Renesas M30082040054X0PWAR

Overview

M30082040054X0PWAR from Renesas is a 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It delivers persistent SRAM-equivalent read/write performance with non-volatility, used in real-time data logging and firmware storage for industrial controllers.

For engineers reviewing the M30082040054X0PWAR datasheet, M30082040054X0PWAR pinout, M30082040054X0PWAR application, or M30082040054X0PWAR equivalent, key selection criteria include its dual-voltage support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and QSPI x4 interface mode compatibility with existing SPI-based microcontroller designs.

Technical Context

This MRAM uses 40nm pMTJ STT technology enabling true random access with SRAM-compatible timing and infinite endurance. Its architecture supports Execute-In-Place (XIP), reducing command overhead during sequential reads and writes.

The device implements both hardware-based write protection via WP# pin and software-configurable block protection through status and configuration registers. It supports Deep Power Down and Hibernate low-power modes while retaining full data integrity and register state across power cycles.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, moisture sensitivity level (MSL) 3, lead-free and RoHS/REACH compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V05 and CY14B108N, M30082040054X0PWAR uniquely combines QSPI DDR bandwidth, industrial-plus temperature rating, augmented storage, and true MRAM endurance-making it optimal for next-generation edge controllers and medical devices demanding both speed and reliability.

Availability

M30082040054X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30082040054X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements-delivering MRAM's non-volatility and endurance while maintaining SRAM-like timing and SPI compatibility for seamless migration from volatile memory architectures.

FAQ

What is the primary memory technology used in M30082040054X0PWAR?

M30082040054X0PWAR uses spin-transfer torque magnetoresistive RAM (STT-MRAM) built on 40nm pMTJ process. This technology provides true non-volatility with SRAM-compatible read/write timing, virtually unlimited endurance (>10¹⁵ cycles), and 20+ year data retention at 105°C-making it fundamentally distinct from Flash, EEPROM, or FRAM. The M30082040054X0PWAR leverages this for deterministic, low-latency, high-reliability storage in mission-critical systems.

Does M30082040054X0PWAR support both 1.8V and 3.3V operation?

Yes, M30082040054X0PWAR supports two independent supply ranges: 1.71 V – 2.00 V and 2.70 V – 3.60 V. It automatically adapts internal regulation and timing to the applied VCC level-no external configuration or voltage translation is required. This dual-voltage capability is verified per datasheet Tables 6 and 7 and enables direct use in both modern 1.8V microcontroller platforms and legacy 3.3V industrial designs.

What package type is used for M30082040054X0PWAR?

M30082040054X0PWAR is packaged in an 8-pad DFN (WSON) measuring 5.0 mm × 6.0 mm. This RoHS-compliant, lead-free package features exposed thermal pad and is rated MSL-3. Pinout matches industry-standard SOIC-8 footprints for layout compatibility, though solder reflow profiles must follow WSON-specific guidelines outlined in the Renesas packaging documentation for M30082040054X0PWAR.

How does the Augmented Storage Array in M30082040054X0PWAR differ from main memory?

The Augmented Storage Array in M30082040054X0PWAR is a dedicated 256-byte region divided into eight 32-byte sections, each independently programmable and write-protectable via configuration registers. Unlike the main 8Mb array, this region is optimized for infrequently updated critical data-such as calibration constants, cryptographic keys, or device serial numbers-and retains separate protection controls. Its address space (000000h–0000FFh) is fixed and isolated from main memory mapping.

Is M30082040054X0PWAR pin-compatible with other members of the Mxxxx204 family?

Yes, all Mxxxx204 variants-including M30082040054X0PWAR-share identical 8-pin SOIC and 8-pad DFN packages and pin assignments. Pin functions (CS#, CLK, IO[0]–IO[3], VCC, VSS) are fully consistent across densities (4Mb/8Mb/16Mb), speeds (54MHz/108MHz), and voltage grades. This allows drop-in replacement within the same package type, provided timing and configuration settings (e.g., DDR vs SDR mode) are validated per the target application's MCU interface requirements.