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Renesas M3004316045NX0PBCR
- Part No.:
- M3004316045NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3004316045NX0PBCR.pdf
- Description:
- IC RAM 4MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,710
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Product details
Overview
M3004316045NX0PBCR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile persistence with SRAM-like random access, enabling instant write-on-power-loss in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3004316045NX0PBCR datasheet, M3004316045NX0PBCR pinout, M3004316045NX0PBCR application, or M3004316045NX0PBCR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable control logic, and validated alternative MRAM options for industrial embedded designs requiring zero-latency non-volatility.
Technical Context
This MRAM implements spin-transfer torque (STT) technology on a 40nm pMTJ process, supporting true random read/write without erase cycles or wear leveling. Its parallel x16 interface uses standard asynchronous control signals - E#, G#, W#, UB#, LB# - with separate upper/lower byte enables for partial-word writes.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down; write inhibition activates below Vwi = 2.1–2.5V. The device guarantees 10¹⁴ write cycles and 10-year data retention at 105°C, with magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 45ns read/write cycle - enables deterministic real-time logging without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial bus standards and brownout-tolerant operation |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive edge nodes and high-ambient industrial PLCs |
| Endurance | 10¹⁴ write cycles - eliminates lifetime concerns in high-frequency data logging applications |
| Data Retention | 10 years at 105°C - ensures firmware and calibration data integrity over full product lifecycle |
| Package | 48-ball FBGA (10mm × 10mm) - supports high-density PCB layouts with thermal resistance θJA = 42.67°C/W |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down top view) with 3.3V-compatible I/Os, RoHS/REACH compliance, and no internal pull-ups/pull-downs on control pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must track VCC during power sequencing; disables all I/O when high |
| G# | Output Enable | Active-low output driver control - sets DQ[15:0] to Hi-Z when high; required low for read operations |
| W# | Write Enable | Active-low write strobe - low initiates write; high enables read; must be high during read access |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8] - allows independent 8-bit writes to upper half of x16 bus |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0] - enables selective 8-bit writes to lower half without disturbing upper bytes |
| ADDR[17:0] | Address Inputs | 18-bit address bus - selects one of 262,144 locations in 4Mbit array; ADDR[18+] are NC |
| DQ[15:0] | Bidirectional Data | x16 data bus - high-impedance when E#, G#, or W# inactive; supports byte-selectable read/write |
| VCC / VSS | Power / Ground | Single 3.3V supply domain - no separate I/O or core rails; 1.5–2.5mA standby current at 85°C |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible 45ns read/write timing with inherent non-volatility - eliminates backup batteries and external EEPROM |
| Byte-selectable write architecture | Independent UB#/LB# controls enable partial-word writes without read-modify-write overhead |
| Zero-erase, infinite endurance | 10¹⁴ write cycles - supports continuous logging in smart meters and network packet buffers without degradation |
| High-temp data retention | 10-year retention at 105°C - ensures firmware and calibration storage integrity in sealed industrial enclosures |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - suitable for deployment near motors, transformers, and MRI equipment |
Applications
| Factory Automation Controllers | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Real-time motion control logic with persistent state storage across power cycles in robotic PLCs. IC Role / Device Role / Timing Role: Non-volatile program memory and runtime parameter store - retains position registers and safety thresholds without battery backup. Use Value: Eliminates supercapacitor/battery maintenance while guaranteeing sub-50ns write latency for emergency stop command logging. |
Use Scenario: Storing calibration coefficients and image processing firmware in portable ultrasound devices. IC Role / Device Role / Timing Role: Boot ROM and configuration register shadow memory - powers up instantly with validated settings pre-loaded. Use Value: Achieves <100ms boot-to-ready time and maintains FDA-required traceability logs for 10+ years at body-temperature-equivalent ambient. |
| Industrial Ethernet Switches | Smart Energy Meters |
Use Scenario: Packet buffer metadata storage and MAC table persistence in DIN-rail mounted switches. IC Role / Device Role / Timing Role: High-speed lookup table memory - stores port forwarding rules and VLAN mappings with atomic write capability. Use Value: Prevents rule corruption during grid-induced brownouts; sustains 100k+ write cycles per day for 15+ years. |
