Renesas M3004316045NX0PBCY

Overview

M3004316045NX0PBCY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile persistence with SRAM-like random access, enabling immediate data retention on power loss-ideal for factory automation controllers requiring deterministic write latency and infinite endurance.

For engineers reviewing the M3004316045NX0PBCY datasheet, M3004316045NX0PBCY pinout, M3004316045NX0PBCY application, or M3004316045NX0PBCY equivalent, this page provides verified technical context, package mapping to 48-ball FBGA, validated timing parameters, and real-world use cases in industrial control and medical diagnostics where data integrity under brownout or thermal stress is critical.

Technical Context

The M3004316045NX0PBCY implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, enabling true byte- and word-level random reads/writes without erase cycles. Its parallel asynchronous interface uses active-low E#, G#, W#, UB#, and LB# controls to manage chip enable, output enable, write strobe, and upper/lower byte selection independently.

Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms and Vwi (write inhibit voltage) at 2.1–2.5V. The device supports 18-bit addressing (ADDR[17:0]) for its 262,144 × 16 memory array and exhibits 10¹⁴ write endurance and 10-year data retention at 105°C.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS/REACH compliant, suitable for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Compared with CY14B104N-BA45XI and FM22L16-55-TG, the M3004316045NX0PBCY offers superior temperature resilience, double the write endurance, and true x16 byte-selectable operation - making it the only option qualified for continuous 105°C operation with full SRAM-equivalent timing and zero external components.

Availability

M3004316045NX0PBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-plus temperature performance.

Supply support for M3004316045NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and thermal robustness cannot be compromised.

FAQ

What is the maximum operating temperature specification for M3004316045NX0PBCY?

The M3004316045NX0PBCY is rated for industrial-plus operation from −40°C to +105°C ambient temperature. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. The device maintains full 45ns timing compliance and 10¹⁴ endurance across this full range, making M3004316045NX0PBCY suitable for sealed enclosures in motor control drives and diagnostic imaging equipment.

Does M3004316045NX0PBCY require an external capacitor or backup power source?

No, M3004316045NX0PBCY does not require any external capacitor, battery, or backup power source. Its intrinsic MRAM cell structure provides true non-volatility - all data persists automatically upon power removal. Unlike nvSRAM or battery-backed SRAM, M3004316045NX0PBCY eliminates associated BOM cost, board space, and reliability risks from capacitor aging or battery leakage.

What package type is used for M3004316045NX0PBCY and what are its dimensions?

M3004316045NX0PBCY uses a 48-ball FBGA package with 10mm × 10mm footprint and balls-down orientation. This package is documented in Renesas datasheet pages 9–10 and 13, and supports densities from 4Mbit to 32Mbit. Its compact size and standard pitch enable high-density routing in space-constrained industrial modules where the M3004316045NX0PBCY is commonly deployed.

How many address lines does M3004316045NX0PBCY require for full memory access?

M3004316045NX0PBCY requires 18 address lines (ADDR[17:0]) to access its full 4Mbit (262,144 × 16) memory array. This is explicitly stated in the "Signal Description" section (page 8) and "Architecture" section (page 14) of the Renesas datasheet. No address multiplexing or external latching is needed - all addresses are presented in parallel per access cycle.

Is M3004316045NX0PBCY pin-compatible with other devices in the M3xxx316 family?

M3004316045NX0PBCY shares identical pinout and signal assignment with all 48-ball FBGA variants in the M3xxx316 family (e.g., M3008316045NX0PBCY, M3016316045NX0PBCY), as confirmed in Figure 2 and Package Drawings (pages 8–13). However, it is not pin-compatible with TSOP-packaged variants (TA/TB) due to differing ball/pin counts and physical layout - M3004316045NX0PBCY must be used only in FBGA-optimized designs.