35ns access |
| pMTJ STT-MRAM technology | Enables infinite endurance and 10¹⁴ write cycles - no wear leveling logic required in host MCU |
| Industrial temperature range | Validated operation from −40°C to +85°C - suitable for DIN-rail mounted automation hardware |
| Byte-selectable write capability | UB#/LB# pins allow granular 8-bit writes, reducing bus traffic and power vs. full-word operations |
| Magnetic immunity | Withstands up to 24,000 A/m fields during read/write - robust in motor-drive proximity environments |
Applications
| Factory Automation Controllers | Multifunction Printers |
|---|---|
Use Scenario: Real-time logging of motion profiles, I/O states, and alarm history in PLCs and CNC motion controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing critical runtime parameters and fault logs without interrupting execution. Use Value: Guarantees zero-data-loss power fail recovery with 35ns deterministic access - replaces battery-backed SRAM and simplifies BOM. | Use Scenario: Storing print job metadata, calibration tables, and firmware update staging in enterprise-grade printers. IC Role / Device Role / Timing Role: High-reliability configuration storage accessed concurrently by multiple ASIC subsystems during boot and job processing. Use Value: Enables instant-on behavior and eliminates 10+ second firmware reload delays after power loss - improves user throughput. |
| Industrial Control & Monitoring | Smart Meters |
Use Scenario: Capturing sensor fusion data (voltage, current, temperature) at 1kHz in edge gateway telemetry units. IC Role / Device Role / Timing Role: High-endurance buffer between ADC sampling engine and secure MCU, supporting burst-write and sequential-read patterns. Use Value: Sustains 10¹⁴ write cycles over 15-year field life - removes periodic memory replacement maintenance in inaccessible installations. | Use Scenario: Storing tariff schedules, tamper-event timestamps, and energy consumption registers in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Secure, retention-guaranteed register bank accessible via SPI-to-parallel bridge for metrology SoC interfacing. Use Value: Meets 10-year data retention at 85°C per IEC 62056 - satisfies utility certification without external capacitors or supercaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit x16, 45ns access, 44-pin TSOP, same voltage/temp but slower timing | Suitable where 45ns latency is acceptable; lacks 35ns option for tight-timing systems | Select when cost sensitivity outweighs 10ns timing margin; verify timing slack in critical paths |
| Renesas M3004316045NX0ITAY | Same density/package/temp, but 45ns access time and identical pinout | Drop-in replacement if system timing budget allows relaxed cycle time | Use for qualification testing or legacy design reuse where 35ns is not required |
Compared with M3004316035NX0ITAY, MR2A16A trades 10ns speed for broader vendor availability, while M3004316045NX0ITAY offers identical form-factor and reliability with relaxed timing - both preserve byte-enable functionality and industrial temperature support.
Availability
M3004316035NX0ITAY is available at Aetrix Electronics and suitable for factory automation controllers, multifunction printers, and industrial monitoring systems requiring stable component supply across extended product lifecycles.
Supply support for M3004316035NX0ITAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316035NX0ITAY belongs to Renesas' Parallel MRAM family, engineered to replace battery-backed SRAM and legacy PSRAM in mission-critical industrial systems demanding infinite endurance and guaranteed data retention.
FAQ
What is the maximum operating temperature for M3004316035NX0ITAY?
M3004316035NX0ITAY is rated for industrial temperature operation from −40°C to +85°C. This specification is validated per Renesas' electrical test conditions and thermal resistance data (θJA = 40.05°C/W). The device maintains full 35ns read/write timing and 10¹⁴ endurance across this range. For extended-range applications up to +105°C, Renesas offers the M3004316035NX0PTAY variant.
Does M3004316035NX0ITAY require external power backup or capacitors?
No, M3004316035NX0ITAY does not require external power backup or hold-up capacitors. Its intrinsic non-volatility ensures data retention without auxiliary power. The device only requires stable 2.7–3.6V VCC with proper power sequencing (E#, W#, G# tracking VCC), and pin 1 (VSS) held low per datasheet requirements. No battery, supercapacitor, or charge-pump circuitry is needed.
Can M3004316035NX0ITAY be used as a direct replacement for standard SRAM?
Yes, M3004316035NX0ITAY is pin-compatible and functionally compatible with many 4Mbit x16 asynchronous SRAMs (e.g., IS61LV25616AL), sharing identical 44-pin TSOP footprint, control signals (E#, G#, W#), and byte-enable architecture (UB#/LB#). However, unlike SRAM, it retains data without power and requires no refresh - making it a true persistent SRAM (P-SRAM) drop-in for most existing designs.
What is the write endurance rating of M3004316035NX0ITAY?
M3004316035NX0ITAY guarantees a minimum write endurance of 10¹⁴ cycles, as specified in Table 16 of the Renesas datasheet. This value is derived from accelerated life testing under worst-case conditions (105°C) and represents a statistically validated lower bound. In typical industrial use at 85°C, actual endurance exceeds this rating by orders of magnitude - effectively unlimited for all practical system lifetimes.
How does the magnetic immunity of M3004316035NX0ITAY impact system design?
M3004316035NX0ITAY withstands magnetic fields up to 24,000 A/m during both read and write operations, per Table 9 and Table 11. This level exceeds typical interference from nearby motors, solenoids, or transformers in factory environments. System designers need no additional magnetic shielding or layout separation beyond standard PCB practices - enabling compact integration into motor drive modules and I/O terminal blocks.
M3004316035NX0ITAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316035NX0ITAY FAQ
1.How can I place an order for M3004316035NX0ITAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0ITAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0ITAY reliable?
The price and inventory of M3004316035NX0ITAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0ITAY is usually 5 days.
3.What payment methods are accepted for M3004316035NX0ITAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0ITAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0ITAY?
M3004316035NX0ITAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0ITAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0ITAY?
For technical support, including M3004316035NX0ITAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0ITAY requirements.
6.How does Aetrix verify that M3004316035NX0ITAY is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0ITAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0ITAY meets industry standards.
7.What is the process for return or replacement of M3004316035NX0ITAY?
All M3004316035NX0ITAY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0ITAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0ITAY part is unused and in its original packaging.
Return procedure for M3004316035NX0ITAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0ITAY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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