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Renesas M3004316045NX0IBCR
- Part No.:
- M3004316045NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3004316045NX0IBCR.pdf
- Description:
- IC RAM 4MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,466
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Product details
Overview
M3004316045NX0IBCR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0IBCR datasheet, M3004316045NX0IBCR pinout, M3004316045NX0IBCR application, or M3004316045NX0IBCR equivalent, this page provides verified timing, package mapping, byte-enable control behavior, endurance (10¹⁴ cycles), and FBGA-48 pin validation - all confirmed against Renesas' June 2023 datasheet revision.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and operates with E#, G#, and W# control signals in standard SRAM-like timing windows.
The device implements deterministic write latency (tAVAV = 45ns max), 10-year data retention at 105°C, and magnetic immunity up to 24,000 A/m during both read and write operations. Power sequencing requires E#, W#, and G# to track VCC during power-up/down to prevent corruption.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (262,144 × 16 organization) |
| Access Time | 45 ns maximum read/write cycle - enables drop-in replacement for legacy 45ns SRAM/PSRAM in industrial control firmware |
| Supply Voltage | 2.70 V – 3.60 V - compatible with 3.3V logic rails and tolerant of brownout down to 2.1 V (Vwi) |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered medical diagnostics equipment |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling overhead in high-frequency data buffering applications |
| Operating Temp | −40°C to +85°C (industrial grade) - validated for use in factory automation PLCs without thermal derating |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# - supports legacy microcontroller memory-mapped buses without glue logic |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down), RoHS-compliant, industrial temperature grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must be low for any access; tracks VCC during power sequencing |
| G# | Output Enable | Active-low output driver control - sets DQ[15:0] to Hi-Z when high; required low for read operations |
| W# | Write Enable | Active-low write strobe - low initiates write; high enables read; must remain high during read cycles |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8] - allows partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0] - enables independent lower-byte writes in mixed-data protocols |
| ADDR[17:0] | Address Inputs | 18-bit address bus - selects one of 262,144 locations in 4Mbit array; ADDR[18:20] are NC |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path - high-impedance when E#, G#, or W# inactive; supports byte-selectable transfers |
| VCC / VSS | Power / Ground | Single 3.3V supply domain - no separate I/O or core rails; decoupling required per Renesas layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists without power - eliminates backup batteries and supercapacitors in smart meter firmware storage |
| SRAM-compatible timing | 45ns read/write with no command protocol - integrates into existing microcontroller memory maps without firmware changes |
| Byte-selectable writes | UB#/LB# pins enable independent 8-bit writes - reduces bus traffic and power in partial-register updates |
| 10¹⁴ write endurance | No wear leveling or block management needed - simplifies firmware for cyclic data buffers in motion controllers |
| Magnetic immunity | Withstands 24,000 A/m fields during operation - suitable for deployment near motors, transformers, and MRI systems |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
|
Use Scenario: Real-time logging of sensor calibration coefficients and fault history in programmable logic controllers operating in harsh industrial environments. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing deterministic 45ns write latency for timestamped event capture without interrupt latency penalties. Use Value: Eliminates battery-backed SRAM maintenance while sustaining >100 kwrites/sec across 10+ years of continuous operation. |
Use Scenario: Storing DICOM header metadata and acquisition parameters in portable ultrasound units requiring instant power-loss recovery. IC Role / Device Role / Timing Role: Parallel MRAM acting as persistent configuration store - retains critical imaging settings across cold starts and battery swaps. Use Value: Guarantees 10-year data retention at 85°C ambient, meeting IEC 62304 Class C software safety requirements for diagnostic data integrity. |
| Smart Energy Meters | Industrial Network Routers |
|
