Renesas M30082040054X0ISAR

Overview

M30082040054X0ISAR from Renesas is a 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 1.71–2.0V or 2.7–3.6V supply, industrial temperature range (−40°C to +85°C), and 8-pin SOIC package. It delivers SRAM-compatible read/write timing with non-volatility, enabling persistent data storage in real-time control systems.

For engineers reviewing the M30082040054X0ISAR datasheet, M30082040054X0ISAR pinout, M30082040054X0ISAR application, or M30082040054X0ISAR equivalent, key selection criteria include DDR/SDR QSPI timing at 54MHz, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and industrial-grade thermal reliability.

Technical Context

The M30082040054X0ISAR implements a 40nm pMTJ STT-MRAM cell architecture with true random access, zero write latency penalty, and no wear leveling required. Its SPI controller supports QPI (4-4-4), DPI, and legacy SPI modes with configurable clock polarity/phase (Mode 0 or Mode 3).

It integrates dual power domains (1.8V/3.0V), hardware write protect (WP#), status register-based block protection (BP[2:0]), and two low-power states-Deep Power Down (IDPD = 10µA typical) and Hibernate (IHBN = 25µA)-with full configuration retention and sub-1µs wake-up.

Key Specifications

Pinout & Package

8-pin SOIC (5.2mm × 5.2mm) package with standard JEDEC MS-012AC footprint and gull-wing leads. Compatible with reflow soldering and automated optical inspection (AOI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and W25Q80DVSSIG, the M30082040054X0ISAR provides broader voltage support, higher interface bandwidth in QPI mode, superior endurance, and integrated hardware/software protection-making it optimal for high-reliability industrial firmware and configuration storage.

Availability

M30082040054X0ISAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH compliance.

Supply support for M30082040054X0ISAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family was designed as Persistent SRAM (P-SRAM) replacements-delivering SRAM-like performance with Flash-like non-volatility for mission-critical data logging and firmware storage in harsh environments.

FAQ

What is the operating voltage range supported by the M30082040054X0ISAR?

The M30082040054X0ISAR supports two independent supply ranges: 1.71V to 2.00V (1.8V nominal) and 2.70V to 3.60V (3.0V nominal). Both ranges are fully specified across the industrial temperature range (−40°C to +85°C), and the device automatically adapts internal biasing-no external configuration is needed to switch between rails. This dual-voltage capability allows direct integration into mixed-signal systems without level-shifting circuitry.

Does the M30082040054X0ISAR support Quad SPI (QPI) mode, and what are its timing characteristics?

Yes, the M30082040054X0ISAR supports full Quad SPI (QPI) mode with 4-4-4 command-address-data transfer. In Double Data Rate (DDR) QPI mode, it achieves 54MHz clock frequency with 108MT/s effective throughput. All QPI instructions use both clock edges for data capture, and the device complies with JEDEC JESD252 for standardized reset and identification sequences-ensuring interoperability with modern MCU SPI controllers.

How does the Augmented Storage Array in the M30082040054X0ISAR differ from main memory, and how is it protected?

The M30082040054X0ISAR includes a dedicated 256-byte Augmented Storage Array physically separate from the 8Mb main MRAM array. It is divided into eight 32-byte sections, each independently programmable and write-protectable via status register bits. Protection can be set per-section using hardware WP# or software BP bits-enabling secure storage of calibration data, serial numbers, or cryptographic keys without risking corruption of operational memory.

What low-power states does the M30082040054X0ISAR support, and how quickly can it resume operation?

The M30082040054X0ISAR supports two ultra-low-power states: Deep Power Down (IDPD ≤ 10µA) and Hibernate (IHBN ≤ 25µA). Both retain full memory content and register configuration. Exit latency is ≤ 400µs for Deep Power Down and ≤ 450µs for Hibernate-verified across temperature and voltage corners. No reinitialization or register reload is required upon wake-up, preserving deterministic system response.

Is the M30082040054X0ISAR pin-compatible with standard SPI NOR Flash devices in SOIC-8 packages?

Yes, the M30082040054X0ISAR uses a standard 8-pin SOIC (MS-012AC) footprint identical to common SPI NOR Flash devices such as Winbond W25Q80DV and Macronix MX25L8006E. Pin assignments (CS#, WP#, SI, CLK, IO[3], SO, VCC, VSS) match JEDEC MO-012 pinout conventions. However, functional compatibility requires verifying host SPI controller support for QPI mode and MRAM-specific commands (e.g., Enter/Exit Hibernate).