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Renesas M3004316045NX0PTAY
- Part No.:
- M3004316045NX0PTAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0PTAY.pdf
- Description:
- IC RAM 4MBIT PAR 44TSOPII
- Quantity:
- Payment:
- Shipping:
Inventory:2,733
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Product details
Overview
M3004316045NX0PTAY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply voltage, and industrial-plus temperature range (–40°C to +105°C). It delivers non-volatile storage with SRAM-compatible timing, infinite write endurance, and 10-year data retention at 105°C - ideal for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0PTAY datasheet, M3004316045NX0PTAY pinout, M3004316045NX0PTAY application, or M3004316045NX0PTAY equivalent, this page provides verified technical context, package-specific pin assignments, functional operation modes, and validated alternative MRAM options for industrial embedded systems requiring deterministic non-volatility without battery backup.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads and writes with no erase cycles or wear leveling. Its parallel x16 interface operates asynchronously with separate chip enable (E#), output enable (G#), and write enable (W#) controls, supporting byte-selectable upper/lower word access via UB#/LB#.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address control logic - all powered from a single 3.0V supply. Initialization requires strict power sequencing: E#, W#, and G# must track VCC during both power-up (tPU ≥ 1ms) and power-down to prevent undefined states or data corruption.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) - supports compact firmware/data storage without external memory management logic |
| Access Time | 45ns read/write cycle - enables direct replacement of legacy PSRAM or low-density NOR Flash in timing-critical control loops |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Operating Temp | –40°C to +105°C - qualified for under-hood automotive modules and high-ambient industrial PLCs |
| Data Retention | 10 years at 105°C - eliminates need for periodic refresh or backup power in always-on monitoring applications |
| Endurance | 10¹⁴ write cycles - supports continuous logging at 1kHz for >3,000 years without degradation |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB#, ADDR[17:0], DQ[15:0] - requires no clock or command protocol overhead |
Pinout & Package
Package: 44-pin TSOP (10mm × 18mm), lead-free and RoHS/REACH compliant. Designed for drop-in compatibility with legacy 44-pin parallel memory sockets in space-constrained industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; places device in standby (ISB ≤ 2.5mA) when high, enabling low-power sleep between operations |
| G# | Output Enable | Active-low control for bidirectional DQ[15:0] drivers; sets outputs to Hi-Z when high to avoid bus contention |
| W# | Write Enable | Active-low signal that latches DQ[15:0] data on falling edge; distinguishes read (W# = high) from write (W# = low) |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes - enables partial-word writes without read-modify-write |
| ADDR[17:0] | Address Inputs | 18-bit address bus selecting one of 262,144 locations; no address multiplexing required |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; supports simultaneous 2-byte transfers with sub-50ns latency and 10pF pin capacitance |
| VCC / VSS | Power / Ground | Single 3.0V supply with dedicated ground pins; requires local 100nF decoupling per VCC pin per datasheet layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or backup capacitors - eliminates supercapacitor circuits and associated BOM cost |
| SRAM-compatible timing | 45ns read/write cycles with no wait states - integrates directly into existing SRAM-based microcontroller buses without timing redesign |
| Infinite endurance | 10¹⁴ write cycles - removes lifetime limitations seen in Flash/EEPROM, critical for cyclic data buffers in motion control |
| Industrial-plus temp range | –40°C to +105°C operation - qualified for deployment in motor drives, power inverters, and outdoor smart metering hardware |
| Parallel x16 interface | Full 16-bit data width with independent byte enables - maximizes throughput for burst-mode logging while minimizing address strobe overhead |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Buffers |
|---|---|
Use Scenario: Storing real-time sensor fusion data and motion trajectory parameters across power cycles in robotic arm controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known position, calibration offsets, and safety state flags. Use Value: Eliminates boot-time reinitialization delays and ensures deterministic recovery after unexpected shutdowns. |
Use Scenario: Capturing transient image frame metadata and acquisition timestamps during ultrasound or X-ray pulse sequences. IC Role / Device Role / Timing Role: High-speed buffer for time-critical metadata before transfer to main DRAM or SSD storage. Use Value: Guarantees zero-data-loss capture at 10kHz sampling rates without wear-out concerns over 10+ year device lifespan. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, billing intervals, and firmware update logs in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Secure, long-retention event log storage resistant to magnetic field interference (24kA/m immunity). Use Value: Meets 10-year regulatory data retention mandates without battery or capacitor support circuitry. |
Use Scenario: Storing routing table snapshots and configuration checksums in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Fast-access configuration store enabling sub-100ms failover during link redundancy switchover. Use Value: Reduces network downtime by avoiding slow Flash reprogramming during hot-swap module replacement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit, 35ns access, 3.3V, 44-pin TSOP - identical density and package but faster timing and narrower temp range (–40°C to +85°C) | Limited to industrial-grade ambient environments; lacks 105°C qualification for under-hood or high-temp enclosure use | Select when system-level timing budget allows 35ns and operating temperature stays ≤85°C |
| Renesas M3004316035NX0PTAY | Same 4Mbit density, 44-pin TSOP, and industrial-plus rating - differs only in 35ns vs. 45ns access time | Higher performance variant suitable where deterministic <35ns latency is required for real-time interrupt service routines | Choose for applications demanding maximum bandwidth within same thermal and physical constraints |
Compared with Everspin MR2A16A and Renesas' own 35ns variant M3004316035NX0PTAY, the M3004316045NX0PTAY trades 10ns of access speed for broader availability and tighter production binning - making it optimal for cost-sensitive, thermally demanding deployments where 45ns meets system timing margins.
