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Renesas M3004316045NX0ITAR
- Part No.:
- M3004316045NX0ITAR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0ITAR.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:2,883
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Product details
Overview
M3004316045NX0ITAR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0ITAR datasheet, M3004316045NX0ITAR pinout, M3004316045NX0ITAR application, or M3004316045NX0ITAR equivalent, this page provides verified timing parameters, TSOP-44 package mapping, byte-enable control behavior, endurance (10¹⁴ cycles), and thermal resistance (θJA = 40.05°C/W) - all confirmed from Renesas' official June 2023 datasheet.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with no write latency penalty or erase-before-write requirement. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and dual write control modes (W#- or E#-triggered).
The device implements a full SRAM-compatible command set: chip enable (E#), output enable (G#), and write enable (W#) signals govern all operations, while ADDR[17:0] (18-bit address bus) and DQ[15:0] (16-bit bidirectional data bus) define its 262,144 × 16 memory array organization. Power-up initialization requires synchronized assertion of E#/W#/G# after VCC reaches ≥2.7V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Mbit (262,144 × 16 organization) - fits compact embedded systems requiring persistent storage without block management overhead. |
| Access Timing | 45ns read/write cycle time - enables drop-in replacement for legacy 45ns SRAMs while retaining non-volatility. |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for use in PLCs, motor drives, and edge sensor nodes without derating. |
| Endurance & Retention | 10¹⁴ write cycles / 10 years at 105°C - eliminates wear-leveling firmware and guarantees data integrity over product lifetime. |
| Interface Type | Parallel asynchronous x16 - supports direct connection to microcontroller external memory buses (e.g., ARM Cortex-M7 FSMC, RISC-V AXI-lite wrappers). |
| Package | 44-pin TSOP (10mm × 18mm) - footprint-compatible with industry-standard 44-pin SOJ/SOP packages, easing PCB layout reuse. |
Pinout & Package
44-pin TSOP (10mm × 18mm) package with standard JEDEC-compliant pinout. Pin assignments follow Renesas' documented top-view layout for 4Mb density devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must be low for any read/write operation - used for memory bank selection in multi-device systems. |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers - enables high-impedance state during writes or bus sharing. |
| W# | Write Enable | Active-low signal that determines data direction on DQ bus - low = write, high = read (with G# low). |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes - allows partial-word writes without read-modify-write. |
| ADDR[17:0] | Address Inputs | 18-bit address bus supporting 262,144 locations - matches standard 4M×16 SRAM addressing for seamless migration. |
| DQ[15:0] | Bidirectional Data | 16-bit I/O bus with configurable byte granularity - eliminates need for external data multiplexers in byte-aligned protocols. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | Zero write latency, no erase cycles, and identical timing to 45ns SRAM - enables firmware-transparent replacement in existing designs. |
| pMTJ STT-MRAM technology | 40nm node with 24,000 A/m magnetic immunity - ensures reliable operation near motors, solenoids, and switching power supplies. |
| Industrial temperature support | Guaranteed operation from –40°C to +85°C with full AC/DC specs - validated across temperature for deterministic timing in harsh environments. |
| Low-power standby | 1.5–2.5mA typical ISB (4Mb–16Mb) - reduces system idle power vs. battery-backed SRAM or EEPROM-based alternatives. |
| RoHS/REACH compliance | Lead-free TSOP package with halogen-free molding compound - meets IPC-J-STD-609A and EU regulatory requirements for industrial equipment. |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs during servo axis operation. IC Role / Device Role / Timing Role: Non-volatile frame buffer and configuration register backup - retains critical state across unexpected power loss. Use Value: Eliminates supercapacitor backup circuitry and guarantees log integrity without software intervention. |
Use Scenario: Portable ultrasound device capturing and buffering raw RF scan data before DSP processing. IC Role / Device Role / Timing Role: High-speed acquisition memory interfacing directly to ADC FIFO controller - sustains 45ns burst writes without pipeline stalls. Use Value: Reduces BOM cost and board area versus DDR2+EEPROM combinations while meeting IEC 62304 data retention mandates. |
| Smart Meter | Industrial Control And Monitoring |
Use Scenario: Electricity meter recording tamper events, voltage sags, and consumption intervals over 10+ year service life. IC Role / Device Role / Timing Role: Secure event log storage with cryptographic timestamping - withstands 10¹⁴ write cycles and 10-year data retention at 85°C. Use Value: Removes need for wear-leveling algorithms and extends field upgrade cycles beyond utility deployment windows. |
Use Scenario: Distributed I/O module caching sensor fusion outputs and alarm thresholds for redundant PLC communication. IC Role / Device Role / Timing Role: Dual-port accessible memory shared between ARM Cortex-A53 application core and real-time RTOS co-processor. Use Value: Enables deterministic inter-processor messaging with sub-50ns read/write turnaround - no arbitration delays or cache coherency overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns timing, but requires external capacitor for auto-store; limited to 1M write cycles. | Suitable for infrequent configuration storage, not high-frequency logging. | Select only if capacitor-based backup is acceptable and endurance >10⁶ cycles is unnecessary. |
| Infineon F-RAM FM24V04-G | 4Mbit parallel FRAM with 45ns timing, unlimited endurance, but 2.7–3.6V range and higher standby current (3.5mA typ). | Better for ultra-low-power sleep modes, less optimal for sustained burst writes due to lower write current headroom. | Prefer when system-level power budget prioritizes deep-sleep current over active write efficiency. |
Compared with CY14B104N-45ZXC and FM24V04-G, M3004316045NX0ITAR offers superior endurance (10¹⁴ vs. 10⁶/∞ cycles), lower active write current (20mA vs. 25mA/30mA), and no external component dependencies - making it optimal for high-reliability, high-throughput industrial logging where deterministic timing and zero maintenance are mandatory.
