My Inquiry
My Account
Renesas M3004316035NX0ITBY
- Part No.:
- M3004316035NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0ITBY.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,261
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3004316035NX0ITBY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0ITBY datasheet, M3004316035NX0ITBY pinout, M3004316035NX0ITBY application, or M3004316035NX0ITBY equivalent, this page provides verified timing specs, TSOP-44 package mapping, byte-enable control logic, endurance (10¹⁴ cycles), and thermal resistance (θJA = 40.05°C/W) - all critical for deterministic embedded memory selection.
Technical Context
The M3004316035NX0ITBY implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads/writes without erase cycles. Its command interface relies on active-low E#, G#, and W# signals with UB#/LB# byte enables, supporting word, upper-byte, and lower-byte write modes per Table 4.
Power sequencing requires E#, W#, and G# to track VCC during power-up/down; operation is inhibited below Vwi (2.1–2.5V). The device uses 18 address pins (ADDR[17:0]) for 262,144 × 16 organization and exhibits magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns read/write cycle - enables deterministic real-time data capture without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and brownout tolerance |
| Operating Temp | −40°C to +85°C - qualified for industrial control cabinet environments |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered storage |
| Interface | Parallel asynchronous x16 - direct drop-in replacement for legacy SRAM/PSRAM sockets |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), surface-mount, lead-free, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing |
| G# | Output Enable | Active-low control of DQ[15:0] drivers during read; high during write |
| W# | Write Enable | Active-low signal selecting write mode; low = write, high = read |
| UB# | Upper Byte Enable | Active-low control of DQ[15:8]; used for partial-word writes |
| LB# | Lower Byte Enable | Active-low control of DQ[7:0]; enables granular 8-bit updates |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 262,144 locations; no multiplexing required |
| DQ[15:0] | Bidirectional Data I/O | x16 parallel bus; high-impedance when E#, G#, UB#, LB# inactive |
| VCC / VSS | Power / Ground | Single 3.3V supply; pin 1 VSS must be held < VIL for proper function |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates backup batteries/capacitors while retaining SRAM-like 35ns random access |
| STT-MRAM cell technology | 40nm perpendicular MTJ enables unlimited endurance and 10-year data retention at 105°C |
| Byte-selectable write architecture | UB#/LB# pins allow independent 8-bit writes - reduces bus contention and power spikes |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - suitable for motor drive proximity |
| Industrial thermal performance | θJA = 40.05°C/W in TSOP-44 - supports convection-cooled designs without heatsinks |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Real-time logging of sensor inputs and motion control trajectories in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last-known state and configuration before power loss. Use Value: Guarantees zero-data-loss recovery after unexpected shutdowns - meets IEC 61131-2 safety requirements. | Use Scenario: Buffering raw image frames from ultrasound or MRI front-end ADCs before compression. IC Role / Device Role / Timing Role: High-speed, radiation-tolerant frame buffer replacing battery-backed SRAM. Use Value: Eliminates periodic battery replacement and avoids data corruption during sterilization cycles. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Storing tariff schedules, tamper logs, and consumption history across power outages. IC Role / Device Role / Timing Role: Secure, long-retention event logger interfaced via parallel bus to metering SoC. Use Value: Achieves 10-year data retention at 85°C ambient - exceeds ANSI C12.20 accuracy certification. | Use Scenario: Caching routing tables and session state in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Low-latency configuration store accessible during FPGA reconfiguration. Use Value: Enables sub-millisecond failover without external NVRAM initialization delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA25XI | 4Mbit nvSRAM with 25ns access; requires external capacitor for write-back; 44-pin TSOP | Capacitor-dependent data retention introduces reliability risk in high-vibration environments | Select when legacy 25ns timing is mandatory and board space allows capacitor placement |
| Everspin MR25H40CDF | 4Mbit SPI MRAM; serial interface; 48-ball FBGA; 45ns access | Lacks parallel x16 bus - requires controller firmware rewrite and bandwidth reduction | Select only if system already uses SPI peripherals and layout cannot accommodate TSOP footprint |
Compared with CY14B104N-BA25XI, M3004316035NX0ITBY removes capacitor dependency and guarantees 10¹⁴ endurance; versus MR25H40CDF, it preserves existing parallel bus infrastructure and delivers faster 35ns timing - critical for deterministic control loops.
Availability
M3004316035NX0ITBY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and smart energy meters requiring stable component supply over extended product lifecycles.
Supply support for M3004316035NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial edge devices where data persistence, speed, and reliability cannot be compromised.
FAQ
What is the maximum operating temperature for M3004316035NX0ITBY?
The M3004316035NX0ITBY is rated for industrial temperature range: −40°C to +85°C. This specification is validated per Table 17 thermal resistance data (θJA = 40.05°C/W) and Table 6 operating conditions. Operation beyond 85°C risks violating the 10-year data retention guarantee at elevated junction temperatures.
Does M3004316035NX0ITBY require an external backup power source?
No, M3004316035NX0ITBY does not require any external backup power source. As a true MRAM device, it retains data non-volatily without batteries, supercapacitors, or charge pumps. All data persists through power cycling, making M3004316035NX0ITBY ideal for mission-critical logging where backup components introduce failure points.
How many address pins does M3004316035NX0ITBY use?
M3004316035NX0ITBY uses 18 address pins (ADDR[17:0]) to access its 4Mbit (262,144 × 16) memory array. This is explicitly defined in Page 8 Signal Description and confirmed in Page 14 Architecture section, which states "4Mbit: ADDR[17:0] – 18 Address pins for 04M devices." No address multiplexing is required.
Is M3004316035NX0ITBY pin-compatible with standard 44-pin TSOP SRAMs?
Yes, M3004316035NX0ITBY uses the industry-standard 44-pin TSOP (10mm × 18mm) footprint and matches pin functions for E#, G#, W#, UB#, LB#, ADDR[17:0], DQ[15:0], VCC, and VSS. Pin compatibility is confirmed by Renesas' Package Options section (Page 9) and Signal Description table (Page 8), enabling direct socket replacement of legacy parallel SRAMs.
What is the write endurance rating for M3004316035NX0ITBY?
M3004316035NX0ITBY has a guaranteed write endurance of 10¹⁴ cycles, as specified in Table 16 (Endurance and Data Retention). This value is derived from STT-MRAM physics and validated across process corners - eliminating the need for wear-leveling algorithms required in Flash or EEPROM-based alternatives.
M3004316035NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316035NX0ITBY FAQ
1.How can I place an order for M3004316035NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0ITBY reliable?
The price and inventory of M3004316035NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3004316035NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0ITBY?
M3004316035NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0ITBY?
For technical support, including M3004316035NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0ITBY requirements.
6.How does Aetrix verify that M3004316035NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3004316035NX0ITBY?
All M3004316035NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0ITBY part is unused and in its original packaging.
Return procedure for M3004316035NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0ITBY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
