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Renesas M3004316045NX0PTBY
- Part No.:
- M3004316045NX0PTBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3004316045NX0PTBY.pdf
- Description:
- IC RAM 4MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,040
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Product details
Overview
M3004316045NX0PTBY from Renesas Electronics is a 4Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3004316045NX0PTBY datasheet, M3004316045NX0PTBY pinout, M3004316045NX0PTBY application, or M3004316045NX0PTBY equivalent, this page provides verified timing parameters, validated TSOP-54 pin mapping, confirmed endurance (10¹⁴ cycles), retention (10 years at 105°C), and direct alternative options for industrial memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports byte- and word-level operations via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
The device implements deterministic write latency (tAVAV = 45ns max), zero write recovery overhead, and magnetic immunity up to 24,000 A/m during both read and write operations - critical for operation near motors or transformers in industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 4Mbit (262,144 × 16 array) - fits compact controller BOMs requiring persistent memory with minimal footprint |
| Access Time | 45ns read/write cycle - enables deterministic real-time response without wait states in PLC firmware |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and high-ambient factory floor deployments |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware and supports continuous sensor data buffering |
| Data Retention | 10 years at 105°C - ensures firmware and calibration data persistence over full product lifecycle without backup power |
| Interface | Parallel asynchronous x16 - directly replaces legacy PSRAM/Flash in existing 16-bit bus designs without glue logic |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must track VCC during power-up/down to prevent corruption |
| G# | Output Enable | Active-low control for DQ[15:0] drivers - enables bidirectional I/O without bus contention |
| W# | Write Enable | Active-low write strobe - low = write, high = read; determines direction of data flow on DQ bus |
| UB# | Upper Byte Enable | Active-low select for DQ[15:8] - allows partial-word writes to reduce power and bus traffic |
| LB# | Lower Byte Enable | Active-low select for DQ[7:0] - enables independent access to lower byte for 8-bit peripheral interfacing |
| ADDR[17:0] | Address Inputs | 18-bit address bus - fully decodes 262,144 locations for 4Mbit density |
| DQ[15:0] | Data I/O | Bidirectional 16-bit data bus - supports simultaneous read/write with no turnaround delay |
| VCC / VSS | Power / Ground | Single 3.3V supply domain - no separate I/O or core rails required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Zero write latency penalty vs. Flash; retains data without power or capacitors |
| 40nm pMTJ STT-MRAM technology | Enables 10¹⁴ endurance and 10-year retention at 105°C - exceeds EEPROM/FRAM specs |
| Byte-selectable write capability | UB#/LB# pins allow 8-bit writes - cuts dynamic power by ~50% vs. full-word operations |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - suitable for motor drive and power converter proximity |
| Industrial-plus temperature rating | Validated operation from −40°C to +105°C - eliminates derating concerns in sealed enclosures |
Applications
| Factory Automation Controllers | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Real-time logging of motion profiles and fault events in servo-driven CNC machines. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last-known position and error codes before power loss. Use Value: Eliminates supercapacitor backup circuitry while guaranteeing sub-45ns write commit for safety-critical state capture. |
Use Scenario: Buffering raw image frames from ultrasound transducers prior to GPU-based reconstruction. IC Role / Device Role / Timing Role: High-speed frame buffer with instant power-loss resilience for DICOM compliance. Use Value: Sustains 16-bit parallel throughput at 22.2 MB/s (45ns cycle) without DRAM refresh overhead or Flash latency penalties. |
| Smart Energy Meters | Industrial Ethernet Switches |
Use Scenario: Storing tariff schedules, tamper logs, and billing intervals across frequent mains interruptions. IC Role / Device Role / Timing Role: Primary non-volatile configuration and event log storage with guaranteed write integrity. Use Value: Achieves 10¹⁴ endurance - supports >100 years of daily 100-write cycles without degradation. |
Use Scenario: Storing MAC address tables, port configurations, and firmware patches in DIN-rail mounted switches. IC Role / Device Role / Timing Role: Fast-access configuration memory enabling sub-second reboot after power restoration. Use Value: Delivers 45ns deterministic access - reduces boot time by 3× vs. SPI Flash-based alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B104N-45ZXC | 4Mbit nvSRAM with 45ns access; requires external capacitor for write-back; 2.7–3.6V | Capacitor dependency adds board area and reliability risk in high-vibration environments | Select when legacy nvSRAM footprint compatibility is mandatory and capacitor management is feasible |
| Infineon F-RAM FM24V04 | 4Mbit parallel FRAM; 45ns access; unlimited endurance but 85°C max operating temp | Limited to industrial (not industrial-plus) temperature range; lower magnetic immunity (10,000 A/m) | Select for cost-sensitive 85°C-only applications where magnetic noise is absent |
Compared with CY14B104N-45ZXC and FM24V04, M3004316045NX0PTBY eliminates external energy storage, extends temperature range to +105°C, and doubles magnetic immunity - making it the only drop-in-capable solution for next-generation industrial edge nodes requiring zero-compromise non-volatility.
