Renesas M30082040054X0PSAY

Overview

M30082040054X0PSAY from Renesas is a 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 1.71–2.0V or 2.7–3.6V supply, -40°C to +105°C industrial-plus temperature range, and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power - deployed in real-time industrial control logging and medical diagnostics firmware storage.

For engineers reviewing the M30082040054X0PSAY datasheet, M30082040054X0PSAY pinout, M30082040054X0PSAY application, or M30082040054X0PSAY equivalent, key selection criteria include DDR/SDR QSPI mode support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and deep power-down exit time under 400 µs.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology enabling true random access with no erase cycles, infinite endurance (>10¹⁵ cycles), and 20-year data retention at 105°C. Its command-address-data nomenclature supports flexible SPI modes including 1-4-4 QPI and 4-4-4 QPI, all operating at 54MHz DDR or 108MHz SDR clock rates.

The device integrates dual power domains (1.8V/3.0V), on-chip voltage regulation, and independent 256-byte augmented storage array with per-section write protection. It supports eXecute-In-Place (XIP) to eliminate command overhead during burst reads and implements two low-power states - Deep Power Down (IDPD) and Hibernate (IHBN) - with full configuration retention and sub-5 µs entry/exit times.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0 mm × 6.0 mm, exposed pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, M30082040054X0PSAY uniquely combines 54MHz DDR QPI, dual-voltage operation, 256-byte protected augmented storage, and battery-free 20-year retention - making it optimal for new industrial designs requiring high-speed, maintenance-free non-volatility.

Availability

M30082040054X0PSAY is available at Aetrix Electronics and suitable for factory automation logging, medical diagnostic firmware storage, and industrial router configuration requiring stable component supply across extended temperature and long product lifecycles.

Supply support for M30082040054X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

M30082040054X0PSAY belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered specifically to replace NOR flash and battery-backed SRAM in mission-critical industrial and medical systems demanding zero-latency writes, infinite endurance, and guaranteed data retention without auxiliary power.

FAQ

What voltage ranges does the M30082040054X0PSAY support?

M30082040054X0PSAY supports two independent supply ranges: 1.71V to 2.00V (1.8V nominal) and 2.70V to 3.60V (3.0V nominal). The device automatically adapts to the applied VCC level and meets all AC/DC specifications across both ranges without external configuration. This dual-voltage capability allows direct drop-in replacement of legacy 1.8V or 3.3V SPI memories in existing designs.

Does the M30082040054X0PSAY require an external backup power source?

No, M30082040054X0PSAY is a true non-volatile memory with no backup power requirement. Its STT-MRAM technology retains data indefinitely at temperatures up to +105°C without capacitors, batteries, or supercapacitors. The 20-year retention specification is validated under worst-case thermal stress conditions, eliminating design complexity associated with energy-harvesting or battery-management circuits.

How does the augmented storage array in M30082040054X0PSAY differ from main memory?

The M30082040054X0PSAY augmented storage array is a dedicated 256-byte region physically separate from the 8Mb main MRAM array. It is subdivided into eight 32-byte sections, each individually programmable and write-protectable via configuration registers. Unlike main memory, this area is optimized for infrequent, high-reliability storage of calibration data, serial numbers, or security keys - with hardened protection against accidental overwrite.

What SPI interface modes does M30082040054X0PSAY support?

M30082040054X0PSAY supports full Quad SPI (QPI) operation including 1-4-4 and 4-4-4 modes, plus Dual SPI (DPI) and standard Single SPI (1-1-1). It operates in both Single Data Rate (up to 108MHz) and Double Data Rate (up to 54MHz) configurations. Clock polarity and phase settings (SPI Mode 0 and Mode 3) are fully compliant with JEDEC JESD251 standards for interoperability with common host controllers.

Is the M30082040054X0PSAY pin-compatible with other devices in the Mxxxx204 family?

Yes, M30082040054X0PSAY shares identical pinout, package dimensions, and signal assignments with all Mxxxx204 variants - including M1004204, M3016204, and all 4Mb/8Mb/16Mb densities in both WA (DFN) and SA (SOIC) packages. This enables seamless density and speed upgrades on the same PCB layout, provided voltage and timing constraints are met.