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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M30082040108X0IWAR

Name: M30082040108X0IWAR
Brand: Renesas
SKU: M30082040108X0IWAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M30082040108X0IWAR

Manufacturer:: Renesas

Category:: Memory

Package:: 8-WDFN Exposed Pad

Datasheet:: M30082040108X0IWAR.pdf

Description:: IC RAM 8MBIT 108MHZ 8DFN

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Product details

Overview

M30082040108X0IWAR from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing with persistent data retention, enabling real-time logging in factory automation controllers.

For engineers reviewing the M30082040108X0IWAR datasheet, M30082040108X0IWAR pinout, M30082040108X0IWAR application, or M30082040108X0IWAR equivalent, key selection considerations include its 108MHz SDR QSPI speed, hardware/software write protection, 256-byte augmented storage array, eXecute-In-Place capability, and support for Deep Power Down and Hibernate low-power states.

Technical Context

The M30082040108X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with QSPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, dual power domains (1.8V core/I/O), and independent 256-byte augmented storage with per-section write protection.

It features hardware-based write protection via WP# pin and software-based protection through configurable status and block protect bits. The device supports JEDEC Reset, executes XIP mode to eliminate per-access command overhead, and maintains full configuration state across Deep Power Down and Hibernate modes without data loss.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	8Mbit - supports 1MB of byte-addressable non-volatile storage with no wear leveling required
Interface	QSPI (4-4-4) - enables 4-line simultaneous address/data transfer for high throughput at 108MHz SDR
Operating Voltage	1.71V–2.00V - compatible with modern low-voltage industrial microcontrollers and FPGAs
Temperature Range	−40°C to +85°C - qualified for industrial control and factory automation environments
Endurance & Retention	Virtually unlimited - >10¹⁵ write cycles and >20-year data retention at 85°C per manufacturer spec
Package	8-pad DFN (WSON), 5.0mm × 6.0mm - surface-mount footprint compatible with SOIC-8 PCB layouts
Power Modes	Deep Power Down (IDPD ≤ 2µA) and Hibernate (IHBN ≤ 15µA) - preserves configuration and data during system sleep

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm body, 0.5mm pitch, wettable flank leads. RoHS & REACH compliant.

Pin/Terminal	Circuit Role	Design Meaning
CS#	Chip Select Input	Active-low enable signal; falling edge initiates instruction sequence; high puts device in standby (tri-state I/O)
WP# / IO[2]	Bidirectional I/O / Hardware Write Protect	In SPI mode: hardware lock for status register when pulled low and WP#EN=1; in QPI mode: bidirectional data line
SI / IO[0]	Input / Bidirectional Data 0	Serial input in SDR SPI; bidirectional data lane 0 in Dual/Quad modes; must be driven in all configurations
CLK	Serial Clock Input	Synchronous timing reference; rising edge latches commands in SDR/DDR; both edges used for address/data in DDR
IO[3]	Bidirectional Data 3	QPI data lane; tied to VCC if unused; enables 4-lane parallel transfers for 4× bandwidth vs. SPI
SO / IO[1]	Output / Bidirectional Data 1	Serial output in SDR SPI; bidirectional data lane 1 in Dual/Quad modes; always outputs on falling clock edge
VCC	Power Supply	1.71–2.00V core and I/O supply; requires local 100nF decoupling per datasheet layout guidelines
VSS	Ground	Common return path for core and I/O; must be low-impedance connection to minimize noise coupling

Key Features

Feature	Design Value
eXecute-In-Place (XIP)	Eliminates per-access command overhead by sustaining read/write bursts after initial address+XIP-byte setup
Augmented Storage Array	256-byte user-programmable space with 8 individually protected 32-byte sections for calibration data or firmware keys
Hardware + Software Protection	WP# pin locks status register; configurable BPSEL bits enable top/bottom or block-level memory write protection
JEDEC Reset Support	Standardized reset command (66h) restores default register states without requiring power cycle
Unique & Programmable IDs	64-bit factory-unique ID + 64-bit user-writable serial number for traceability and secure boot binding

Applications

Factory Automation	Medical Diagnostics
Use Scenario: Real-time logging of PLC I/O states and motion controller trajectories during machine commissioning. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing timestamped sensor data and fault records with sub-100ns write latency. Use Value: Eliminates battery-backed SRAM maintenance and avoids Flash erase delays during continuous data capture.	Use Scenario: Storing calibration coefficients and patient-specific configuration parameters in portable ultrasound units. IC Role / Device Role / Timing Role: Persistent parameter store accessed at boot and during runtime; retains values across cold starts and battery swaps. Use Value: Guarantees deterministic startup behavior and eliminates recalibration requirements after power loss.
Multifunction Printers	Industrial Routers
Use Scenario: Caching print job metadata, toner level history, and network configuration in embedded printer controllers. IC Role / Device Role / Timing Role: High-endurance NV memory handling frequent small writes from SNMP polling and job queue updates. Use Value: Withstands >10¹⁵ write cycles-far exceeding EEPROM endurance-without degradation over 10+ year product life.	Use Scenario: Storing routing tables, ACL rules, and firmware update staging buffers in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Low-latency configuration store enabling sub-millisecond failover and zero-downtime reconfiguration. Use Value: Enables atomic firmware updates and rollback via dual-bank shadow memory mapping without external controllers.

Factory Automation

Medical Diagnostics

Use Scenario: Real-time logging of PLC I/O states and motion controller trajectories during machine commissioning.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing timestamped sensor data and fault records with sub-100ns write latency.

Use Value: Eliminates battery-backed SRAM maintenance and avoids Flash erase delays during continuous data capture.

