Renesas M30082040054X0PSAR

Overview

M30082040054X0PSAR from Renesas is a 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 8-pin SOIC package. It delivers SRAM-compatible read/write latency with persistent data retention, enabling real-time logging in factory automation controllers.

For engineers reviewing the M30082040054X0PSAR datasheet, M30082040054X0PSAR pinout, M30082040054X0PSAR application, or M30082040054X0PSAR equivalent, key selection considerations include its 54MHz DDR QSPI timing, hardware/software write protection, 256-byte augmented storage array, and support for deep power-down and hibernate modes in harsh thermal environments.

Technical Context

The M30082040054X0PSAR implements a 40nm pMTJ STT-MRAM cell architecture with true random access, enabling byte-level writes without erase cycles. Its QSPI interface supports 1-4-4 command-address-data configuration and executes instructions on both clock edges in DDR mode.

It integrates dual protection mechanisms: hardware-based via WP# pin and software-configurable block protection through status register bits BPSEL[2:0] and TBSEL. The device also features an isolated 256-byte augmented storage array with per-section write protection and JEDEC-compliant reset functionality.

Key Specifications

Pinout & Package

8-pin SOIC (5.2mm × 5.2mm), RoHS-compliant, surface-mount package with standard footprint compatibility for legacy SPI flash and EEPROM replacements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, the M30082040054X0PSAR provides higher interface bandwidth (54MHz DDR QSPI), extended temperature operation (105°C), and lower active/standby power-making it optimal for next-generation edge controllers requiring robustness and efficiency.

Availability

M30082040054X0PSAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30082040054X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family was designed as a drop-in persistent SRAM (P-SRAM) replacement-delivering MRAM's infinite endurance and instant write capability while maintaining SPI flash pinout and command compatibility.

FAQ

What is the maximum clock frequency supported by M30082040054X0PSAR in DDR mode?

The M30082040054X0PSAR supports 54MHz Double Data Rate (DDR) operation, yielding an effective interface bandwidth of 108Mbps. This is confirmed in the "Features" section of the datasheet under "Interface" specifications and validated in Table 3 (Interface Modes) and Table 4 (Clock Edge Usage). The part number suffix "0054" explicitly denotes the 54MHz DDR variant, distinguishing it from the 108MHz SDR version (0108).

Does M30082040054X0PSAR require external hardware for write protection?

No-M30082040054X0PSAR includes integrated hardware write protection via the WP# pin, which directly inhibits status register writes when asserted low and WP#EN bit is set. It also provides software-based protection through configurable bits (TBSEL, BPSEL[2:0]) in the status register. Both schemes operate independently and can be used concurrently to safeguard firmware and configuration data in the M30082040054X0PSAR.

What package type is used by M30082040054X0PSAR, and is it compatible with standard SOIC-8 footprints?

M30082040054X0PSAR uses an 8-pin SOIC package (5.2mm × 5.2mm), as indicated by the "SA" code in the ordering guide and confirmed in Figure 4 (8-Pin SOIC Top View) on page 9 of the datasheet. Its pinout and mechanical dimensions match JEDEC MS-012 standards, ensuring full footprint compatibility with legacy SPI flash, EEPROM, and nvSRAM devices in SOIC-8 sockets and PCB layouts.

Can M30082040054X0PSAR retain data during deep power-down mode?

Yes-M30082040054X0PSAR retains all stored data and register configurations during Deep Power Down (EDP command B9h) and Hibernate (EHBN command BAh) modes. The datasheet confirms non-volatility is maintained in both low-power states, with typical IDPD current ≤2µA and IHBN current ≤10µA. Data integrity is guaranteed across the full −40°C to +105°C operating range without refresh or backup power.

What is the purpose of the Augmented Storage Array in M30082040054X0PSAR?

The Augmented Storage Array in M30082040054X0PSAR is a dedicated 256-byte memory region segmented into eight 32-byte sections, each individually programmable and write-protectable. It is intended for storing critical, infrequently modified data such as calibration coefficients, security keys, or device-specific identifiers-separate from the main 8Mb array. This isolation prevents accidental overwrite during firmware updates and enables selective protection without locking the entire memory space.