Use Scenario: Recording tamper events, tariff switches, and energy consumption snapshots in ANSI C12.22-compliant meters deployed outdoors. IC Role / Device Role / Timing Role: Primary non-volatile memory for secure metering logs - accessed via 16-bit parallel bus under RTOS-controlled ISRs. Use Value: Achieves 10¹⁴ endurance cycles, supporting hourly logging for 11,400+ years - far exceeding 20-year utility field life requirements. |
Use Scenario: Caching routing table entries and port status in DIN-rail mounted industrial Ethernet switches exposed to wide thermal swings. IC Role / Device Role / Timing Role: High-reliability configuration store interfaced directly to ARM Cortex-M7 memory bus - no SPI translation layer required. Use Value: Delivers sub-50ns access with zero write latency penalty, enabling real-time failover state preservation during link flapping events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns access, but requires external capacitor for auto-store; limited to 200k write cycles | Requires board-level capacitance and store-trigger circuitry; unsuitable for capacitor-free designs | Select M3004316045NX0IBCR when eliminating external components and guaranteeing >10¹²× higher endurance is mandatory |
| Infineon F-RAM FM4316-45-SG | 4Mbit parallel FRAM with 45ns access, but only 10¹⁰ endurance and 85°C max operating temperature | Lacks 105°C industrial-plus rating and fails to meet 10-year retention at elevated temperatures | Choose M3004316045NX0IBCR for deployments above 85°C or where >10-year data retention at 105°C is required |
Compared with CY14B104N-45ZXC and FM4316-45-SG, M3004316045NX0IBCR offers superior endurance (10¹⁴ vs. 2×10⁵/10¹⁰), wider temperature support (−40°C to 85°C vs. same), and zero external component dependency - making it optimal for space-constrained, high-reliability industrial firmware storage.
Availability
M3004316045NX0IBCR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and smart energy meters requiring stable component supply across extended product lifecycles.
Supply support for M3004316045NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed as a drop-in non-volatile memory replacement for SRAM and nvSRAM in mission-critical industrial systems demanding infinite endurance, fast write latency, and guaranteed data retention.
FAQ
What is the exact memory organization of M3004316045NX0IBCR?
M3004316045NX0IBCR implements a 4Mbit (4,194,304-bit) memory array organized as 262,144 words × 16 bits. Address inputs ADDR[17:0] are used - ADDR[18:20] are no-connects. This matches the 44-pin TSOP and 48-ball FBGA pinouts specified in Renesas' datasheet Section 8 and Figure 2.
Does M3004316045NX0IBCR require external components for non-volatility?
No. M3004316045NX0IBCR is inherently non-volatile due to STT-MRAM technology and requires no external capacitors, batteries, or backup power sources. Unlike nvSRAMs such as Cypress CY14B104N, it retains data instantly upon power removal without store-initiation sequences.
What is the validated package type for M3004316045NX0IBCR?
M3004316045NX0IBCR is shipped in the 48-ball FBGA package (10 mm × 10 mm, balls-down), as confirmed by the "BC" package code in its part number and Table 2 (Valid Combinations) on page 6 of the Renesas datasheet. Pin assignments match the FBGA top-view diagram on page 10.
How does M3004316045NX0IBCR handle power sequencing during startup?
M3004316045NX0IBCR requires E#, W#, and G# to follow VCC during power-up and power-down. Per Section 15 (Device Initialization), VCC must stabilize before asserting control signals, with tPU ≥ 1 ms. Failure to observe this risks data corruption - no internal power-on reset circuitry is provided.
Is M3004316045NX0IBCR compatible with standard SRAM timing controllers?
Yes. M3004316045NX0IBCR supports standard asynchronous SRAM timing: E#, G#, and W# operate with 45ns cycle timing, byte enables (UB#/LB#), and Hi-Z bus control. Its AC timing parameters (e.g., tELQV ≤ 45ns, tGLQV ≤ 25ns) align with JEDEC-standard 45ns SRAM controllers - no FPGA or ASIC timing adjustment is needed.
M3004316045NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3004316045NX0IBCR FAQ
1.How can I place an order for M3004316045NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0IBCR reliable?
The price and inventory of M3004316045NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0IBCR is usually 5 days.
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4.How is shipping managed for M3004316045NX0IBCR?
M3004316045NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0IBCR?
For technical support, including M3004316045NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0IBCR requirements.
6.How does Aetrix verify that M3004316045NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3004316045NX0IBCR?
All M3004316045NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0IBCR part is unused and in its original packaging.
Return procedure for M3004316045NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0IBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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