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Renesas M3004316035NX0PTBR
- Part No.:
- M3004316035NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0PTBR.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,097
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Product details
Overview
M3004316035NX0PTBR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling real-time logging in factory automation controllers without battery backup.
For engineers reviewing the M3004316035NX0PTBR datasheet, M3004316035NX0PTBR pinout, M3004316035NX0PTBR application, or M3004316035NX0PTBR equivalent, this page provides verified specifications, validated package mapping, confirmed pin functions, and two rigorously cross-checked alternative MRAM parts for industrial edge devices requiring zero-write-latency non-volatility.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, delivering true random access with symmetric 35ns read and write timings - eliminating erase cycles and wear leveling logic required by Flash. Its parallel x16 interface operates asynchronously with independent upper/lower byte enables (UB#/LB#), supporting legacy SRAM-based memory controllers without protocol translation.
The device implements deterministic, single-cycle write operations controlled via E#, W#, and G# signals, with full compatibility in timing and voltage levels with standard 3.3V SRAM systems. Power-up initialization requires synchronized assertion of control signals after VCC reaches ≥2.7V, and write inhibition activates below Vwi = 2.1–2.5V to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) - fits compact firmware/data buffers in space-constrained industrial modules |
| Access Time | 35ns read/write cycle - matches SRAM timing for drop-in replacement in legacy designs without controller rework |
| Supply Voltage | 2.7V–3.6V - interoperable with standard 3.3V I/O domains and tolerant of rail droop in noisy factory environments |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and high-ambient industrial PLCs |
| Data Retention | 10 years at 105°C - ensures decade-long data integrity in unpowered storage without refresh or backup power |
| Endurance | 10¹⁴ write cycles - supports continuous logging (e.g., sensor sampling at 1kHz) for >3,000 years without degradation |
| Package | 54-pin TSOP (10mm × 22mm) - surface-mount compatible with existing SRAM footprints and reflow profiles |
Pinout & Package
54-pin TSOP package (10mm × 22mm), RoHS-compliant, industrial-plus grade. Pin assignments validated per Renesas datasheet Figure 2 and Page 9 top-view diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable: disables all internal operations and reduces standby current to ≤2.5mA when high |
| G# | Output Enable | Active-low output driver control: places DQ[15:0] in Hi-Z when high, enabling bus sharing |
| W# | Write Enable | Active-low write strobe: latches DQ[15:0] data on falling edge when E# is low and G# is high |
| UB# | Upper Byte Enable | Active-low select for DQ[15:8]: allows partial-word writes without disturbing lower byte contents |
| LB# | Lower Byte Enable | Active-low select for DQ[7:0]: enables independent 8-bit updates aligned with legacy byte-oriented protocols |
| ADDR[0]–ADDR[17] | Address Inputs | 18-bit address bus (A0–A17): selects one of 262,144 × 16-bit locations; no address multiplexing required |
| DQ[0]–DQ[15] | Bidirectional Data I/O | x16 parallel data path: transfers full word on every cycle; supports simultaneous read-modify-write via UB#/LB# |
| VCC / VSS | Power / Ground | Single 3.3V supply domain: eliminates need for separate core/I/O rails; decoupling required per JEDEC standards |
Key Features
| Feature | Design Value |
|---|---|
| STT-MRAM Technology | 40nm pMTJ cell enables 35ns deterministic writes with zero latency penalty vs. reads - no erase-before-write overhead |
| Persistent SRAM Interface | Fully compatible with standard SRAM timing and control signals (E#/G#/W#), enabling direct hardware substitution |
| Byte-Selectable Writes | Independent UB# and LB# pins allow 8-bit granularity updates - critical for atomic flag setting and status register modification |
| Extended Temperature Range | −40°C to +105°C operation validated across full voltage range - suitable for sealed enclosures in solar inverters and motor drives |
| High Magnetic Immunity | Withstands 24,000 A/m fields during read/write - immune to interference from nearby relays, solenoids, and power inductors |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging Buffer |
|---|---|
Use Scenario: Real-time motion control loop with sub-millisecond jitter tolerance and power-fail-safe parameter storage. IC Role / Device Role / Timing Role: Non-volatile program memory and runtime configuration store; replaces battery-backed SRAM + EEPROM combo. Use Value: Eliminates battery maintenance, guarantees instant recovery after unexpected shutdown, and sustains 100k+ daily write cycles over 10+ years. |
Use Scenario: High-speed image frame buffering in portable ultrasound units where data must survive immediate power loss. IC Role / Device Role / Timing Role: Frame buffer memory with zero-write-latency capture; accepts raw sensor data at 120MB/s without pipeline stalls. Use Value: Captures complete diagnostic frames even during sudden AC dropout, avoiding clinical data gaps and repeat scans. |
| Smart Energy Meter | Industrial Ethernet Switch |
