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Renesas M3004316045NX0ITAY
- Part No.:
- M3004316045NX0ITAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0ITAY.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:1,766
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Product details
Overview
M3004316045NX0ITAY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatile data retention, used in real-time industrial control and medical diagnostics where power loss resilience and low-latency writes are critical.
For engineers reviewing the M3004316045NX0ITAY datasheet, M3004316045NX0ITAY pinout, M3004316045NX0ITAY application, or M3004316045NX0ITAY equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable operation, and validated alternatives for factory automation, smart metering, and embedded data logging systems.
Technical Context
This MRAM implements spin-transfer torque (STT) technology on a 40nm pMTJ process, enabling true random-access reads and writes without erase cycles. Its asynchronous parallel interface uses E#, G#, W#, UB#, and LB# control signals to manage chip enable, output enable, write enable, and byte-select functionality across a 18-pin address bus (ADDR[17:0]) and 16-bit bidirectional data bus (DQ[15:0]).
The device operates in two primary modes: read mode (E# and G# low, W# high) outputs data on DQ[15:0], and write mode (E# and W# low, G# high) latches data into the addressed location. Power-up requires E#, W#, and G# to track VCC, with tPU ≥ 1ms before first instruction execution.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Mbit (262,144 × 16 organization), enabling compact firmware storage or real-time parameter logging in space-constrained designs. |
| Access Timing | 45ns read/write cycle time - supports legacy SRAM-based microcontroller interfaces without timing redesign. |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Data Retention | 10 years at 105°C - ensures long-term reliability in sealed industrial enclosures without backup power. |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead in high-frequency logging applications. |
| Operating Temp | −40°C to +85°C (industrial grade) - qualified for deployment in factory-floor PLCs and outdoor smart meters. |
| Interface Type | Parallel asynchronous x16 - direct drop-in replacement for legacy PSRAM or fast NOR flash in existing PCB layouts. |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), surface-mount, lead-free, RoHS/REACH compliant. Pin 1 is VSS and must be held low (< VIL) for proper operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 2.5mA) when high, enabling low-power sleep states. |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; sets bus to Hi-Z when high, allowing shared data bus arbitration. |
| W# | Write Enable | Active-low signal that determines direction: low = write, high = read; decouples address/data timing from control logic. |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) bytes - enables partial-word writes without read-modify-write. |
| ADDR[17:0] | Address Inputs | 18-bit address bus supporting full 4Mbit addressing; no internal address latching - simplifies timing-critical FPGA/CPLD interfacing. |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path with 10pF max input capacitance - minimizes signal integrity risk on 4-layer PCB traces up to 50mm. |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible 45ns read/write timing with inherent non-volatility - eliminates external backup battery or capacitor circuitry. |
| Unlimited endurance | 10¹⁴ write cycles - supports continuous data logging (e.g., 100 writes/sec for >30 years) without degradation or wear leveling. |
| Industrial temperature support | −40°C to +85°C operation with guaranteed 45ns timing - validated for use in uncooled industrial drives and medical imaging subsystems. |
| Low-power standby | 1.5–2.5mA ISB current - reduces system-level power budget in always-on edge nodes and remote sensors. |
| Magnetic immunity | 24,000 A/m field tolerance during read/write - immune to common industrial magnetic noise sources (motors, solenoids, transformers). |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs during servo axis operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known state and error codes across unexpected power loss. Use Value: Eliminates boot-time recalibration and enables deterministic restart within 100ms after power restoration. |
Use Scenario: Portable ultrasound device capturing frame buffers and calibration coefficients between imaging sessions. IC Role / Device Role / Timing Role: High-speed, radiation-tolerant memory for volatile image metadata with instant persistence on capture trigger. Use Value: Guarantees diagnostic traceability without DRAM refresh or NAND wear-out concerns in battery-powered units. |
| Smart Meter | Industrial Control & Monitoring |
Use Scenario: Electricity meter recording kWh consumption and tamper events every second under mains power interruption. IC Role / Device Role / Timing Role: Primary event-logging memory with atomic 45ns writes ensuring no data loss during zero-crossing brownouts. Use Value: Meets ANSI C12.1 and IEC 62056 compliance for revenue-grade data integrity without supercapacitor hold-up. |
