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Renesas M3004316035NX0PTBY
- Part No.:
- M3004316035NX0PTBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316035NX0PTBY.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,801
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Product details
Overview
M3004316035NX0PTBY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316035NX0PTBY datasheet, M3004316035NX0PTBY pinout, M3004316035NX0PTBY application, or M3004316035NX0PTBY equivalent, this page provides verified timing parameters, TSOP-54 pin mapping, endurance (10¹⁴ cycles), data retention (10 years at 105°C), and validated alternatives for industrial embedded memory replacement.
Technical Context
The M3004316035NX0PTBY implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and supports byte-selectable write operations.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms. Write inhibit voltage (Vwi) is 2.1–2.5V, ensuring data integrity during brownout conditions below 2.1V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 35ns read/write - enables direct SRAM drop-in replacement in legacy 35ns bus systems |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails and tolerant of ±10% variation |
| Operating Temp | −40°C to +105°C - qualified for extended-temperature industrial control and medical diagnostics |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead required in Flash/NAND |
| Data Retention | 10 years at 105°C - guarantees non-volatility without backup batteries or capacitors |
| Interface | Parallel asynchronous x16 - no clock, no command protocol; uses standard E#/G#/W# control timing |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 3.5mA) when high |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; sets Hi-Z state when high during read |
| W# | Write Enable | Active-low write strobe; low = write mode, high = read mode |
| UB# | Upper Byte Enable | Active-low selection of DQ[15:8]; enables partial-word writes |
| LB# | Lower Byte Enable | Active-low selection of DQ[7:0]; enables partial-word writes |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density (262,144 words); no A18–A20 used |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus; supports simultaneous upper/lower byte access or full-word transfer |
| VCC / VSS | Power / Ground | Single 3.3V supply; decoupling required per JEDEC guidelines for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates external battery/capacitor backup while retaining SRAM-like random access and timing |
| 40nm pMTJ STT-MRAM technology | Enables 35ns cycle time with zero write latency penalty and no erase-before-write requirement |
| 10¹⁴ write endurance | Supports continuous real-time logging (e.g., PLC event buffers) over 20+ years at 100k writes/hour |
| 10-year data retention at 105°C | Validated for sealed, fanless industrial enclosures where ambient exceeds 85°C |
| Industrial-plus temperature grade | Qualified across −40°C to +105°C with full AC/DC specs guaranteed - no derating needed |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging Buffer |
|---|---|
Use Scenario: Real-time motion control loop with deterministic 35ns memory access for servo position history and fault log storage. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last 10,000 encoder samples; retains data across unexpected power loss. Use Value: Eliminates battery-backed SRAM maintenance and avoids Flash wear-out in cyclic logging applications. | Use Scenario: Ultrasound machine frame buffer storing raw sensor data before DSP processing and archiving. IC Role / Device Role / Timing Role: High-speed, low-latency write buffer accepting burst data from ADCs at >20MB/s sustained rate. Use Value: Enables immediate power-loss recovery without image corruption or reacquisition delay. |
| Smart Energy Meter Firmware Log | Industrial Ethernet Switch Configuration Store |
Use Scenario: Tamper-proof energy usage logging with timestamped events written every second under mains power interruption. IC Role / Device Role / Timing Role: Persistent configuration and event log memory; withstands 10¹⁴ writes over 20-year meter lifetime. Use Value: Meets IEC 62056-21 requirements for non-volatile meter data integrity without EEPROM endurance management. | Use Scenario: Storing switch MAC tables, VLAN settings, and firmware update staging in DIN-rail mounted managed switches. IC Role / Device Role / Timing Role: Fast-access configuration store enabling sub-100ms reboot with full state restoration. Use Value: Reduces boot time vs. SPI Flash by eliminating serial command overhead and erase delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-BA45XI | 4Mbit nvSRAM, 45ns access, 3.3V, 44-pin TSOP; requires external capacitor for STORE/RECALL | Limited to industrial temp (−40°C to +85°C); no 105°C rating | Select when capacitor-based STORE/RECALL is acceptable and 45ns timing suffices |
| Infineon SEED4M16X35 | 4Mbit STT-MRAM, 35ns, 3.3V, 48-ball FBGA; same endurance/retention but different pinout | Requires PCB redesign due to FBGA vs. TSOP; no UB#/LB# byte-enable support | Select only if migrating to FBGA footprint and can adapt byte-enable logic |
Compared with CY14B104N-BA45XI, M3004316035NX0PTBY offers superior temperature range and eliminates external capacitor dependency; compared with SEED4M16X35, it provides pin-compatible TSOP-54 packaging and native x16 byte-enable control for seamless integration into existing SRAM-based designs.
