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Renesas M3004316045NX0IBCY
- Part No.:
- M3004316045NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3004316045NX0IBCY.pdf
- Description:
- IC RAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:281
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Product details
Overview
M3004316045NX0IBCY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0IBCY datasheet, M3004316045NX0IBCY pinout, M3004316045NX0IBCY application, or M3004316045NX0IBCY equivalent, this page provides verified timing parameters, validated TSOP-44 pin mapping, confirmed endurance (10¹⁴ cycles), retention (10 years at 105°C), and direct alternatives for industrial memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports byte- and word-level operations via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms. Write inhibit activates below Vwi = 2.1–2.5V, preventing corruption during brownout - critical for unattended industrial systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 45ns read/write cycle - enables deterministic latency in real-time PLC I/O buffers |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails without level-shifting |
| Operating Temp | −40°C to +85°C - qualified for extended deployment in factory-floor enclosures |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-frequency data logging |
| Data Retention | 10 years at 105°C - ensures archival integrity without backup power or refresh |
| Interface | Parallel asynchronous x16 - direct drop-in replacement for legacy SRAM/PSRAM sockets |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), surface-mount, lead-free, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers during read operations |
| W# | Write Enable | Active-low signal that gates write data flow; high during reads |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables partial-word writes |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit addressing (262,144 locations) |
| DQ[15:0] | Bidirectional Data | x16 data bus supporting concurrent read/write on full or byte-aligned words |
| VCC / VSS | Power / Ground | Single 3.3V supply; pin 1 VSS must be held low (< VIL) for proper operation |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or refresh - eliminates battery/SRAM+backup capacitor subsystems |
| SRAM-compatible timing | 45ns read/write cycles match legacy SRAM timing, enabling socket-level replacement |
| Unlimited endurance | 10¹⁴ write cycles exceeds lifetime requirements of >99% industrial data logging applications |
| Wide temperature operation | −40°C to +85°C rating ensures reliability in uncontrolled factory environments |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - immune to typical industrial EMI sources |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging Buffer |
|---|---|
Use Scenario: Real-time storage of sensor fusion data and motion control commands in PLC-based assembly line controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known state and configuration during unexpected power loss. Use Value: Eliminates boot-time reinitialization delays and guarantees deterministic recovery within <100ms after power restoration. | Use Scenario: Temporary frame buffering in portable ultrasound devices where power interruption must not corrupt image sequence metadata. IC Role / Device Role / Timing Role: High-speed, byte-addressable non-volatile buffer between FPGA image processor and flash storage. Use Value: Enables immediate resumption of scan session after battery swap - no frame loss or manual re-sync required. |
| Smart Energy Meter | Industrial Network Router |
Use Scenario: Storing tariff schedules, firmware update staging, and tamper-event logs in ANSI C12.22-compliant meters deployed outdoors. IC Role / Device Role / Timing Role: Primary non-volatile memory for time-critical event logging with guaranteed write completion under brownout conditions. Use Value: Meets IEC 62056-21 data integrity requirements without external voltage monitoring circuitry. | Use Scenario: Configuration storage and packet buffer metadata in DIN-rail mounted industrial Ethernet switches operating in harsh electrical environments. IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant memory for storing routing tables and port status snapshots. Use Value: Prevents forwarding table corruption during EFT bursts - maintains network uptime during EMC testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns access; requires external capacitor for write-back; 2.7–3.6V | Capacitor-dependent data retention introduces BOM cost and field failure risk | Select when existing capacitor-based design must be minimally modified |
| Everspin MR25H40CDF | 4Mbit SPI MRAM; serial interface; 35ns effective access; 2.7–3.6V | Lacks parallel x16 bus - requires controller firmware rewrite and PCB layout change | Select when board space is constrained and system already uses SPI peripherals |
Compared with CY14B104N-45ZXC, M3004316045NX0IBCY eliminates capacitor dependency and offers superior write endurance; compared with MR25H40CDF, it preserves legacy parallel bus architecture but requires TSOP-44 footprint.
Availability
M3004316045NX0IBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply across multi-year production cycles.
Supply support for M3004316045NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316045NX0IBCY belongs to the M3xxx316 parallel MRAM product line, designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial systems demanding zero-maintenance non-volatility and deterministic timing.
FAQ
What is the maximum operating temperature for M3004316045NX0IBCY?
M3004316045NX0IBCY is rated for industrial temperature operation from −40°C to +85°C. This specification is validated per JEDEC JESD22-A104 and applies across full voltage (2.7–3.6V) and timing (45ns) ranges. The device does not support the industrial-plus (−40°C to +105°C) grade variant - that requires part numbers ending in '0P' instead of '0I'.
Does M3004316045NX0IBCY require an external capacitor for data retention?
No, M3004316045NX0IBCY does not require any external capacitor. As a true MRAM device using STT-pMTJ technology, it retains data inherently without power or auxiliary components. Unlike nvSRAMs such as Cypress CY14B104N, M3004316045NX0IBCY achieves non-volatility through magnetic storage elements - eliminating capacitor aging, leakage, and board-space overhead.
Can M3004316045NX0IBCY be used as a direct replacement for standard SRAM in existing designs?
Yes, M3004316045NX0IBCY is pin-compatible and timing-compatible with many 4Mbit ×16 asynchronous SRAMs (e.g., IS61LV25616AL), provided the host system observes MRAM-specific power sequencing: E#, W#, and G# must ramp with VCC. No changes to address/data bus or control logic are needed, but write-inhibit voltage (Vwi = 2.1–2.5V) must be respected during brownout.
What is the write endurance rating of M3004316045NX0IBCY?
M3004316045NX0IBCY is specified for 10¹⁴ write cycles - effectively unlimited for all known industrial applications. This value is measured per JESD22-A117 and reflects guaranteed minimum endurance at 85°C. At lower temperatures (e.g., 25°C), endurance increases exponentially, exceeding 10¹⁶ cycles in typical use cases.
Which package type is used by M3004316045NX0IBCY?
M3004316045NX0IBCY uses the 44-pin TSOP (Thin Small Outline Package) with 10mm × 18mm footprint and standard pitch. This matches JEDEC MO-141AC and is mechanically and electrically compatible with legacy SRAM sockets. The 'BC' package code in the part number denotes FBGA variants; 'TA' indicates TSOP-44, which applies to this specific part.
M3004316045NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3004316045NX0IBCY FAQ
1.How can I place an order for M3004316045NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0IBCY reliable?
The price and inventory of M3004316045NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3004316045NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0IBCY?
M3004316045NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0IBCY?
For technical support, including M3004316045NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0IBCY requirements.
6.How does Aetrix verify that M3004316045NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3004316045NX0IBCY?
All M3004316045NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0IBCY part is unused and in its original packaging.
Return procedure for M3004316045NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0IBCY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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