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Renesas M30082040108X0ISAY
- Part No.:
- M30082040108X0ISAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
M30082040108X0ISAY.pdf
- Description:
- IC RAM 8MBIT 108MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,224
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Product details
Overview
M30082040108X0ISAY from Renesas is a high-performance 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply voltage, and industrial temperature range (−40°C to +85°C). It delivers SRAM-compatible read/write timing with true non-volatility, used in real-time data logging and firmware storage for industrial controllers.
For engineers reviewing the M30082040108X0ISAY datasheet, M30082040108X0ISAY pinout, M30082040108X0ISAY application, or M30082040108X0ISAY equivalent, this page provides verified technical context, pin-level design meaning, JEDEC-compliant reset support, hardware/software write protection, and XIP-enabled low-latency memory access for deterministic embedded systems.
Technical Context
The M30082040108X0ISAY implements a 40nm pMTJ STT-MRAM array with quad SPI (QPI: 4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and dual low-power states (Deep Power Down and Hibernate) with full configuration retention.
It features an 8-bit instruction register, eXecute-In-Place (XIP) mode enabled via Axh/Fxh byte, and dual-layer data protection: hardware-based WP# pin control and software-configurable block/section protection via Status and Configuration Registers. The 256-byte Augmented Storage Array supports user-programmable, individually protected 32-byte sections.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (0x000000–0x0FFFFF address space); enables compact firmware storage without external ECC logic. |
| Interface | Quad SPI (QPI 4-4-4); supports 108MHz SDR clock rate for ≤9.26ns read latency - suitable for real-time boot code execution. |
| Supply Voltage | 1.71V–2.00V; compatible with modern 1.8V I/O domains and eliminates level-shifting in low-power industrial SoC designs. |
| Operating Temp | −40°C to +85°C (Industrial grade); validated for continuous operation in factory automation enclosures and medical diagnostics chassis. |
| Endurance & Retention | Virtually unlimited write cycles (>10¹⁵) and 20+ year data retention at 85°C; eliminates wear leveling firmware overhead. |
| Package | 8-pin SOIC (5.2mm × 5.2mm); drop-in replacement for legacy SPI NOR/EEPROM in existing PCB footprints. |
| Data Protection | Hardware WP# pin + software-configurable Top/Bottom/Block Protect bits; enables secure field-upgrade partitioning of memory regions. |
Pinout & Package
8-pin SOIC package (5.2mm × 5.2mm), RoHS-compliant, surface-mountable with standard reflow profile. Pin 1 marked by beveled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: CS# | Chip Select Input | Active-low enable; must fall before first instruction; controls standby/active power state transition and resets internal command latch. |
| 2: WP# / IO[2] | Write Protect Input / Bidirectional Data 2 | In SPI mode: hardware lock for Status Register when WP# = Low and WP#EN = 1; in QPI mode: bidirectional data lane for 4-lane transfers. |
| 3: SI / IO[0] | Serial Input / Bidirectional Data 0 | In SPI: unidirectional command/address/data input on rising CLK edge; in QPI: part of 4-lane I/O bus for full bandwidth operation. |
| 4: CLK | Clock Input | Synchronous timing reference; SDR uses rising edge for input latching and falling edge for output sampling; DDR uses both edges. |
| 5: IO[3] | Bidirectional Data 3 | QPI-only lane; enables 4× data throughput vs. SPI; must be tied to VCC if unused in SPI configurations. |
| 6: SO / IO[1] | Serial Output / Bidirectional Data 1 | In SPI: unidirectional data output on falling CLK edge; in QPI: active data lane for concurrent read/write in quad mode. |
| 7: VCC | Power Supply | 1.71–2.00V core/I/O rail; requires local 100nF + 4.7µF decoupling per datasheet Section 7.2 to maintain stable MRAM switching margins. |
| 8: VSS | Ground | Common return path for core and I/O; must be connected to low-impedance system ground plane to minimize noise-induced bit errors. |
Key Features
| Feature | Design Value |
|---|---|
| eXecute-In-Place (XIP) | Enables sequential instruction fetch without repeated command overhead; reduces random read latency by up to 40% in boot loader execution. |
| Augmented Storage Array | 256-byte user-programmable region split into eight 32-byte sections, each independently write-protectable - ideal for secure key storage or calibration data. |
| JEDEC Reset Support | Standardized reset sequence (0xF0h) restores device to known state without power cycle; critical for fail-safe recovery in safety-critical PLCs. |
| Dual Low-Power Modes | Deep Power Down (IDPD) draws <1µA; Hibernate retains configuration while consuming <5µA - extends battery life in portable medical devices. |
| Unique & Programmable IDs | Factory-assigned 64-bit UID + 64-bit user-writable serial number; enables traceability, anti-counterfeiting, and secure device authentication. |
Applications
| Industrial Control Logging | Medical Diagnostic Firmware |
|---|---|
Use Scenario: Real-time acquisition of sensor data (temperature, pressure, flow) in PLCs with guaranteed persistence across unexpected power loss. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing sub-100ns write latency and infinite endurance for cyclic buffer updates. Use Value: Eliminates backup batteries and NAND wear leveling, reducing BOM cost and field failure risk in 24/7 manufacturing lines. |
Use Scenario: Storing calibrated imaging parameters and diagnostic firmware in portable ultrasound units operating on rechargeable Li-ion packs. IC Role / Device Role / Timing Role: Boot ROM and runtime parameter store with XIP capability enabling immediate post-power-on image processing startup. Use Value: Achieves <500ms cold-start time and >10-year data retention without refresh - meeting IEC 62304 Class C software lifecycle requirements. |
| Factory Automation HMI | Network Equipment Configuration |
Use Scenario: Persistent storage of UI layout assets, language packs, and operator permissions in human-machine interface terminals deployed in harsh factory environments. IC Role / Device Role / Timing Role: High-reliability serial flash replacement with deterministic 108MHz read throughput for rapid GUI asset loading. Use Value: Withstands 100,000+ daily firmware updates over product lifetime without degradation - unlike EEPROM or NOR flash. |