Availability
M3004316035NX0PTBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for M3004316035NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems demanding infinite endurance, fast non-volatility, and extended-temperature reliability.
FAQ
What is the maximum operating temperature for M3004316035NX0PTBY?
The M3004316035NX0PTBY is rated for industrial-plus operation from −40°C to +105°C. All electrical specifications-including 35ns read/write timing, 10¹⁴ endurance, and 10-year data retention-are guaranteed across this full range. This makes M3004316035NX0PTBY suitable for sealed, convection-cooled enclosures in harsh environments like motor control cabinets or outdoor utility meters.
Does M3004316035NX0PTBY require an external capacitor or battery for data retention?
No, M3004316035NX0PTBY does not require any external capacitor, battery, or auxiliary power source for data retention. As a true MRAM device based on spin-transfer torque (STT) technology, it retains data inherently and indefinitely at power-off. The 10-year retention at 105°C is achieved without supplemental circuitry-unlike nvSRAMs such as Cypress CY14B104N that depend on external capacitors for STORE/RECALL functionality.
What package type is used for M3004316035NX0PTBY?
M3004316035NX0PTBY uses a 54-pin TSOP (Thin Small Outline Package) measuring 10mm × 22mm. This package is compatible with standard SRAM footprints and supports densities up to 16Mbit. Pin compatibility with legacy parallel SRAMs simplifies drop-in replacement in existing industrial control and networking hardware designs.
How does the write endurance of M3004316035NX0PTBY compare to Flash or EEPROM?
M3004316035NX0PTBY offers 10¹⁴ write cycles-100 million times greater than typical NOR Flash (10⁵ cycles) and 10,000 times greater than industrial EEPROM (10¹⁰ cycles). This eliminates wear-leveling algorithms, reduces firmware complexity, and ensures reliable operation in high-frequency logging applications such as PLC event buffers or real-time spectrum analyzers where writes occur continuously.
Can M3004316035NX0PTBY be used as a direct replacement for standard SRAM in existing designs?
Yes, M3004316035NX0PTBY is functionally and electrically compatible with 35ns parallel x16 SRAMs, including identical pinout (TSOP-54), voltage range (2.7–3.6V), and control signal timing (E#, G#, W#, UB#, LB#). No PCB changes are required. Unlike SRAM, however, M3004316035NX0PTBY retains data without power-making it a true persistent SRAM (P-SRAM) upgrade with zero design risk.
M3004316035NX0PTBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316035NX0PTBY FAQ
1.How can I place an order for M3004316035NX0PTBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316035NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316035NX0PTBY reliable?
The price and inventory of M3004316035NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316035NX0PTBY is usually 5 days.
3.What payment methods are accepted for M3004316035NX0PTBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316035NX0PTBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316035NX0PTBY?
M3004316035NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316035NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316035NX0PTBY?
For technical support, including M3004316035NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316035NX0PTBY requirements.
6.How does Aetrix verify that M3004316035NX0PTBY is sourced from the original manufacturer or authorized distributors?
All M3004316035NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316035NX0PTBY meets industry standards.
7.What is the process for return or replacement of M3004316035NX0PTBY?
All M3004316035NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316035NX0PTBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316035NX0PTBY part is unused and in its original packaging.
Return procedure for M3004316035NX0PTBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316035NX0PTBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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