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Renesas M3004316035NX0PBCR
- Part No.:
- M3004316035NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3004316035NX0PBCR.pdf
- Description:
- IC RAM 4MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,517
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Product details
Overview
M3004316035NX0PBCR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with true non-volatility, infinite endurance, and low-power operation in a 48-ball FBGA package.
For engineers reviewing the M3004316035NX0PBCR datasheet, M3004316035NX0PBCR pinout, M3004316035NX0PBCR application, or M3004316035NX0PBCR equivalent, this page provides verified technical context, validated pin functions, real-world use cases in factory automation and medical diagnostics, and confirmed alternative MRAM options for industrial embedded systems requiring zero-latency non-volatile storage.
Technical Context
The M3004316035NX0PBCR implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, enabling byte- and word-level random reads/writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and supports full 262,144 × 16 memory array addressing.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms. Write inhibit voltage (Vwi) is 2.1–2.5V; magnetic immunity is rated to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns read/write cycle - enables SRAM-compatible timing in legacy parallel bus designs |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails and brownout tolerance down to 2.1V |
| Operating Temp | −40°C to +105°C - qualified for extended industrial environments including motor drives and medical imaging |
| Endurance | 10¹⁴ write cycles - effectively unlimited for data logging, configuration storage, and firmware update buffers |
| Data Retention | 10 years at 105°C - ensures long-term reliability without backup batteries or capacitors |
| Package | 48-ball FBGA (10mm × 10mm) - surface-mount compatible with high-density PCB layouts |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down), RoHS/REACH compliant, thermal resistance θJA = 42.67°C/W (4–16Mb variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 1.7mA) when high |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers during read operations |
| W# | Write Enable | Active-low signal that latches data on DQ[15:0] into addressed location |
| UB# / LB# | Byte Enables | Independent control of upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 262,144-word addressing; ADDR[18:20] are no-connect for 4Mbit density |
| DQ[15:0] | Bidirectional Data I/O | True parallel x16 interface; supports simultaneous read/write per byte-enable state |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O or core voltage rails required |
| NC / DNU | No Connect / Do Not Use | Ball A20, C1, F1, G1, and others marked NC/DNU must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates need for external backup power or supercapacitors in critical data retention applications |
| 40nm pMTJ STT-MRAM technology | Enables single-cycle, in-place writes without erase latency - unlike Flash or EEPROM |
| Asynchronous parallel x16 interface | Direct drop-in replacement for legacy SRAM/PSRAM in existing 16-bit microcontroller or FPGA memory buses |
| 10¹⁴ write endurance | Supports continuous real-time data logging (e.g., sensor fusion buffers) over 20+ years at 100k writes/hour |
| 10-year data retention at 105°C | Validated for sealed, fanless industrial enclosures where ambient temperature exceeds 85°C |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing axis position history and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile frame buffer and configuration register bank interfaced directly to ARM Cortex-M7 MCU via parallel bus. Use Value: Eliminates battery-backed SRAM maintenance while sustaining 35ns access for deterministic PLC scan cycles. | Use Scenario: Portable ultrasound device capturing and preserving raw RF echo data between imaging sessions. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for DICOM header metadata and calibration coefficients. Use Value: Guarantees data integrity after 10,000+ cold starts and meets IEC 62304 Class C software safety requirements. |
| Multifunction Printers | Industrial Control And Monitoring |
Use Scenario: Embedded print engine retaining job queue state, toner level history, and network credentials during standby. IC Role / Device Role / Timing Role: Persistent working memory mapped to printer SoC's external memory interface with byte-select capability. Use Value: Reduces boot time by 92% vs. Flash-based initialization and avoids wear leveling overhead. | Use Scenario: Remote RTU recording sensor inputs (voltage, current, temperature) at 1kHz for 72 hours without external storage. IC Role / Device Role / Timing Role: Circular buffer memory accessed by dual-core RISC-V processor with lock-free write pointers. Use Value: Achieves 100% data capture fidelity under brownout conditions where VCC drops to 2.3V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit x16, 45ns access, 44-pin TSOP, −40°C to +85°C only | Limited to industrial (not industrial-plus) temp range; lacks 105°C qualification | Select when board space allows TSOP and operating environment stays ≤85°C |
| Cypress SEMPER™ Parallel NOR S29GL032S | 32Mbit x16, 70ns access, requires sector erase before write, 54-pin TSOP | Flash-based architecture introduces write latency and finite endurance (100k cycles) | Select only if higher density is mandatory and write frequency is low (<100 writes/day) |
Compared with Everspin MR2A16A and Cypress S29GL032S, the M3004316035NX0PBCR uniquely combines 35ns SRAM-equivalent timing, 105°C operation, and 10¹⁴ endurance in a compact FBGA - making it the sole option for high-throughput, thermally demanding industrial edge nodes requiring zero-compromise non-volatility.
Availability
M3004316035NX0PBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-plus temperature performance.
Supply support for M3004316035NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy NOR Flash in mission-critical industrial systems where data persistence, speed, and thermal resilience cannot be compromised.
FAQ
What is the memory organization of the M3004316035NX0PBCR?
The M3004316035NX0PBCR features a 4Mbit density organized as 262,144 words × 16 bits. This corresponds to an 18-bit address bus (ADDR[17:0]), with ADDR[18:20] designated as no-connect pins per the 4Mbit configuration. The device uses a single 3.3V supply and supports full random read/write access without erase cycles.
Does the M3004316035NX0PBCR require power sequencing during startup?
Yes, the M3004316035NX0PBCR requires strict power sequencing: control signals E#, W#, and G# must follow VCC during both power-up and power-down. The datasheet specifies a minimum power-up time (tPU) of 1ms after VCC reaches its minimum operating voltage (2.7V) before issuing the first command. Failure to observe this may result in undefined behavior or data corruption.
What is the maximum magnetic field tolerance of the M3004316035NX0PBCR?
The M3004316035NX0PBCR is rated for magnetic field immunity up to 24,000 A/m during both read and write operations. This specification ensures reliable operation in high-noise industrial environments near motors, transformers, or MRI equipment - a key differentiator from conventional Flash or DRAM technologies.
Can the M3004316035NX0PBCR be used as a direct replacement for standard SRAM?
Yes, the M3004316035NX0PBCR is functionally and electrically compatible with standard asynchronous SRAM in x16 parallel configurations, offering identical 35ns access timing and pinout structure. However, unlike volatile SRAM, it retains data without power - eliminating the need for backup batteries or capacitors while maintaining full read/write random access.
What packaging and compliance certifications apply to the M3004316035NX0PBCR?
The M3004316035NX0PBCR is supplied in a 48-ball FBGA package (10mm × 10mm, balls-down) and is fully RoHS and REACH compliant. It meets JEDEC standards for thermal resistance (θJA = 42.67°C/W) and has passed JESD78 latch-up testing. The package supports reflow soldering per IPC/JEDEC J-STD-020.
M3004316035NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3004316035NX0PBCR FAQ
1.How can I place an order for M3004316035NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0PBCR reliable?
The price and inventory of M3004316035NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3004316035NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0PBCR?
M3004316035NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0PBCR?
For technical support, including M3004316035NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0PBCR requirements.
6.How does Aetrix verify that M3004316035NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3004316035NX0PBCR?
All M3004316035NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0PBCR part is unused and in its original packaging.
Return procedure for M3004316035NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0PBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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