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Renesas M3004316045NX0ITBY
- Part No.:
- M3004316045NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0ITBY.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,500
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Product details
Overview
M3004316045NX0ITBY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7V–3.6V supply voltage, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0ITBY datasheet, M3004316045NX0ITBY pinout, M3004316045NX0ITBY application, or M3004316045NX0ITBY equivalent, this page provides verified timing parameters, TSOP-54 pin mapping, endurance (10¹⁴ cycles), data retention (10 years at 105°C), and direct alternatives for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface operates asynchronously with separate chip enable (E#), output enable (G#), and write enable (W#) controls, supporting byte-selectable writes via UB#/LB#.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address control logic. It requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms and Vwi write-inhibit threshold of 2.1–2.5V to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 45ns read/write cycle - enables deterministic latency-critical data capture without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of ±10% variation |
| Operating Temp | −40°C to +85°C - qualified for uncontrolled industrial environments including PLC backplanes |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware overhead in high-frequency logging applications |
| Data Retention | 10 years at 105°C - ensures data integrity over full product lifecycle without backup power or refresh |
| Interface | Parallel asynchronous x16 - drop-in replacement for legacy SRAM/PSRAM in existing 16-bit bus designs |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-grade plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing to prevent spurious writes |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers; determines read data validity timing (tGLQV ≤ 25ns) |
| W# | Write Enable | Active-low signal selecting write mode; high during reads to avoid bus contention |
| UB# / LB# | Upper/Lower Byte Enable | Independent x8 write masking - enables partial-word updates without read-modify-write overhead |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density; no address latching required due to asynchronous operation |
| DQ[15:0] | Bidirectional Data I/O | True x16 parallel bus; supports simultaneous upper/lower byte access with Hi-Z control on deselect |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; 10.0pF input capacitance limits trace length to ≤10cm for 45ns timing compliance |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or refresh - eliminates battery/SRAM+backup capacitor subsystems |
| SRAM-compatible timing | 45ns read/write cycles with no erase latency - integrates into legacy SRAM-based controllers without firmware changes |
| Infinite endurance | 10¹⁴ write cycles - supports continuous 1kHz logging for >3,000 years without degradation |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - immune to typical industrial motor/transformer EMI |
| Industrial temp support | −40°C to +85°C operation with 10-year data retention at 105°C - validated for extended deployment in harsh enclosures |
Applications
| Factory Automation PLC | Multifunction Printer Controller |
|---|---|
Use Scenario: Real-time I/O state logging and recipe storage in programmable logic controllers with no downtime for memory maintenance. IC Role / Device Role / Timing Role: Non-volatile working memory replacing battery-backed SRAM; retains ladder logic variables and sensor history across power cycles. Use Value: Eliminates battery replacement service intervals and prevents data loss during unexpected outages - critical for ISO 13849-compliant safety functions. |
Use Scenario: Storing firmware patches, calibration tables, and job queue metadata in high-volume office printers with frequent power cycling. IC Role / Device Role / Timing Role: Persistent program/data memory interfacing directly to ARM Cortex-A53 host via 16-bit parallel bus. Use Value: Enables instant-on resume after sleep mode and guarantees job recovery after AC dropout - reduces customer-reported "lost print jobs" by >99%. |
| Industrial Data Router | Smart Energy Meter |
Use Scenario: Caching packet forwarding rules and session state in DIN-rail mounted industrial Ethernet switches deployed in substations. IC Role / Device Role / Timing Role: High-reliability configuration store accessed concurrently by dual-core network processor for failover synchronization. Use Value: Maintains routing table integrity during grid transients (IEC 61000-4-28 compliant) - prevents network partitioning during voltage sags. |
Use Scenario: Recording tamper events, tariff logs, and waveform snapshots in ANSI C12.20-certified revenue meters operating in outdoor utility cabinets. IC Role / Device Role / Timing Role: Secure non-volatile memory for cryptographic keys and billing records; isolated via hardware write-protect pins. Use Value: Meets 10-year data retention mandate under IEEE 1377 without supplemental EEPROM - reduces BOM count and field failure risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns access; requires external capacitor for write-back; 20-year data retention at 65°C | Limited to 20-year retention at lower temperatures; capacitor aging affects long-term reliability | Select when legacy nvSRAM footprint compatibility is mandatory and capacitor maintenance is acceptable |
| Infineon F-RAM FM24V04-G | 4Mbit parallel FRAM with 45ns access; unlimited endurance but 10-year retention only at ≤85°C | Lower magnetic immunity (10,000 A/m); unsuitable for high-EMI motor drive environments | Select for ultra-low-power (<1µA standby) applications where thermal derating is controlled and EMI is minimal |
Compared with CY14B104N-45ZXC and FM24V04-G, M3004316045NX0ITBY offers superior data retention at elevated temperatures (10 years at 105°C vs. 20 years at 65°C or 10 years at 85°C), eliminates external energy storage components, and provides higher magnetic field immunity - making it optimal for unattended industrial deployments.
Availability
M3004316045NX0ITBY is available at Aetrix Electronics and suitable for factory automation, multifunction printer controller, and industrial data router applications requiring stable component supply across extended product lifecycles.
Supply support for M3004316045NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316045NX0ITBY belongs to the M3xxx316 parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial control systems where data persistence, speed, and reliability cannot be compromised.
FAQ
What is the maximum operating temperature for M3004316045NX0ITBY?
M3004316045NX0ITBY is rated for industrial temperature range: −40°C to +85°C. Its data retention specification guarantees 10 years at 105°C, exceeding operational limits to ensure margin for thermal stress in enclosed enclosures. This allows safe deployment in control cabinets with ambient temperatures up to 85°C without derating.
Does M3004316045NX0ITBY require a backup capacitor or battery?
No, M3004316045NX0ITBY does not require any external energy storage. As a true MRAM, it retains data instantly and indefinitely upon power removal - eliminating batteries, supercapacitors, and associated circuitry needed by nvSRAM or FRAM alternatives. This reduces BOM cost and improves long-term field reliability.
Is M3004316045NX0ITBY pin-compatible with standard 4Mbit SRAMs?
M3004316045NX0ITBY uses a 54-pin TSOP package with industry-standard pinout for x16 parallel memories, matching JEDEC MO-142AB. Signal assignments (E#, G#, W#, UB#, LB#, ADDR[17:0], DQ[15:0]) align with common SRAM footprints, enabling drop-in replacement in existing PCB layouts without redesign - provided timing margins accommodate 45ns access.
What is the write endurance rating of M3004316045NX0ITBY?
M3004316045NX0ITBY guarantees 10¹⁴ write cycles per memory location - effectively infinite for all practical industrial applications. For example, writing once per millisecond continuously would take over 3,170 years to reach this limit. This eliminates wear leveling, garbage collection, or lifetime monitoring firmware.
How does M3004316045NX0ITBY handle power loss during a write operation?
M3004316045NX0ITBY incorporates write-inhibit logic: when VCC drops below Vwi (2.1–2.5V), all write operations are automatically blocked. Combined with intrinsic MRAM non-volatility, this ensures no partial writes or data corruption occurs - unlike Flash or EEPROM, which require complex error recovery after brownout.
M3004316045NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316045NX0ITBY FAQ
1.How can I place an order for M3004316045NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0ITBY reliable?
The price and inventory of M3004316045NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3004316045NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0ITBY?
M3004316045NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0ITBY?
For technical support, including M3004316045NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0ITBY requirements.
6.How does Aetrix verify that M3004316045NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3004316045NX0ITBY?
All M3004316045NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0ITBY part is unused and in its original packaging.
Return procedure for M3004316045NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0ITBY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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