Availability
M3004316045NX0ITAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for M3004316045NX0ITAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316045NX0ITAR belongs to Renesas' Parallel MRAM product line, designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems demanding infinite endurance, fast non-volatile writes, and extended temperature reliability.
FAQ
What is the memory organization and density of M3004316045NX0ITAR?
M3004316045NX0ITAR is a 4Mbit parallel MRAM organized as 262,144 words × 16 bits. This 18-bit address bus (ADDR[17:0]) and 16-bit data bus (DQ[15:0]) configuration matches standard 4M×16 SRAM footprints, enabling direct hardware substitution without address decoding changes. The device uses pMTJ STT-MRAM technology to deliver non-volatile storage with SRAM-like random access.
Does M3004316045NX0ITAR require a backup power source or capacitor?
No, M3004316045NX0ITAR does not require any external backup power source, capacitor, or battery. Its intrinsic non-volatility stems from magnetic storage physics - data persists automatically upon power removal. Unlike nvSRAMs such as Cypress CY14B104N, there is no auto-store sequence or external energy storage dependency, simplifying design and improving long-term reliability.
What are the valid operating voltage and temperature ranges for M3004316045NX0ITAR?
M3004316045NX0ITAR operates across a supply voltage range of 2.7V to 3.6V and an industrial temperature range of –40°C to +85°C. Its write-inhibit threshold (Vwi) is specified from 2.1V to 2.5V, ensuring deterministic behavior during brownout conditions. All AC and DC electrical specifications - including 45ns timing - are guaranteed across this full range per Renesas' June 2023 datasheet.
How does the byte-enable functionality (UB# and LB#) work on M3004316045NX0ITAR?
UB# (Upper Byte Enable) and LB# (Lower Byte Enable) are independent active-low signals controlling DQ[15:8] and DQ[7:0], respectively. When both are low, a full 16-bit word is accessed; asserting only one enables partial-byte writes without read-modify-write sequences. This feature reduces bus traffic and improves efficiency in systems handling 8-bit peripheral registers or mixed-width data structures.
What is the endurance and data retention specification for M3004316045NX0ITAR?
M3004316045NX0ITAR guarantees 10¹⁴ write cycles and 10 years of data retention at 105°C, 1,000 years at 85°C, and up to 1 million years at 65°C. These values are measured and specified in Renesas' official datasheet Table 16. The endurance far exceeds flash (10⁵) and nvSRAM (10⁶), eliminating wear-leveling firmware and enabling continuous logging in high-frequency industrial applications.
M3004316045NX0ITAR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316045NX0ITAR FAQ
1.How can I place an order for M3004316045NX0ITAR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0ITAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0ITAR reliable?
The price and inventory of M3004316045NX0ITAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0ITAR is usually 5 days.
3.What payment methods are accepted for M3004316045NX0ITAR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0ITAR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0ITAR?
M3004316045NX0ITAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0ITAR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0ITAR?
For technical support, including M3004316045NX0ITAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0ITAR requirements.
6.How does Aetrix verify that M3004316045NX0ITAR is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0ITAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0ITAR meets industry standards.
7.What is the process for return or replacement of M3004316045NX0ITAR?
All M3004316045NX0ITAR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0ITAR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0ITAR part is unused and in its original packaging.
Return procedure for M3004316045NX0ITAR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0ITAR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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