Use Scenario: Storing calibration coefficients and patient-specific configuration parameters in portable ultrasound units.

IC Role / Device Role / Timing Role: Persistent parameter store accessed at boot and during runtime; retains values across cold starts and battery swaps.

Use Value: Guarantees deterministic startup behavior and eliminates recalibration requirements after power loss.

Multifunction Printers

Industrial Routers

Use Scenario: Caching print job metadata, toner level history, and network configuration in embedded printer controllers.

IC Role / Device Role / Timing Role: High-endurance NV memory handling frequent small writes from SNMP polling and job queue updates.

Use Value: Withstands >10¹⁵ write cycles-far exceeding EEPROM endurance-without degradation over 10+ year product life.

Use Scenario: Storing routing tables, ACL rules, and firmware update staging buffers in DIN-rail mounted industrial Ethernet switches.

IC Role / Device Role / Timing Role: Low-latency configuration store enabling sub-millisecond failover and zero-downtime reconfiguration.

Use Value: Enables atomic firmware updates and rollback via dual-bank shadow memory mapping without external controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress Semiconductors FM25V08-G	8Mb F-RAM; 3.0V only (2.7–3.6V); max 40MHz SPI; no QPI or XIP	Limited to lower-speed interfaces; lacks augmented storage and hibernate mode	Choose for legacy 3.0V systems where ultra-high endurance is critical but bandwidth is secondary
Winbond W25Q80DVSSIG	8Mb NOR Flash; 2.7–3.6V; 104MHz QPI; requires erase before write; 100k-cycle endurance	Requires block management; slower random writes; no true byte-write capability	Choose when cost sensitivity outweighs write latency and endurance requirements

Compared with FM25V08-G and W25Q80DVSSIG, the M30082040108X0IWAR provides superior write speed (no erase), higher endurance (>10¹⁵ vs. 10¹⁴/10⁵), lower voltage operation (1.8V), and integrated low-power states-making it optimal for real-time industrial data logging where determinism and longevity are mandatory.

Availability

M30082040108X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial networking applications requiring stable component supply, long-term lifecycle support, and guaranteed MRAM performance consistency.

Supply support for M30082040108X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30082040108X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) family-designed specifically to replace battery-backed SRAM and legacy EEPROM/Flash in mission-critical industrial systems demanding instant-write non-volatility and extreme endurance.

FAQ

What is the operating voltage range for the M30082040108X0IWAR?

The M30082040108X0IWAR operates from 1.71V to 2.00V. This 1.8V nominal supply range enables direct interfacing with modern low-power microcontrollers and FPGAs without level-shifting. Operation outside this range may cause functional failure or data corruption, and the device is not rated for 3.0V operation-unlike some other members of the Mxxxx204 family.

Does the M30082040108X0IWAR support Quad SPI (QPI) mode?

Yes, the M30082040108X0IWAR supports full QPI (4-4-4) mode with command, address, and data transferred simultaneously across four I/O lines. In QPI mode, it achieves up to 108MHz SDR throughput, delivering up to 54MB/s effective bandwidth-four times faster than standard SPI-while maintaining compatibility with existing SPI host controllers via mode switching.

How does the augmented storage array in the M30082040108X0IWAR work?

The M30082040108X0IWAR includes a dedicated 256-byte augmented storage array, divided into eight 32-byte programmable sections. Each section can be independently write-protected using configuration bits. This area is ideal for storing calibration data, security keys, or firmware version stamps-separate from main memory and retained across all power modes including Deep Power Down.

What power-saving modes does the M30082040108X0IWAR offer?

The M30082040108X0IWAR offers two ultra-low-power states: Deep Power Down (IDPD ≤ 2µA) and Hibernate (IHBN ≤ 15µA). Both preserve all memory contents and register configurations. Exit times are ≤400µs for Deep Power Down and ≤450µs for Hibernate, enabling rapid resumption of operation-critical for battery-powered or energy-harvesting industrial sensors using the M30082040108X0IWAR.

Is the M30082040108X0IWAR pin-compatible with SOIC-8 devices?

No-the M30082040108X0IWAR uses an 8-pad DFN (WSON) package (5.0mm × 6.0mm), which has different pad layout, solder profile, and thermal characteristics than standard 8-pin SOIC (5.2mm × 5.2mm). While both packages share identical pin functions and numbering, PCB land patterns and reflow profiles are not interchangeable; board redesign is required for migration from SOIC to WSON.

M30082040108X0IWAR Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 8Mbit

Memory Organization:: 2M x 4

Memory Interface:: -

Clock Frequency:: 108 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

M30082040108X0IWAR FAQ

1.How can I place an order for M30082040108X0IWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M30082040108X0IWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M30082040108X0IWAR reliable?

The price and inventory of M30082040108X0IWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30082040108X0IWAR is usually 5 days.

3.What payment methods are accepted for M30082040108X0IWAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30082040108X0IWAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M30082040108X0IWAR?

M30082040108X0IWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M30082040108X0IWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M30082040108X0IWAR?

For technical support, including M30082040108X0IWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30082040108X0IWAR requirements.

6.How does Aetrix verify that M30082040108X0IWAR is sourced from the original manufacturer or authorized distributors?

All M30082040108X0IWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30082040108X0IWAR meets industry standards.

7.What is the process for return or replacement of M30082040108X0IWAR?

All M30082040108X0IWAR units undergo pre-shipment inspection (PSI). If there is an issue with M30082040108X0IWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M30082040108X0IWAR part is unused and in its original packaging.

Return procedure for M30082040108X0IWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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