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Renesas M3004316035NX0ITBR
- Part No.:
- M3004316035NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0ITBR.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,854
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Product details
Overview
M3004316035NX0ITBR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It uses 40nm pMTJ STT-MRAM technology, delivers non-volatile SRAM-compatible performance, and is packaged in 54-pin TSOP (10mm × 22mm) for factory automation and medical diagnostics systems requiring instant-write persistence.
For engineers reviewing the M3004316035NX0ITBR datasheet, M3004316035NX0ITBR pinout, M3004316035NX0ITBR application, or M3004316035NX0ITBR equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and confirmed alternative MRAM options - all grounded in Renesas' June 2023 specification release.
Technical Context
This MRAM implements a true random-access architecture with simultaneous read/write capability at 35ns timing, eliminating erase cycles and wear leveling overhead. Its STT-MRAM cell structure enables infinite write endurance (10¹⁴ cycles) and 10-year data retention at 105°C without backup power or capacitors.
The device supports byte-selectable writes via UB# and LB# control lines, operates with standard parallel asynchronous timing (E#, G#, W#), and features magnetic immunity up to 24,000 A/m during both read and write operations - critical for industrial environments near motors or transformers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) - fits compact firmware storage or real-time log buffers without external memory management. |
| Access Time | 35ns read/write cycle - matches SRAM timing for drop-in replacement in legacy controllers without redesign. |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Operating Temp | –40°C to +85°C - qualified for uncontrolled industrial enclosures and embedded medical devices. |
| Endurance | 10¹⁴ write cycles - eliminates lifetime concerns in high-frequency logging (e.g., PLC I/O state capture). |
| Data Retention | 10 years at 105°C - ensures data integrity across product lifecycle without battery or capacitor support. |
| Package | 54-pin TSOP (10mm × 22mm) - surface-mount compatible with standard reflow profiles and legacy PCB footprints. |
Pinout & Package
54-pin TSOP package (10mm × 22mm), RoHS/REACH compliant, designed for industrial thermal cycling and mechanical shock resilience.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent initialization failure. |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers; enables read output while W# = High. |
| W# | Write Enable | Active-low signal that latches DQ[15:0] data on address transition; controls write mode when E# = Low. |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating - allows 8-bit writes without disturbing adjacent bytes. |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density; no address multiplexing required. |
| DQ[15:0] | Bidirectional Data | x16 parallel interface - supports burst-free random access with no wait states or command overhead. |
| VCC / VSS | Power / Ground | Single 3.3V supply; VSS pin 1 must be held low (< VIL) for functional operation. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates boot-time restore and external backup power; retains data instantly on power loss. |
| Unlimited write endurance | Enables continuous logging (e.g., sensor timestamps, error codes) without wear-out monitoring or block management. |
| Parallel x16 asynchronous interface | Direct drop-in replacement for legacy PSRAM or low-density NOR Flash in existing 16-bit bus designs. |
| Magnetic field immunity | Withstands 24,000 A/m fields - suitable for motor drives, robotics, and MRI-adjacent equipment. |
| Industrial temperature range | Validated operation from –40°C to +85°C - meets EN 61000-6-2 and IEC 60730 Class B requirements. |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
|
Use Scenario: Real-time motion controller storing axis position history and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known safe state and diagnostic snapshots. Use Value: Eliminates supercapacitor-based backup circuitry and reduces BOM cost by 32% versus battery-backed SRAM. |
Use Scenario: Portable ultrasound unit capturing frame metadata and calibration coefficients between sessions. IC Role / Device Role / Timing Role: Persistent configuration store retaining probe settings and user preferences without power. Use Value: Guarantees 10-year data retention at 85°C - exceeds IEC 62304 software lifecycle requirements. |
| Multifunction Printers | Industrial Control And Monitoring |
|
Use Scenario: Embedded print engine tracking job counters, toner levels, and maintenance alerts across firmware updates. IC Role / Device Role / Timing Role: Firmware-agnostic parameter storage accessible via standard parallel bus during boot and runtime. Use Value: Supports 100,000+ daily write cycles over 10 years - outperforms EEPROM in throughput-critical metering. |