Use Scenario: Programmable logic controller (PLC) retaining ladder logic variables and I/O status during firmware updates. IC Role / Device Role / Timing Role: Fast non-volatile shadow RAM for runtime configuration, enabling hot-swappable program changes. Use Value: Reduces machine downtime by 95% versus EEPROM-based configuration storage requiring 10ms+ erase cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns timing, but requires external VCAP and supports only 10¹² endurance cycles. | Needs external capacitor for power-loss protection; less suitable for capacitorless designs or ultra-high-cycle logging. | Select when legacy nvSRAM footprint compatibility is mandatory and VCAP integration is acceptable. |
| Infineon F-RAM FM24V04-G | 4Mbit parallel FRAM with 45ns access, 10¹⁴ endurance, but limited to 2.7–3.6V and −40°C to +85°C - identical voltage/temp range. | No magnetic immunity spec provided; not rated for high-field industrial environments. | Prefer for cost-sensitive, low-noise applications where magnetic immunity is not required and FRAM's soft-error immunity is valued. |
Compared with CY14B104N-45ZXC and FM24V04-G, M3004316045NX0ITAY uniquely combines magnetic immunity (24,000 A/m), capacitorless operation, and guaranteed 10-year data retention at 105°C - making it optimal for harsh-environment industrial MRAM migration.
Availability
M3004316045NX0ITAY is available at Aetrix Electronics and suitable for factory automation, smart metering, and medical diagnostics requiring stable component supply across extended product lifecycles and industrial temperature grades.
Supply support for M3004316045NX0ITAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316045NX0ITAY belongs to Renesas' Parallel MRAM product line, designed specifically to replace battery-backed SRAM and slow NOR flash in mission-critical industrial systems demanding instant-write non-volatility and extreme endurance.
FAQ
What is the memory organization and address bus width of M3004316045NX0ITAY?
M3004316045NX0ITAY has a 4Mbit density organized as 262,144 × 16, requiring an 18-bit address bus (ADDR[17:0]). This matches standard 3.3V microcontroller and FPGA parallel interfaces without address multiplexing or external decoding logic.
Does M3004316045NX0ITAY require an external capacitor or backup power source?
No, M3004316045NX0ITAY is capacitorless and does not require external VCAP or battery backup. Its STT-MRAM technology retains data instantly upon power removal, eliminating hold-up circuitry and associated BOM cost and reliability risks.
What is the maximum magnetic field strength M3004316045NX0ITAY can withstand during operation?
M3004316045NX0ITAY is rated for magnetic fields up to 24,000 A/m during both read and write operations - sufficient to operate reliably near industrial motors, solenoids, and transformers without data corruption or functional disruption.
How does the byte-enable functionality (UB#/LB#) work in M3004316045NX0ITAY?
In M3004316045NX0ITAY, UB# and LB# are independent active-low signals controlling DQ[15:8] and DQ[7:0], respectively. Asserting only one enables partial-word writes (e.g., LB# low + UB# high writes only DQ[7:0]), avoiding destructive read-modify-write sequences in mixed-data applications.
Is M3004316045NX0ITAY pin-compatible with standard 44-pin TSOP SRAMs?
M3004316045NX0ITAY uses a 44-pin TSOP package with identical mechanical footprint and pin pitch to JEDEC-standard 44-pin x16 SRAMs, but signal mapping differs (e.g., no CE#/OE#/WE# naming convention). Electrical interface is compatible, though timing and control logic must align with MRAM-specific E#/G#/W# protocol.
M3004316045NX0ITAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316045NX0ITAY FAQ
1.How can I place an order for M3004316045NX0ITAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0ITAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0ITAY reliable?
The price and inventory of M3004316045NX0ITAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0ITAY is usually 5 days.
3.What payment methods are accepted for M3004316045NX0ITAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0ITAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0ITAY?
M3004316045NX0ITAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0ITAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0ITAY?
For technical support, including M3004316045NX0ITAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0ITAY requirements.
6.How does Aetrix verify that M3004316045NX0ITAY is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0ITAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0ITAY meets industry standards.
7.What is the process for return or replacement of M3004316045NX0ITAY?
All M3004316045NX0ITAY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0ITAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0ITAY part is unused and in its original packaging.
Return procedure for M3004316045NX0ITAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0ITAY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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