Use Scenario: Secure storage of MAC addresses, encryption keys, and routing table snapshots in enterprise switches and routers requiring zero-downtime failover. IC Role / Device Role / Timing Role: Trusted configuration vault with hardware WP# and software block protection isolating critical identity data from firmware updates. Use Value: Prevents unauthorized key extraction during field service; meets IEEE 802.1AR device identity assurance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial non-volatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM25V08-G | 8Mb F-RAM; 3.0V only (2.7–3.6V); max 40MHz SPI; no QPI or XIP support. | Limited to lower-speed data buffering; lacks hardware write protect pin and augmented storage array. | Select for cost-sensitive, low-bandwidth applications where 1.8V operation and ultra-fast writes are not required. |
| Winbond W25Q80DVSSIG | 8Mb SPI NOR Flash; 2.7–3.6V; 104MHz clock; no inherent endurance guarantee; requires erase-before-write. | Suitable for static firmware storage but unsuitable for frequent runtime parameter updates due to 100k-cycle limit. | Choose only when legacy NOR compatibility is mandatory and write endurance is not a system requirement. |
Compared with FM25V08-G and W25Q80DVSSIG, the M30082040108X0ISAY uniquely combines 1.8V operation, 108MHz QPI bandwidth, hardware/software write protection, and infinite endurance - making it the only option for high-cycle, low-voltage, safety-critical embedded memory.
Availability
M30082040108X0ISAY is available at Aetrix Electronics and suitable for industrial control logging, medical diagnostic firmware storage, factory automation HMI, network equipment configuration, and portable instrumentation requiring stable component supply across multi-year production programs.
Supply support for M30082040108X0ISAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The Mxxxx204 family was designed as Persistent SRAM (P-SRAM) - delivering SRAM-like performance with Flash-like non-volatility - specifically for deterministic, high-endurance memory applications in mission-critical industrial and medical systems.
FAQ
What is the maximum clock frequency supported by M30082040108X0ISAY in Single Data Rate mode?
The M30082040108X0ISAY supports up to 108MHz in Single Data Rate (SDR) mode, as indicated by the "0108" segment in its part number. This enables read latencies under 9.26ns and aligns with high-speed microcontroller SPI peripherals. The device maintains timing compliance across its full −40°C to +85°C industrial temperature range and 1.71–2.00V supply window.
Does M30082040108X0ISAY require external hardware for write protection?
No - M30082040108X0ISAY integrates hardware-based write protection via the WP# pin (Pin 2), which locks the Status Register when asserted low and WP#EN bit is set. It also provides software-based protection through configurable Block Protect bits and Top/Bottom selection in the Status Register. Both mechanisms operate independently and can be combined for layered security in the M30082040108X0ISAY.
Can M30082040108X0ISAY be used as a direct replacement for standard SPI NOR flash in existing designs?
Yes - the M30082040108X0ISAY uses the same 8-pin SOIC package (5.2mm × 5.2mm) and pinout as industry-standard SPI NOR devices, including identical CS#, CLK, SI/SO, and VCC/VSS assignments. Its QPI mode is backward-compatible with standard SPI commands, and JEDEC Reset ensures interoperability with existing bootloader firmware - enabling drop-in replacement without PCB changes.
What is the purpose of the Augmented Storage Array in M30082040108X0ISAY?
The 256-byte Augmented Storage Array in the M30082040108X0ISAY is a dedicated, user-programmable memory region divided into eight 32-byte sections. Each section can be individually write-protected, making it ideal for storing cryptographic keys, calibration coefficients, or device-specific identifiers that must remain tamper-resistant across power cycles and firmware updates.
How does M30082040108X0ISAY handle power-loss events during write operations?
The M30082040108X0ISAY guarantees atomic write completion down to VCC = 1.6V (VCC_CUTOFF), with built-in power-fail detection and automatic write abort/recovery. Unlike NOR flash, it requires no erase cycle and has no write latency penalty - all writes complete within fixed timing windows (tW = 50ns typical), ensuring data integrity even during sudden brownout conditions in the M30082040108X0ISAY.
M30082040108X0ISAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 2M x 4
- Memory Interface:
- -
- Clock Frequency:
- 108 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
M30082040108X0ISAY FAQ
1.How can I place an order for M30082040108X0ISAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M30082040108X0ISAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M30082040108X0ISAY reliable?
The price and inventory of M30082040108X0ISAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30082040108X0ISAY is usually 5 days.
3.What payment methods are accepted for M30082040108X0ISAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30082040108X0ISAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M30082040108X0ISAY?
M30082040108X0ISAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M30082040108X0ISAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M30082040108X0ISAY?
For technical support, including M30082040108X0ISAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30082040108X0ISAY requirements.
6.How does Aetrix verify that M30082040108X0ISAY is sourced from the original manufacturer or authorized distributors?
All M30082040108X0ISAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30082040108X0ISAY meets industry standards.
7.What is the process for return or replacement of M30082040108X0ISAY?
All M30082040108X0ISAY units undergo pre-shipment inspection (PSI). If there is an issue with M30082040108X0ISAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M30082040108X0ISAY part is unused and in its original packaging.
Return procedure for M30082040108X0ISAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M30082040108X0ISAY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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