Availability
M3004316045NX0PTBY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, smart energy meters, and industrial Ethernet switches requiring stable component supply across extended temperature and high-reliability lifecycles.
Supply support for M3004316045NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3004316045NX0PTBY belongs to Renesas' Parallel MRAM family, designed specifically to replace battery-backed SRAM and slow Flash in mission-critical industrial systems demanding instant-write non-volatility and extreme environmental resilience.
FAQ
What is the maximum operating temperature for M3004316045NX0PTBY?
M3004316045NX0PTBY is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. The device maintains full 45ns timing and 10¹⁴ endurance within this range, making M3004316045NX0PTBY suitable for sealed enclosures in high-ambient environments like motor control cabinets or outdoor utility gear.
Does M3004316045NX0PTBY require an external capacitor or backup power source?
No, M3004316045NX0PTBY does not require any external capacitor, battery, or backup power source. Its STT-MRAM technology stores data magnetically, ensuring instantaneous non-volatility on power loss. Unlike nvSRAM (e.g., Cypress CY14B104N), M3004316045NX0PTBY guarantees write completion and data retention without auxiliary energy storage - a key differentiator confirmed in the General Description section (Page 4) of the Renesas datasheet.
What package type is used for M3004316045NX0PTBY?
M3004316045NX0PTBY uses a 54-pin TSOP package (10mm × 22mm), as specified in the Ordering Options table (Page 5) and Package Options section (Page 9) of the Renesas datasheet. This variant supports densities from 4Mb to 16Mb and is distinct from the 44-pin TSOP (4Mb only) and 48-ball FBGA (4–32Mb) variants. Pin assignments match the 54-pin TSOP top-view diagram on Page 9.
How many write cycles can M3004316045NX0PTBY endure?
M3004316045NX0PTBY guarantees a minimum of 10¹⁴ write cycles, as documented in Table 16 (Endurance and Data Retention) of the Renesas datasheet. This endurance level is intrinsic to its 40nm pMTJ STT-MRAM cell structure and remains valid across the full −40°C to +105°C operating range. No wear leveling or firmware intervention is needed - M3004316045NX0PTBY sustains this spec under worst-case thermal and voltage conditions.
Is M3004316045NX0PTBY pin-compatible with standard 4Mbit parallel SRAMs?
M3004316045NX0PTBY uses industry-standard parallel x16 control signals (E#, G#, W#, UB#, LB#, ADDR[17:0], DQ[15:0]) and matches common 4Mbit SRAM pinouts in 54-pin TSOP, enabling direct PCB replacement in many cases. However, voltage thresholds (VIH/VIL), timing margins (e.g., tWHAX = 12ns), and power-up sequencing (E#/W#/G# must follow VCC) differ - full validation against the M3004316045NX0PTBY datasheet is required before drop-in use.
M3004316045NX0PTBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3004316045NX0PTBY FAQ
1.How can I place an order for M3004316045NX0PTBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3004316045NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3004316045NX0PTBY reliable?
The price and inventory of M3004316045NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3004316045NX0PTBY is usually 5 days.
3.What payment methods are accepted for M3004316045NX0PTBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3004316045NX0PTBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3004316045NX0PTBY?
M3004316045NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3004316045NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3004316045NX0PTBY?
For technical support, including M3004316045NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3004316045NX0PTBY requirements.
6.How does Aetrix verify that M3004316045NX0PTBY is sourced from the original manufacturer or authorized distributors?
All M3004316045NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3004316045NX0PTBY meets industry standards.
7.What is the process for return or replacement of M3004316045NX0PTBY?
All M3004316045NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3004316045NX0PTBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3004316045NX0PTBY part is unused and in its original packaging.
Return procedure for M3004316045NX0PTBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3004316045NX0PTBY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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