Renesas M30082040054X0IWAR

Overview

M30082040054X0IWAR from Renesas is an 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) memory device with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers persistent SRAM-equivalent read/write performance with non-volatility, used in real-time data logging and firmware storage for industrial controllers.

For engineers reviewing the M30082040054X0IWAR datasheet, M30082040054X0IWAR pinout, M30082040054X0IWAR application, or M30082040054X0IWAR equivalent, key selection criteria include its dual-voltage support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and QSPI x4 interface timing at 54MHz DDR.

Technical Context

This MRAM implements a 40nm pMTJ STT-MRAM cell array with true random access, enabling byte-level reads/writes without erase cycles. Its command architecture supports SPI modes 0 and 3, with configurable instruction formats (1-1-1 through 4-4-4) and eXecute-In-Place (XIP) mode to reduce command overhead during burst operations.

The device integrates dual power domains (1.8V/3.0V), hardware write protection via WP# pin, software-configurable block protection (BP[2:0]), top/bottom memory locking, and two low-power states-Deep Power Down (IDPD) and Hibernate-with full configuration retention and sub-µs wake-up latency.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm footprint, wettable flank leads, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V05 and CY14B108N, M30082040054X0IWAR provides higher density, QSPI DDR bandwidth, dual-voltage support, and infinite endurance-making it optimal for next-generation industrial firmware and real-time data buffers where longevity and speed are co-critical.

Availability

M30082040054X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30082040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader focused on microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

M30082040054X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy EEPROM/Flash in applications demanding instant-write non-volatility, high endurance, and deterministic latency.

FAQ

What voltage ranges does the M30082040054X0IWAR support?

M30082040054X0IWAR supports two independent supply ranges: 1.71V to 2.00V for 1.8V systems and 2.70V to 3.60V for 3.3V systems. The device automatically adapts to the applied VCC level and requires no external voltage selection logic. This dual-voltage capability allows drop-in replacement across mixed-rail designs without board modification. The M30082040054X0IWAR datasheet specifies strict timing margins for both ranges, including tPU (250 µs) and tRVR (≤1000 µs at 1.8V).

Does the M30082040054X0IWAR support Quad SPI x4 mode?

Yes, the M30082040054X0IWAR fully supports Quad SPI (QPI) mode with 4-4-4 command-address-data format, using all four I/O pins (IO[0]–IO[3]) simultaneously for command, address, and data transfer. This mode enables maximum throughput at 54MHz DDR, delivering 432 Mbps effective bandwidth. The device also supports legacy SPI modes (1-1-1, 1-1-2, 1-4-4) and JEDEC-standard reset (66h), ensuring compatibility with existing SPI controllers and boot firmware stacks.

How is write protection implemented on the M30082040054X0IWAR?

M30082040054X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, enabled by SR[7]=1), and software-based via configuration bits in the Status Register (BPSEL[2:0], TBSEL, SNPEN). Hardware protection locks the status register when WP# is asserted; software protection allows granular locking of memory blocks (up to 1/2, 1/4, or 1/8 of array) and the 256-byte augmented storage array. Both schemes persist across power cycles and Deep Power Down states.

What is the purpose of the Augmented Storage Array in the M30082040054X0IWAR?

The Augmented Storage Array is a dedicated 256-byte memory region, physically separate from the main 8Mb array, divided into eight 32-byte programmable sections. Each section can be individually written and write-protected. It is designed for storing infrequently updated but mission-critical data-such as calibration constants, device serial numbers, or cryptographic keys-without consuming main array space or risking accidental overwrite during firmware updates. The M30082040054X0IWAR supports hardware and software lock-down of this region independent of main array protection settings.

Is the M30082040054X0IWAR compatible with standard SPI controllers?

Yes, the M30082040054X0IWAR is fully compatible with industry-standard SPI controllers supporting modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1). It operates in Single Data Rate (SDR) and Double Data Rate (DDR) modes, with clear timing definitions for setup/hold and clock-edge sampling per instruction type. All required commands-including Read, Write Enable, Write Status, and JEDEC Reset-are compliant with JEDEC JESD252 and JESD216 standards, ensuring seamless integration into existing SPI-based boot and configuration infrastructure.