Renesas M3004316045NX0PTAR

Overview

M3004316045NX0PTAR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers where power loss resilience and sub-50ns write latency are critical.

For engineers reviewing the M3004316045NX0PTAR datasheet, M3004316045NX0PTAR pinout, M3004316045NX0PTAR application, or M3004316045NX0PTAR equivalent, this page provides verified package mapping (54-pin TSOP), validated timing parameters (tAVAV = 45ns, tDVWH = 15ns), endurance (10¹⁴ cycles), and direct alternative options for industrial-grade persistent memory replacement.

Technical Context

The M3004316045NX0PTAR implements STT-MRAM technology using 40nm pMTJ cells, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and supports byte-selectable writes and word-aligned reads.

Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with write inhibition below Vwi (2.1–2.5V). The device guarantees 10-year data retention at 105°C and withstands magnetic fields up to 24,000 A/m during both read and write operations.

Key Specifications

Pinout & Package

Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus grade.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Compared with CY14B104N-45ZXC and FM43L16A-45-S, the M3004316045NX0PTAR eliminates external support components, extends temperature capability to +105°C, and provides 10,000× higher endurance - making it optimal for mission-critical industrial logging where reliability and simplicity are prioritized over marginal power savings.

Availability

M3004316045NX0PTAR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, smart energy meters, and industrial Ethernet switches requiring stable component supply across extended temperature ranges and multi-decade product lifecycles.

Supply support for M3004316045NX0PTAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The M3xxx316 family was designed specifically to replace battery-backed SRAM and nvSRAM in industrial control systems requiring guaranteed non-volatility, zero-latency writes, and extended temperature operation without external support circuitry.

FAQ

What is the maximum magnetic field tolerance of the M3004316045NX0PTAR during active operation?

The M3004316045NX0PTAR is rated for continuous operation in magnetic fields up to 24,000 A/m during both read and write cycles. This immunity level is inherent to its perpendicular magnetic tunnel junction (pMTJ) STT-MRAM cell structure and is validated per JEDEC standards - making it suitable for deployment near motors, transformers, and MRI equipment where conventional MRAM or FRAM may experience bit errors.

Does the M3004316045NX0PTAR require external capacitors or backup power sources?

No, the M3004316045NX0PTAR does not require external capacitors, batteries, or charge-pump circuits. Its intrinsic non-volatility stems from magnetic storage physics, not charge retention. Unlike nvSRAM or battery-backed SRAM, it retains data indefinitely at power-off with zero support components - reducing bill-of-materials cost and board space while eliminating capacitor aging and leakage concerns.

How does the 45ns access time of the M3004316045NX0PTAR compare to Flash-based alternatives in real-time applications?

The M3004316045NX0PTAR's 45ns read/write access time is 100× faster than typical NOR Flash (≥4µs) and eliminates erase latency entirely. In real-time applications like motion control, this enables deterministic state capture on power loss without predictive algorithms or large SRAM buffers - ensuring zero data loss even during 100kHz sampling bursts, whereas Flash-based solutions would stall execution for erase cycles.

Is the M3004316045NX0PTAR pin-compatible with standard 54-pin TSOP x16 memories?

Yes, the M3004316045NX0PTAR uses industry-standard 54-pin TSOP II (10mm × 22mm) mechanical dimensions and pinout alignment. Signal assignments (E#, G#, W#, ADDR[17:0], DQ[15:0], UB#, LB#, VCC, VSS) match JEDEC MO-142 specifications - enabling drop-in replacement for legacy PSRAM, nvSRAM, and asynchronous SRAM in existing PCB layouts without redesign.

What is the minimum VCC voltage at which the M3004316045NX0PTAR guarantees data retention during power-down?

The M3004316045NX0PTAR guarantees data retention during power-down as long as VCC remains above the write-inhibit threshold Vwi (2.1V minimum, 2.3V typical). Below this voltage, write operations are disabled to prevent corruption, but stored data remains intact indefinitely. This behavior is intrinsic to STT-MRAM physics and requires no external voltage monitoring circuitry.