Renesas M30082040108X0IWAY

Overview

M30082040108X0IWAY from Renesas is a high-performance 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM (P-SRAM) in real-time data logging and firmware storage where non-volatility, low latency, and infinite endurance are critical.

For engineers reviewing the M30082040108X0IWAY datasheet, M30082040108X0IWAY pinout, M30082040108X0IWAY application, or M30082040108X0IWAY equivalent, this page delivers verified specifications, validated pin functions, confirmed industrial use cases, and two technically documented alternative MRAM parts for design continuity and sourcing flexibility.

Technical Context

The M30082040108X0IWAY implements quad SPI (QPI, 4-4-4) with single-data-rate timing at 108MHz, supporting execute-in-place (XIP) to eliminate per-access command overhead. Its 40nm pMTJ STT-MRAM cell enables true random read/write with no write latency penalty and zero wear leveling.

It integrates hardware write protection via WP# pin and software-configurable block protection (Top/Bottom, BP[2:0]), plus a 256-byte augmented storage array with per-section write lock. Power states include Deep Power Down (IDPD ≤ 10µA) and Hibernate (IHBN ≤ 25µA), both preserving data and register configuration.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm, wettable flank, RoHS-compliant. Pin 1 marked by top-side dot; thermal pad exposed on bottom for enhanced heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial MRAM applications.

Compared with M30082040108X0IWAY, MR25H80 trades 1.8V support and augmented storage for broader voltage tolerance, while M30082040054X0IWAY offers identical reliability and footprint at reduced speed-enabling drop-in substitution where bandwidth headroom is available.

Availability

M30082040108X0IWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed MRAM performance consistency across production batches.

Supply support for M30082040108X0IWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30082040108X0IWAY belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered to replace battery-backed SRAM and legacy Flash in applications demanding instant-write non-volatility, deterministic latency, and extreme endurance.

FAQ

What is the operating voltage range for M30082040108X0IWAY?

The M30082040108X0IWAY operates from 1.71V to 2.00V. This 1.8V nominal supply range ensures compatibility with modern low-power microcontrollers and eliminates the need for external level shifters. The device maintains full functionality-including 108MHz QSPI operation and write endurance-across the entire voltage window, as verified in Renesas' Electrical Characteristics table (Section 14).

Does M30082040108X0IWAY support execute-in-place (XIP) functionality?

Yes, M30082040108X0IWAY supports XIP mode, allowing sequential instruction execution directly from MRAM without copying code to RAM. Activation requires sending a specific XIP byte (Axh/Fxh) after the address in read commands. This feature reduces CPU wait states and accelerates firmware update verification-confirmed in Section 6 (Architecture) and Instruction Set (Section 12) of the datasheet.

How is data protected against unintended writes in M30082040108X0IWAY?

M30082040108X0IWAY provides dual-layer protection: hardware-based via the WP# pin (active-low lock for status register), and software-based via configuration bits (BP[2:0], TBSEL) in the Status Register. Both mechanisms can be enabled simultaneously. The Augmented Storage Array also supports per-32-byte write lock-details are specified in Sections 3 (Signal Description), 11.1 (Status Register), and 9 (Augmented Storage Array Map).

What package type and dimensions does M30082040108X0IWAY use?

M30082040108X0IWAY uses an 8-pad DFN (WSON) package measuring 5.0mm × 6.0mm with exposed thermal pad. Pinout matches industry-standard SOIC-8 for layout compatibility, and the wettable flank design supports automated optical inspection (AOI). Mechanical drawings are provided in Section 5.1 of the datasheet, confirming land pattern requirements per IPC-7351B.

Is M30082040108X0IWAY compatible with standard SPI controllers?

Yes, M30082040108X0IWAY is fully compatible with standard SPI controllers supporting Quad SPI (QPI) mode and SPI Mode 0 (CPOL=0, CPHA=0). It accepts 1-4-4 and 4-4-4 instruction formats and complies with JEDEC JESD251 for MRAM. All timing parameters-including tCSDPD (50ns CS# pulse width) and tPU (250µs power-up delay)-are aligned with common MCU SPI peripherals, as validated in Tables 6 and 7.