Renesas M3004316035NX0PBCY

Overview

M3004316035NX0PBCY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable, byte-addressable storage in real-time control systems.

For engineers reviewing the M3004316035NX0PBCY datasheet, M3004316035NX0PBCY pinout, M3004316035NX0PBCY application, or M3004316035NX0PBCY equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping to 48-ball FBGA, endurance and timing specifications per JEDEC-compliant test conditions, and two rigorously cross-referenced alternative MRAM parts for industrial-plus embedded designs.

Technical Context

The M3004316035NX0PBCY implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, delivering true random-access read/write without erase cycles. Its parallel asynchronous interface uses standard control signals (E#, G#, W#, UB#, LB#) and supports full-word, upper-byte, and lower-byte operations via dedicated enable pins.

It operates with deterministic 35ns minimum read/write cycle times under VCC = 3.0V and −40°C to +105°C, with write endurance rated at 10¹⁴ cycles and data retention of 10 years at 105°C. Power sequencing requires E#, W#, and G# to track VCC during power-up/down to prevent corruption.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS/REACH compliant, designed for high-density PCB layouts and thermal performance (θJA = 43.98°C/W for 32Mb variant; 42.67°C/W for 4–16Mb).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Compared with M3004316035NX0PBCY, MR2A16A offers identical density but trades 35ns speed and 105°C operation for lower cost and TSOP compatibility, while S29GL032N sacrifices endurance and random-write capability for higher density and broader legacy NOR ecosystem support.

Availability

M3004316035NX0PBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-life data retention, and industrial-plus temperature resilience.

Supply support for M3004316035NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The M3xxx316 family was engineered specifically for industrial and medical systems needing SRAM-speed non-volatility, eliminating battery-backed SRAM and wear-prone flash in mission-critical data logging and configuration storage.

FAQ

What is the exact memory organization of M3004316035NX0PBCY?

M3004316035NX0PBCY has a 4Mbit density organized as 262,144 words × 16 bits. This corresponds to an 18-bit address bus (ADDR[17:0]), supporting direct linear addressing without multiplexing. The device uses a single 3.3V supply and presents all 16 data bits (DQ[15:0]) simultaneously on each access, consistent with standard parallel SRAM interfaces.

Does M3004316035NX0PBCY require special power sequencing during startup?

Yes, M3004316035NX0PBCY requires E#, W#, and G# to follow VCC during both power-up and power-down. Per the datasheet, these control signals must remain stable relative to VCC until it reaches its valid operating range (2.7V–3.6V), with tPU ≤ 1ms. Failure to observe this causes undefined behavior or potential data corruption - no internal power-on reset circuitry compensates for improper sequencing.

Is M3004316035NX0PBCY pin-compatible with standard 48-ball FBGA SRAMs?

M3004316035NX0PBCY uses a 48-ball FBGA (10mm × 10mm) with signal assignments aligned to JEDEC-standard parallel memory pinouts, including E#, G#, W#, UB#, LB#, ADDR[17:0], and DQ[15:0]. While ball pitch and mechanical footprint match common 3.3V SRAMs, designers must verify VCC/VSS ball placement and NC/DNU locations against their target SRAM's package drawing before drop-in replacement.

What magnetic field immunity does M3004316035NX0PBCY provide?

M3004316035NX0PBCY maintains full functionality under static magnetic fields up to 24,000 A/m during both read and write operations. This immunity is inherent to its pMTJ STT-MRAM structure and is specified in Tables 9 and 11 of the datasheet. No shielding or derating is required in typical industrial environments, including proximity to motors, transformers, or MRI-adjacent equipment.

How does the 10¹⁴ write endurance of M3004316035NX0PBCY translate to real-world service life?

With 10¹⁴ guaranteed write cycles, M3004316035NX0PBCY supports continuous writing at 100,000 operations per second for over 31 years - far exceeding typical product lifecycles. In smart meters logging every 100ms, it delivers >3,000 years of error-free operation. This eliminates firmware wear-leveling, reduces validation effort, and removes field failure modes associated with flash endurance exhaustion.