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Renesas M3004316045NX0PTBR
- Part No.:
- M3004316045NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0PTBR.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,235
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Product details
Overview
M3004316045NX0PTBR from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible random access for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0PTBR datasheet, M3004316045NX0PTBR pinout, M3004316045NX0PTBR application, or M3004316045NX0PTBR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable control logic, and validated alternatives for high-reliability embedded memory replacement.
Technical Context
The M3004316045NX0PTBR implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, enabling true random read/write without erase cycles. Its parallel x16 interface uses active-low E#, G#, W#, UB#, and LB# controls to manage chip select, output enable, write direction, and byte masking - supporting word, upper-byte, and lower-byte operations independently.
It requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms after VCC reaches minimum. Write inhibition activates below Vwi = 2.1–2.5V, preventing corruption during brownout. Magnetic immunity is rated to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 organization) |
| Access Time | 45ns read/write cycle - enables deterministic latency-critical data capture in PLC I/O modules |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails without LDO overhead |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and industrial edge gateways |
| Data Retention | 10 years at 105°C - ensures firmware state persistence across full thermal lifecycle |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware complexity in cyclic logging applications |
| Interface | Parallel asynchronous x16 with UB#/LB# byte control - supports legacy microcontroller bus interfaces without glue logic |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global select; must track VCC during power sequencing to prevent initialization failure |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; high-Z when deasserted to avoid bus contention |
| W# | Write Enable | Active-low direction control: low = write, high = read; determines data flow on DQ bus |
| UB# | Upper Byte Enable | Active-low mask for DQ[15:8]; enables partial-word writes without disturbing upper byte |
| LB# | Lower Byte Enable | Active-low mask for DQ[7:0]; allows independent lower-byte updates in multi-threaded contexts |
| ADDR[17:0] | Address Inputs | 18-bit address bus for 4Mbit density; no address multiplexing required |
| DQ[15:0] | Bidirectional Data | x16 data path; supports simultaneous 16-bit transfers with byte-select granularity |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | Eliminates backup battery or capacitor circuitry while retaining 35/45ns random-access performance |
| Byte-selectable write control | UB#/LB# pins enable atomic 8-bit updates - critical for status flag registers in safety-critical systems |
| 10¹⁴ write endurance | Supports continuous 1kHz logging for >3,000 years without degradation - removes lifetime monitoring overhead |
| 24,000 A/m magnetic immunity | Operates reliably near motors, solenoids, and transformers without shielding or derating |
| Industrial-plus temperature rating | Validated operation up to +105°C ambient - suitable for sealed enclosures in factory-floor environments |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging System |
|---|---|
Use Scenario: Real-time acquisition of sensor data from robotic motion axes with deterministic timestamping and fault logging. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last-known safe position and error codes between power cycles. Use Value: Guarantees zero-data-loss recovery after unexpected shutdown - meets IEC 61508 SIL-2 requirements for functional safety. | Use Scenario: Buffering raw image frames from ultrasound transducer arrays before GPU-based reconstruction. IC Role / Device Role / Timing Role: High-speed, low-latency frame buffer with instant power-loss resilience during patient scanning. Use Value: Prevents image corruption during transient AC dropout - avoids repeat scans and improves clinical throughput. |
| Smart Energy Meter | Industrial Ethernet Switch |
Use Scenario: Storing tamper-event logs, tariff schedules, and cryptographic keys across decades of field deployment. IC Role / Device Role / Timing Role: Secure, long-retention configuration storage with byte-level update capability for firmware patching. Use Value: Meets ANSI C12.22 and DLMS/COSEM security mandates without external EEPROM or Flash wear management. | Use Scenario: Holding MAC address tables, port statistics, and QoS policy rules in Layer 2 switching ASICs. IC Role / Device Role / Timing Role: Low-latency, high-endurance packet metadata store accessible by multiple switch fabric engines. Use Value: Enables sub-microsecond table lookups with guaranteed persistence - reduces control-plane failover time to <10ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14V104N-45LXC | 4Mbit nvSRAM with 45ns access, but requires external capacitor for data retention; limited to 85°C max operating temp | Lacks industrial-plus rating and magnetic immunity - unsuitable for motor-drive proximity or high-temp enclosures | Select only if capacitor-based retention is acceptable and ambient stays ≤85°C |
| AS4C4M16SA-45BCN | 4Mbit SDRAM with 45ns tRC, volatile-only; requires refresh controller and external backup for persistence | No inherent non-volatility - adds system-level complexity for power-fail save logic and battery management | Choose only when cost sensitivity outweighs reliability and design simplicity requirements |
Compared with CY14V104N-45LXC and AS4C4M16SA-45BCN, the M3004316045NX0PTBR eliminates external energy storage, extends temperature range by 20°C, and removes refresh overhead - reducing BOM count by 3 components and PCB area by ≥120 mm² in space-constrained designs.
Availability
M3004316045NX0PTBR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, smart energy meters, and industrial Ethernet switches requiring stable component supply across extended product lifecycles.
Supply support for M3004316045NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and serial NOR Flash in high-reliability, latency-sensitive embedded systems where data integrity across power loss is non-negotiable.
FAQ
What is the maximum operating temperature for M3004316045NX0PTBR?
The M3004316045NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC JESD22-A108 and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. The device maintains full 45ns timing compliance and 10¹⁴ endurance across this full range.
Does M3004316045NX0PTBR require an external capacitor or battery for non-volatility?
No, the M3004316045NX0PTBR does not require any external capacitor or battery. Its STT-MRAM technology provides intrinsic non-volatility - data persists indefinitely without auxiliary power. Unlike nvSRAM (e.g., Cypress CY14V104N), the M3004316045NX0PTBR retains all stored bits immediately after VCC removal, with no hold-up time or energy storage dependency.
Which package type is used by M3004316045NX0PTBR?
The M3004316045NX0PTBR uses a 54-pin TSOP package (10mm × 22mm), as indicated by the "TB" code in its part number ordering structure (per Page 5, Figure 1). This matches the 54-pin TSOP footprint shown in Page 9's "54-Pin TSOP (4–16Mb) (Top View)" diagram and supports densities up to 16Mbit - consistent with its 4Mbit capacity.
Can M3004316045NX0PTBR be used as a drop-in replacement for standard SRAM?
The M3004316045NX0PTBR is pin-compatible with many 4Mbit ×16 parallel SRAMs in 54-pin TSOP packages and shares identical control signal timing (E#, G#, W#, UB#, LB#). However, it is not a direct drop-in due to mandatory power sequencing (E#/W#/G# must track VCC) and absence of refresh cycles - system firmware must disable refresh and implement proper power-rail coordination.
What is the data retention guarantee for M3004316045NX0PTBR at 105°C?
Per Table 16 (Page 24), the M3004316045NX0PTBR guarantees 10 years of data retention at 105°C. This is measured under accelerated life testing per JEDEC JESD22-A117 and applies to all bits in the 4Mbit array. Retention scales inversely with temperature: 1,000 years at 85°C and 1 million years at 65°C - enabling ultra-long-life deployments in sealed metering or aerospace applications.
M3004316045NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316045NX0PTBR FAQ
1.How can I place an order for M3004316045NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0PTBR reliable?
The price and inventory of M3004316045NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3004316045NX0PTBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0PTBR transactions.
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4.How is shipping managed for M3004316045NX0PTBR?
M3004316045NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0PTBR?
For technical support, including M3004316045NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0PTBR requirements.
6.How does Aetrix verify that M3004316045NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3004316045NX0PTBR?
All M3004316045NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0PTBR part is unused and in its original packaging.
Return procedure for M3004316045NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0PTBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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