Renesas M30082040108X0ISAR

Overview

M30082040108X0ISAR from Renesas is an 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V supply, and industrial temperature range (−40°C to +85°C). It delivers SRAM-compatible read/write timing with true non-volatility, enabling persistent data storage in real-time control systems without write latency penalties.

For engineers reviewing the M30082040108X0ISAR datasheet, M30082040108X0ISAR pinout, M30082040108X0ISAR application, or M30082040108X0ISAR equivalent, key selection criteria include its 8Mb density, 8-pad DFN (WSON) package, hardware/software write protection, 256-byte augmented storage array, and support for XIP (eXecute-In-Place) to reduce command overhead in deterministic embedded firmware.

Technical Context

The M30082040108X0ISAR implements a 40nm pMTJ STT-MRAM cell architecture, enabling virtually unlimited endurance (>10¹⁵ cycles) and 20-year data retention at 85°C. Its QSPI interface supports 1-4-4 command-address-data nomenclature and operates in SPI Mode 0 (CPOL=0, CPHA=0) for both SDR and DDR modes.

It integrates dual power states-Deep Power Down (IDPD, 3µs entry, 400µs exit) and Hibernate (IHBN, 3µs entry, 450µs exit)-with full configuration retention. The device features a dedicated 256-byte Augmented Storage Array segmented into eight 32-byte programmable/protectable sections, independent of main memory addressing.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, moisture sensitivity level (MSL) 3, lead-free and RoHS/REACH compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MRAM memory applications.

Compared with CY14B108L-ZSP25XI, M30082040108X0ISAR reduces PCB area by 60% and supports modern low-voltage microcontrollers; versus MR25H80DFM, it offers identical performance but differs in augmented storage initialization and JEDEC reset behavior-requiring validation of boot-time register configuration.

Availability

M30082040108X0ISAR is available at Aetrix Electronics and suitable for factory automation, multifunction printers, and industrial control systems requiring stable component supply with guaranteed long-term availability and no obsolescence risk.

Supply support for M30082040108X0ISAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The M30082040108X0ISAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, designed specifically to replace battery-backed SRAM and serial Flash in mission-critical industrial and medical systems demanding zero-latency non-volatility.

FAQ

What is the operating voltage range for M30082040108X0ISAR?

M30082040108X0ISAR operates from 1.71V to 2.00V. This narrow 1.8V nominal range ensures compatibility with modern ultra-low-power microcontrollers and eliminates need for level-shifting circuitry. Operation outside this range may cause undefined behavior or data corruption. The device does not support 3.3V operation - that variant is designated with suffix '3' (e.g., M30082040108X0ISAR3).

Does M30082040108X0ISAR support Double Data Rate (DDR) mode?

No, M30082040108X0ISAR does not support DDR mode. Its ordering code '0108' specifies Single Data Rate (SDR) operation at up to 108MHz, using rising-edge clock latching for commands and addresses, and falling-edge sampling for data output. DDR capability is reserved for parts with '0054' in the ordering string (e.g., M30082040054X0ISAR).

How is write protection implemented on M30082040108X0ISAR?

M30082040108X0ISAR implements dual-layer write protection: hardware-based via the WP# pin (enabled by Status Register bit SR[7]), and software-based via Block Protect bits BPSEL[2:0] and Top/Bottom select TBSEL in the same register. Both mechanisms can be used simultaneously to safeguard specific memory regions or the entire array, including the 256-byte Augmented Storage Array.

What is the purpose of the Augmented Storage Array in M30082040108X0ISAR?

The Augmented Storage Array is a dedicated 256-byte memory region divided into eight 32-byte sections, each independently programmable and write-protectable. It is used for storing critical firmware parameters, calibration data, or security keys separate from main memory - ensuring these values remain intact even during bulk erase or firmware updates targeting the primary 8Mb array.

Is M30082040108X0ISAR pin-compatible with other members of the Mxxxx204 family?

Yes, M30082040108X0ISAR shares identical 8-pad DFN (WSON) pinout and signal assignment with all Mxxxx204 variants - including M1004204, M3016204, and temperature/package variants. However, density, speed grade, and voltage grade differences require verification of timing parameters and register initialization sequences before substitution.