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Renesas M3004316035NX0PTAY
- Part No.:
- M3004316035NX0PTAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0PTAY.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:3,592
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Product details
Overview
M3004316035NX0PTAY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with true non-volatility, infinite write endurance, and low-power operation-ideal for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0PTAY datasheet, M3004316035NX0PTAY pinout, M3004316035NX0PTAY application, or M3004316035NX0PTAY equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, and two rigorously cross-checked alternative MRAM options for industrial-grade non-volatile memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology to achieve deterministic, high-speed writes without wear-out mechanisms. Its parallel asynchronous interface supports byte- and word-level access via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
The device implements full random-access behavior: reads and writes occur at any address with identical 35ns timing, no erase cycles, and zero latency penalty between successive operations. Internal architecture includes row/column decoders, sense amplifiers, and address control logic fully compatible with legacy SRAM bus protocols.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns read/write cycle - enables drop-in replacement for 35ns SRAMs without timing redesign |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails |
| Operating Temperature | −40°C to +105°C - qualified for extended-temperature industrial control environments |
| Data Retention | 10 years at 105°C - guaranteed non-volatility under worst-case thermal stress |
| Write Endurance | 10¹⁴ cycles - effectively unlimited for all embedded logging and configuration storage use cases |
| Interface Type | Parallel asynchronous x16 - requires no clock, no initialization sequence, direct CPU bus connection |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), lead-free, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must follow VCC during power-up/down to prevent corruption |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high-Z when deasserted |
| W# | Write Enable | Active-low write strobe; determines direction of DQ bus (write when low, read when high) |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes without affecting lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables partial-word writes without affecting upper byte |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density; no address multiplexing required |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; supports simultaneous read/write on separate bytes via UB#/LB# |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; VSS pin 1 must be held < VIL for proper function |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Retains data without backup power while delivering 35ns random-access read/write - eliminates battery/SRAM+flash hybrid designs |
| True random access | No erase blocks or page constraints; any address writable at any time, enabling real-time ring buffer and state variable storage |
| Industrial-plus temperature rating | Validated operation from −40°C to +105°C - suitable for enclosed motor drives and outdoor smart meters |
| Byte-selectable write capability | Independent UB#/LB# controls allow 8-bit updates without disturbing adjacent data - critical for atomic firmware parameter updates |
| High magnetic immunity | Withstands 24,000 A/m fields during read/write - robust in proximity to motors, solenoids, and transformers |
Applications
| Factory Automation PLC | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and motion profile parameters in programmable logic controllers with zero tolerance for data loss during power interruption. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing immediate read/write access to configuration registers and runtime variables. Use Value: Eliminates need for external EEPROM or battery-backed SRAM, reducing BOM count and field failure risk from capacitor aging or battery leakage. |
Use Scenario: Capturing transient image acquisition metadata and DICOM header fields in portable ultrasound units where power may be cycled between scans. IC Role / Device Role / Timing Role: High-reliability frame metadata buffer that persists across cold starts without delay or recovery sequence. Use Value: Ensures diagnostic traceability by guaranteeing metadata integrity even after unexpected shutdown - meets IEC 62304 Class C software requirements. |
| Smart Energy Meter | Industrial Network Router |
Use Scenario: Recording tamper events, tariff switching logs, and cumulative kWh values in ANSI C12.20-compliant electricity meters deployed in uncontrolled outdoor enclosures. IC Role / Device Role / Timing Role: Secure, long-retention event logger interfacing directly to microcontroller's parallel bus with deterministic write latency. Use Value: Achieves 10-year data retention at 105°C ambient - satisfies utility-grade meter certification without thermal derating or refresh algorithms. |
Use Scenario: Storing routing table snapshots and firmware update staging buffers in DIN-rail mounted industrial Ethernet switches operating in factory-floor cabinets. IC Role / Device Role / Timing Role: Low-latency configuration store enabling sub-millisecond failover and zero-downtime firmware activation. Use Value: Enables atomic dual-bank firmware updates with guaranteed rollback - removes dependency on external flash programming delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit, 45ns access, 3.3V, 44-pin TSOP - slower timing, same density and package footprint | Requires timing margin adjustment in 35ns-critical systems; otherwise pin-compatible | Select when system timing budget allows 45ns cycles and long-term supply continuity is prioritized over peak speed |
| Renesas M3004316045NX0PTAY | Same 4Mbit density, package, and voltage; 45ns access instead of 35ns - identical feature set and reliability specs | Drop-in replacement where 45ns timing suffices; shares same qualification, thermal, and magnetic immunity ratings | Choose for cost-optimized sourcing when 35ns performance is not required - identical footprint and firmware compatibility |
Compared with M3004316035NX0PTAY, MR2A16A trades 10ns speed for broader historical supply chain maturity, while M3004316045NX0PTAY offers identical reliability and packaging at relaxed timing - both preserve byte-select write capability and 105°C operation without layout changes.
Availability
M3004316035NX0PTAY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging subsystems, and smart energy metering requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for M3004316035NX0PTAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and serial flash in high-reliability industrial systems demanding instant-on non-volatility, infinite endurance, and extended-temperature operation.
FAQ
What is the maximum operating temperature for M3004316035NX0PTAY?
M3004316035NX0PTAY is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. The device maintains full 35ns timing and data retention compliance across this entire range.
Does M3004316035NX0PTAY require a power-on reset sequence?
No, M3004316035NX0PTAY does not require a software reset. However, hardware sequencing is mandatory: E#, W#, and G# signals must track VCC during both power-up and power-down transitions. Failure to follow this requirement risks data corruption, as specified in Section 15 (Device Initialization) of the datasheet.
Can M3004316035NX0PTAY be used as a direct replacement for standard SRAM?
Yes, M3004316035NX0PTAY is designed as a functional and pin-compatible replacement for 4Mbit ×16 35ns SRAMs. It accepts identical control signals (E#, G#, W#, UB#, LB#), uses the same address/data bus timing, and requires no firmware changes - though its non-volatility eliminates need for backup power circuits.
What is the write endurance rating of M3004316035NX0PTAY?
M3004316035NX0PTAY guarantees ≥10¹⁴ write cycles per memory location, as documented in Table 16 (Endurance and Data Retention). This exceeds typical SRAM endurance and eliminates wear-leveling requirements - making it suitable for continuous logging applications with high-frequency writes.
Which package type does M3004316035NX0PTAY use?
M3004316035NX0PTAY uses a 44-pin TSOP package (10mm × 18mm), as defined in the part number suffix 'TA' and confirmed in Pages 9 and 11 of the Renesas datasheet. This package supports only the 4Mbit density variant and is RoHS/REACH compliant.
M3004316035NX0PTAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316035NX0PTAY FAQ
1.How can I place an order for M3004316035NX0PTAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0PTAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0PTAY reliable?
The price and inventory of M3004316035NX0PTAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0PTAY is usually 5 days.
3.What payment methods are accepted for M3004316035NX0PTAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0PTAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0PTAY?
M3004316035NX0PTAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0PTAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0PTAY?
For technical support, including M3004316035NX0PTAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0PTAY requirements.
6.How does Aetrix verify that M3004316035NX0PTAY is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0PTAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0PTAY meets industry standards.
7.What is the process for return or replacement of M3004316035NX0PTAY?
All M3004316035NX0PTAY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0PTAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0PTAY part is unused and in its original packaging.
Return procedure for M3004316035NX0PTAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0PTAY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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