Use Scenario: Tamper-proof energy consumption history and tariff schedule storage in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Secure non-volatile event log - records voltage sags, phase loss, and meter reset events with time stamps. Use Value: Meets ANSI 12.22 10-year data retention mandate at 105°C ambient without thermal derating or refresh cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns access, but requires external capacitor for write-back; 2.7–3.6V, −40°C to +85°C only | Limited to industrial (not industrial-plus) temp range; capacitor dependency adds BOM cost and reliability risk | Select when legacy nvSRAM footprint compatibility is mandatory and 105°C operation is not required |
| Everspin MR2A16AUCYS35 | 4Mbit parallel MRAM, 35ns access, same 48-ball FBGA, but rated −40°C to +85°C only and lacks LB#/UB# byte enables | No independent byte write capability; requires full-word writes, increasing power and bus contention in partial-update scenarios | Choose for maximum speed where byte-select is unnecessary and extended temperature is not critical |
Compared with CY14B104N-45ZXC and MR2A16AUCYS35, M3004316045NX0PBCR uniquely combines industrial-plus temperature rating, true byte-selectable writes via UB#/LB#, and capacitor-free non-volatility - making it optimal for next-generation edge controllers demanding zero-maintenance, high-temperature resilience, and deterministic partial-word update performance.
Availability
M3004316045NX0PBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-plus temperature qualification.
Supply support for M3004316045NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
M3004316045NX0PBCR belongs to Renesas' Parallel MRAM family, engineered specifically for industrial and automotive applications needing battery-free, high-endurance, fast non-volatile memory with deterministic timing and extended temperature operation.
FAQ
What is the operating voltage range for M3004316045NX0PBCR?
M3004316045NX0PBCR operates from 2.7V to 3.6V, with Vwi (write inhibit voltage) specified between 2.1V and 2.5V. This ensures reliable operation across standard 3.3V industrial bus rails and provides defined safe margins during brownout conditions. The device remains fully functional across its entire voltage range without performance derating.
Does M3004316045NX0PBCR require external components like capacitors or batteries for non-volatile operation?
No, M3004316045NX0PBCR requires no external capacitors, batteries, or backup power sources. Its STT-MRAM technology provides inherent non-volatility - all data persists automatically upon power removal. This eliminates BOM complexity, reduces board space, and removes failure modes associated with backup energy storage.
How does the byte-enable functionality (UB# and LB#) work in M3004316045NX0PBCR?
In M3004316045NX0PBCR, UB# and LB# are active-low signals that independently gate DQ[15:8] and DQ[7:0]. When only UB# is low (LB# high), only upper-byte writes occur; when only LB# is low, only lower-byte writes occur. This enables true partial-word updates without read-modify-write sequences, reducing bus traffic and power consumption in mixed-data-width systems.
What is the data retention specification for M3004316045NX0PBCR at 105°C?
M3004316045NX0PBCR guarantees 10 years of data retention at 105°C, as confirmed in Table 16 of the official datasheet. This is validated under continuous operation at maximum junction temperature and forms the basis for long-life deployments in sealed industrial enclosures, automotive under-hood modules, and medical devices operating in thermally constrained environments.
Is M3004316045NX0PBCR pin-compatible with other densities in the M3xxx316 family?
No, M3004316045NX0PBCR is not pin-compatible with higher-density variants (e.g., M3008316 or M3016316) in the same FBGA package. While all use the 48-ball FBGA footprint, address pin count differs: M3004316045NX0PBCR uses ADDR[17:0] (18 pins), whereas 8Mbit+ variants require ADDR[18:0] or more. Pin mapping must be verified per density using the official Renesas pinout diagrams.
M3004316045NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3004316045NX0PBCR FAQ
1.How can I place an order for M3004316045NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0PBCR reliable?
The price and inventory of M3004316045NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3004316045NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0PBCR?
M3004316045NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0PBCR?
For technical support, including M3004316045NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0PBCR requirements.
6.How does Aetrix verify that M3004316045NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3004316045NX0PBCR?
All M3004316045NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0PBCR part is unused and in its original packaging.
Return procedure for M3004316045NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0PBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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