Availability
M3004316045NX0PTAY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging buffers, smart energy meters, and industrial network routers requiring stable component supply across extended temperature ranges and multi-year production lifecycles.
Supply support for M3004316045NX0PTAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy Flash in mission-critical industrial systems where data integrity, write endurance, and extended temperature operation are non-negotiable.
FAQ
What is the guaranteed data retention period for M3004316045NX0PTAY at its maximum operating temperature?
M3004316045NX0PTAY guarantees 10 years of data retention at +105°C, as specified in Table 16 of the official Renesas datasheet. This is measured under worst-case conditions and reflects actual accelerated life testing - not extrapolated estimates. The retention period extends to 1,000 years at 85°C and over 1 million years at 65°C, confirming robustness for long-lifecycle industrial deployments. M3004316045NX0PTAY maintains this specification without requiring external power or refresh cycles.
Does M3004316045NX0PTAY require a power-on reset sequence or initialization firmware?
M3004316045NX0PTAY requires strict power sequencing but no software initialization: E#, W#, and G# inputs must follow VCC during both power-up and power-down, with tPU ≥ 1ms after VCC reaches minimum (2.7V). No register programming, command sequences, or firmware overhead is needed - the device is immediately ready for read/write operations upon valid address and control signals. This behavior is intrinsic to M3004316045NX0PTAY's asynchronous parallel architecture and eliminates boot-time dependencies.
Can M3004316045NX0PTAY be used as a direct replacement for standard SRAM in an existing design?
Yes, M3004316045NX0PTAY is pin- and function-compatible with many 44-pin x16 parallel SRAMs, including common 4Mbit devices, due to identical TSOP-44 footprint, signal naming (E#, G#, W#, UB#, LB#, ADDR[17:0], DQ[15:0]), and timing model. However, designers must verify Vwi (2.1–2.5V) compliance during brownout and ensure no reliance on SRAM's volatile behavior - because M3004316045NX0PTAY retains data through power loss. No PCB changes are required for mechanical fit or signal routing.
What magnetic field immunity does M3004316045NX0PTAY provide during normal operation?
M3004316045NX0PTAY is rated for 24,000 A/m magnetic field immunity during both read and write operations, per Tables 9 and 11 in the Renesas datasheet. This level exceeds typical industrial electromagnetic interference (EMI) limits and ensures reliable operation near motors, transformers, and MRI equipment. The pMTJ STT-MRAM cell structure inherently resists magnetic perturbation - unlike older MRAM technologies - making M3004316045NX0PTAY suitable for high-noise factory floor environments without additional shielding.
How does the write endurance of M3004316045NX0PTAY compare to Flash or EEPROM alternatives?
M3004316045NX0PTAY offers 10¹⁴ write cycles - 100 million times greater than typical NAND Flash (10⁴–10⁵ cycles) and 10,000 times greater than serial EEPROM (10⁶ cycles). This enables continuous logging at 1kHz for over 3,000 years without wear leveling or block management. Unlike Flash, M3004316045NX0PTAY performs true byte-level writes with no erase-before-write penalty, eliminating latency spikes and complexity in real-time control applications.
M3004316045NX0PTAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M3004316045NX0PTAY FAQ
1.How can I place an order for M3004316045NX0PTAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0PTAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0PTAY reliable?
The price and inventory of M3004316045NX0PTAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0PTAY is usually 5 days.
3.What payment methods are accepted for M3004316045NX0PTAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0PTAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0PTAY?
M3004316045NX0PTAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0PTAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0PTAY?
For technical support, including M3004316045NX0PTAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0PTAY requirements.
6.How does Aetrix verify that M3004316045NX0PTAY is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0PTAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0PTAY meets industry standards.
7.What is the process for return or replacement of M3004316045NX0PTAY?
All M3004316045NX0PTAY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0PTAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0PTAY part is unused and in its original packaging.
Return procedure for M3004316045NX0PTAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0PTAY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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