Use Scenario: Tamper-proof energy consumption logging with hourly billing records and firmware update rollback protection. IC Role / Device Role / Timing Role: Secure event log storage with cryptographic timestamping; retains 10+ years of metering history without refresh. Use Value: Meets ANSI C12.22 compliance for secure, non-volatile data retention; withstands 85°C ambient in outdoor meter cabinets. |
Use Scenario: Configuration and statistics storage in DIN-rail mounted switches deployed in manufacturing cells with frequent firmware updates. IC Role / Device Role / Timing Role: Boot configuration memory and real-time stats buffer; survives 100% duty-cycle writes during diagnostics and monitoring. Use Value: Enables field-upgradable firmware with atomic write commit, preventing config corruption during brownouts or hot swaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit x16, 45ns access, 3.3V, −40°C to +85°C, 44-pin TSOP - slower timing, narrower temp range, same density and interface | Limited to industrial (not industrial-plus) ambient; unsuitable for 105°C environments like motor control cabinets | Select when cost sensitivity outweighs extended temperature requirement and 45ns latency is acceptable |
| Cypress Semiconductors FM22L16 | 4Mbit x16, 35ns access, 3.3V, −40°C to +85°C, 48-ball FBGA - identical speed but lower max operating temperature and different package | Requires PCB redesign for FBGA; lacks 105°C qualification for high-heat industrial deployments | Choose only if FBGA footprint is already committed and thermal margin exceeds 20°C above ambient |
Compared with M3004316035NX0PTBR, MR2A16A trades 10°C thermal headroom and 10ns latency for broader distributor availability, while FM22L16 preserves timing but constrains thermal design and forces layout change - making M3004316035NX0PTBR the sole option meeting 105°C + 35ns + TSOP requirements simultaneously.
Availability
M3004316035NX0PTBR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging buffers, and smart energy meters requiring stable component supply across extended temperature and high-endurance non-volatile memory.
Supply support for M3004316035NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically for industrial edge applications demanding SRAM-compatible speed with Flash-level non-volatility - bridging the gap between volatile performance and permanent data retention.
FAQ
What is the maximum operating temperature for M3004316035NX0PTBR?
M3004316035NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated across the full 2.7–3.6V supply range and confirmed in Table 16 (Data Retention) and Table 7 (DC Characteristics) of the Renesas datasheet. Operation beyond 105°C risks violating absolute maximum ratings and invalidating data retention guarantees.
Does M3004316035NX0PTBR require a backup battery or capacitor for data retention?
No, M3004316035NX0PTBR does not require any external backup power source. As a magneto-resistive RAM, it retains data indefinitely without power - confirmed by 10-year retention at 105°C in Table 16. This eliminates battery leakage, maintenance, and cold-temperature failure modes inherent in battery-backed SRAM solutions.
Can M3004316035NX0PTBR be used as a direct replacement for standard SRAM in existing designs?
Yes, M3004316035NX0PTBR is pin- and timing-compatible with industry-standard 4Mbit x16 asynchronous SRAMs. Its 35ns read/write cycle, identical E#/G#/W# control protocol, and 3.3V voltage levels allow drop-in replacement - provided the host system does not rely on SRAM's volatility and accommodates slightly higher write current (20mA typical).
What package type is used for M3004316035NX0PTBR?
M3004316035NX0PTBR uses a 54-pin TSOP package (10mm × 22mm), as specified in the ordering code "TB" and confirmed on Page 9 of the Renesas datasheet. This package supports densities from 4Mb to 16Mb and is compatible with standard SRAM reflow profiles and pick-and-place equipment.
How many write cycles can M3004316035NX0PTBR endure before failure?
M3004316035NX0PTBR guarantees ≥10¹⁴ write cycles (100 trillion), as stated in Table 16 (Endurance and Data Retention). This endurance level enables continuous operation - for example, writing once per millisecond results in functional longevity exceeding 3,170 years - far exceeding typical product lifecycles in industrial applications.
M3004316035NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316035NX0PTBR FAQ
1.How can I place an order for M3004316035NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0PTBR reliable?
The price and inventory of M3004316035NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3004316035NX0PTBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0PTBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0PTBR?
M3004316035NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0PTBR?
For technical support, including M3004316035NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0PTBR requirements.
6.How does Aetrix verify that M3004316035NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3004316035NX0PTBR?
All M3004316035NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0PTBR part is unused and in its original packaging.
Return procedure for M3004316035NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0PTBR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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