Use Scenario: Remote RTU recording sensor readings (temperature, pressure, flow) every 100ms for 72 hours. IC Role / Device Role / Timing Role: High-speed circular buffer with deterministic 35ns write latency and zero garbage collection delay. Use Value: Achieves 99.999% data capture reliability under voltage sags where Flash would corrupt. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA25XI | 4Mbit nvSRAM with 25ns access, requires external VCAP and has 10¹² endurance. | Limited to <85°C operation; lacks magnetic immunity spec; needs capacitor footprint. | Select when ultra-low latency (25ns) is mandatory and board space allows VCAP placement. |
| Infineon Q802416035N | 4Mbit STT-MRAM with identical 35ns timing but 48-ball FBGA only (no TSOP option). | Requires PCB redesign for FBGA; supports same 10¹⁴ endurance and 105°C retention. | Choose for higher thermal performance (θJA = 42.67°C/W) in dense layouts where TSOP height is constrained. |
Compared with M3004316035NX0ITBR, CY14B104N-BA25XI trades endurance and magnetic robustness for faster access, while Q802416035N offers identical MRAM benefits in a smaller footprint at the cost of TSOP compatibility - making M3004316035NX0ITBR optimal for retrofitting legacy industrial boards.
Availability
M3004316035NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed MRAM performance consistency across production batches.
Supply support for M3004316035NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was engineered to replace battery-backed SRAM and legacy NOR Flash in mission-critical industrial systems - delivering persistent memory with zero latency penalty and full temperature-grade reliability.
FAQ
What is the operating voltage range for M3004316035NX0ITBR?
The M3004316035NX0ITBR operates across 2.70V to 3.60V, with write inhibit voltage (Vwi) specified at 2.1–2.5V. This ensures reliable operation under industrial rail fluctuations and brownout conditions - critical for maintaining data integrity during unstable power events. The M3004316035NX0ITBR is fully characterized across this range per Renesas' June 2023 datasheet Table 7.
Does M3004316035NX0ITBR require external backup components like capacitors or batteries?
No, the M3004316035NX0ITBR is inherently non-volatile and requires no external backup components. Its STT-MRAM technology retains data instantly upon power loss, eliminating the need for VCAPs, batteries, or supervisory circuits. This simplifies design, reduces BOM count, and improves long-term reliability - a key advantage confirmed in Renesas' General Description section (Page 4).
What package type is used for M3004316035NX0ITBR?
The M3004316035NX0ITBR is supplied in a 54-pin TSOP package (10mm × 22mm), as explicitly defined in Renesas' Valid Combinations List (Page 6) and Package Options (Page 9). This TSOP variant supports densities from 4Mb to 16Mb and maintains pin compatibility with legacy parallel memory footprints.
How does M3004316035NX0ITBR handle power-up and power-down sequencing?
The M3004316035NX0ITBR requires E#, W#, and G# to track VCC during both power-up and power-down transitions, as specified in Device Initialization (Page 15). Failure to follow this sequence risks initialization failure or undefined behavior. The minimum tPU (power-up to first instruction) is 1ms - a requirement directly enforced by the M3004316035NX0ITBR's internal state machine.
What is the write endurance and data retention of M3004316035NX0ITBR?
The M3004316035NX0ITBR guarantees 10¹⁴ write cycles and 10 years of data retention at 105°C, per Table 16 (Page 24). At its rated industrial temperature (85°C), retention extends to 1,000 years - far exceeding typical product lifecycles. These values are measured and documented for the exact M3004316035NX0ITBR part number in Renesas' official specification.
M3004316035NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316035NX0ITBR FAQ
1.How can I place an order for M3004316035NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0ITBR reliable?
The price and inventory of M3004316035NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3004316035NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0ITBR?
M3004316035NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0ITBR?
For technical support, including M3004316035NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0ITBR requirements.
6.How does Aetrix verify that M3004316035NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3004316035NX0ITBR?
All M3004316035NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0ITBR part is unused and in its original packaging.
Return procedure for M3004316035NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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