Renesas M30082040108X0PSAR

Overview

M30082040108X0PSAR from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V or 2.7–3.6V supply range, and industrial-plus (−40°C to +105°C) operation. It delivers SRAM-compatible read/write timing, zero write latency, and unlimited endurance for data logging in real-time control systems.

For engineers reviewing the M30082040108X0PSAR datasheet, M30082040108X0PSAR pinout, M30082040108X0PSAR application, or M30082040108X0PSAR equivalent, key selection criteria include its persistent SRAM behavior, hardware/software write protection, 256-byte augmented storage array, and compatibility with SPI Mode 0/3 in both SDR and DDR configurations.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque technology, enabling true random access with no erase cycles, byte-level writes, and retention exceeding 20 years at 105°C. Its architecture supports Execute-In-Place (XIP), eliminating command overhead for sequential reads.

The device implements dual protection: hardware-based via WP# pin (active-low, requires external drive) and software-based via configurable status register bits (BPSEL[2:0], TBSEL, SNPEN). It supports Deep Power Down (3µs entry, 400µs exit) and Hibernate modes while preserving configuration and data integrity.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm, JEDEC MS-012), RoHS-compliant, with standard gull-wing leads and 1.27mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and W25Q80DVSSIG, M30082040108X0PSAR uniquely combines 108MHz QSPI throughput, true byte-write capability, industrial-plus temperature rating, and integrated hardware/software protection-making it optimal for high-integrity, high-write-frequency embedded control applications.

Availability

M30082040108X0PSAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30082040108X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The M30082040108X0PSAR belongs to Renesas' Persistent SRAM (P-SRAM) family, designed to replace battery-backed SRAM and legacy serial flash in mission-critical systems demanding instant-write non-volatility and extreme reliability.

FAQ

What is the operating voltage range supported by M30082040108X0PSAR?

M30082040108X0PSAR supports two independent voltage ranges: 1.71V to 2.00V for 1.8V systems and 2.70V to 3.60V for 3.3V systems. The device automatically adapts to the applied VCC level and does not require external voltage translation. This dual-voltage capability allows M30082040108X0PSAR to serve as a single BOM item across multiple platform generations.

Does M30082040108X0PSAR require an external pull-up resistor on the WP# pin?

Yes, M30082040108X0PSAR requires the WP# pin to be actively driven - it has no internal pull-up. A 10kΩ pull-up to VCC is recommended when hardware write protection is not used. Leaving WP# floating violates the absolute maximum ratings and may cause unpredictable status register locking behavior during power-up sequences.

How does the Augmented Storage Array in M30082040108X0PSAR differ from main memory?

The Augmented Storage Array in M30082040108X0PSAR is a dedicated 256-byte region (address 000000h–0000FFh) physically separate from the 8Mb main array. It is divided into eight 32-byte sections, each independently programmable and write-protectable via configuration registers. This enables secure storage of calibration data, cryptographic keys, or serial numbers without risking corruption of application firmware stored in main memory.

Can M30082040108X0PSAR operate in Double Data Rate (DDR) mode at 108MHz?

No, M30082040108X0PSAR supports DDR mode only at 54MHz maximum clock frequency. The "0108" in the part number denotes Single Data Rate operation at 108MHz. DDR functionality is available in the 0054-speed grade variants (e.g., M30082040054X0PSAR), which use both clock edges for address/data transfer but halve the effective clock rate to maintain timing margins.

Is M30082040108X0PSAR pin-compatible with standard 8-pin SOIC SPI flash devices?

Yes, M30082040108X0PSAR uses the industry-standard 8-pin SOIC (MS-012) footprint with identical pinout and signal assignments (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS) as common SPI NOR flash devices. This enables direct PCB-level replacement without layout changes, provided the host controller supports QSPI instructions and timing requirements.