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Renesas M3004316045NX0ITBR
- Part No.:
- M3004316045NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0ITBR.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,195
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Product details
Overview
M3004316045NX0ITBR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7V–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, used in real-time data logging and control state retention where power loss resilience is critical.
For engineers reviewing the M3004316045NX0ITBR datasheet, M3004316045NX0ITBR pinout, M3004316045NX0ITBR application, or M3004316045NX0ITBR equivalent, this page provides verified specifications, TSOP-54 pin mapping, endurance (10¹⁴ cycles), data retention (10 years at 105°C), and validated alternatives for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports byte- and word-level access via UB#/LB# controls and operates with E#, G#, W# handshake logic independent of clocks.
The device implements deterministic 45ns read/write timing with no write latency penalty, zero write endurance limit, and immunity to radiation-induced bit flips up to 24,000 A/m. Power sequencing requires E#, W#, and G# to track VCC during power-up/down to prevent initialization failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4 Mbit (262,144 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control signals |
| Read/Write Cycle Time | 45 ns minimum - enables deterministic low-latency access without wait states |
| Supply Voltage | 2.70 V – 3.60 V - compatible with standard 3.3 V industrial rails |
| Operating Temperature | −40°C to +85°C - qualified for industrial automation and factory control environments |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power or refresh |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-frequency logging applications |
| Package | 54-pin TSOP (10 mm × 22 mm) - drop-in replaceable for legacy SRAM/PSRAM footprints |
Pinout & Package
Package: 54-pin Thin Small Outline Package (TSOP), 10 mm × 22 mm body, surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; disables all internal operations and reduces standby current when high |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; sets bus to high-impedance when high |
| W# | Write Enable | Active-low signal that latches DQ[15:0] data into memory on falling edge when E# is low |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; allows partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables selective write to lower byte only |
| ADDR[17:0] | Address Inputs | 18-bit address bus supporting 262,144 locations for 4Mbit density; no address multiplexing |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; direction controlled by W# and G#; supports simultaneous read/write arbitration |
| VCC / VSS | Power / Ground | Single 3.3 V supply domain; both core and I/O share same rail; VSS pin 1 must be held < VIL |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible 45ns read/write timing with inherent non-volatility - eliminates external backup battery or capacitor |
| Unlimited write endurance | 10¹⁴ write cycles - supports continuous real-time data capture (e.g., sensor buffers, event logs) over product lifetime |
| Zero-refresh data retention | 10-year retention at 105°C - guarantees data survival through extended storage, shipping, or unpowered deployment |
| Industrial-grade magnetic immunity | Withstands 24,000 A/m fields during read/write - suitable for motor drives, power converters, and MRI-adjacent equipment |
| Asynchronous byte-select capability | Independent UB#/LB# control enables efficient 8-bit updates without full-word overhead - reduces bus traffic and power |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
|
Use Scenario: Real-time PLC program storage and I/O state snapshotting during mains failure. IC Role / Device Role / Timing Role: Non-volatile memory holding firmware and volatile runtime context with sub-50ns access. Use Value: Eliminates supercapacitor-based backup circuitry while maintaining deterministic recovery within 100 µs of power restoration. |
Use Scenario: Storing calibration coefficients and last-scan configuration in portable ultrasound units. IC Role / Device Role / Timing Role: High-reliability parameter store accessed during boot and scan initialization. Use Value: Guarantees coefficient integrity across 10+ years of field use and repeated thermal cycling without recalibration. |
| Smart Meter | Industrial Control And Monitoring |
|
Use Scenario: Tamper-proof energy accumulation registers updated every second under variable load conditions. IC Role / Device Role / Timing Role: Atomic-write memory for kWh counters with guaranteed write completion before power collapse. Use Value: Meets ANSI C12.22 and IEC 62056 requirements for meter data integrity without EEPROM wear leveling. |
Use Scenario: Logging sensor fault events and controller watchdog resets in distributed I/O modules. IC Role / Device Role / Timing Role: Ring-buffer memory capturing timestamped diagnostics with no write latency jitter. Use Value: Enables root-cause analysis of intermittent faults using full-history trace data preserved across 100,000+ power cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14V104N-ZSP25XI | 4Mbit nvSRAM, 25 ns access, 3.3 V, 44-pin TSOP; requires external capacitor for STORE operation | Capacitor-dependent STORE introduces 1–5 ms latency during power loss; less robust in brownout scenarios | Select when legacy 44-pin footprint is mandatory and system can guarantee clean power-down signaling |
| Infineon F-RAM FM24V04-G | 4Mbit parallel FRAM, 45 ns access, 3.3 V, 44-pin TSOP; unlimited endurance but 10-year retention only at ≤85°C | Limited retention at elevated temperatures restricts use in sealed enclosures above 85°C ambient | Select for cost-sensitive designs where 85°C max operating temp suffices and FRAM's faster write burst is beneficial |
Compared with CY14V104N-ZSP25XI and FM24V04-G, M3004316045NX0ITBR offers superior thermal retention (10 years at 105°C), zero external components for non-volatility, and higher magnetic immunity - making it optimal for harsh industrial deployments requiring guaranteed data survival without power management overhead.
Availability
M3004316045NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-lifecycle support, and guaranteed non-volatility without external backup.
Supply support for M3004316045NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
M3004316045NX0ITBR belongs to Renesas' Parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial systems demanding instant-on reliability, extreme endurance, and wide-temperature non-volatility.
FAQ
What is the maximum operating temperature for M3004316045NX0ITBR?
M3004316045NX0ITBR is rated for industrial temperature range: −40°C to +85°C. It maintains full functionality and guaranteed data retention across this range, with accelerated retention testing confirming 10-year data integrity at 105°C - exceeding its operational spec for margin assurance.
Does M3004316045NX0ITBR require an external capacitor or battery for non-volatility?
No. M3004316045NX0ITBR uses STT-MRAM technology and requires no external capacitor, battery, or backup power source to retain data. All writes are inherently non-volatile upon completion of the 45ns cycle - eliminating failure modes associated with energy-storage components.
Is M3004316045NX0ITBR pin-compatible with standard 54-pin TSOP SRAMs?
M3004316045NX0ITBR uses a 54-pin TSOP package with identical mechanical footprint and pin pitch as JEDEC-standard 54-pin x16 SRAMs. Signal mapping (E#, G#, W#, UB#, LB#, ADDR, DQ) matches industry conventions, enabling direct PCB replacement in most cases - though timing and power sequencing must be verified per design.
What is the write endurance rating of M3004316045NX0ITBR?
M3004316045NX0ITBR has a write endurance of 10¹⁴ cycles - effectively unlimited for all practical industrial applications. This exceeds typical EEPROM (10⁵–10⁶) and Flash (10⁴–10⁵) by 9 orders of magnitude, enabling continuous logging without wear-out management.
How does M3004316045NX0ITBR handle power loss during a write operation?
M3004316045NX0ITBR incorporates write-inhibit logic: when VCC drops below 2.1 V (Vwi), all write operations are automatically blocked. Combined with its intrinsic non-volatility, this ensures no partial or corrupted writes occur - data either commits fully or remains unchanged, preserving atomicity.
M3004316045NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316045NX0ITBR FAQ
1.How can I place an order for M3004316045NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0ITBR reliable?
The price and inventory of M3004316045NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3004316045NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0ITBR?
M3004316045NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0ITBR?
For technical support, including M3004316045NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0ITBR requirements.
6.How does Aetrix verify that M3004316045NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3004316045NX0ITBR?
All M3004316045NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0ITBR part is unused and in its original packaging.
Return procedure for M3004316045NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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