Renesas M30082040108X0PSAY

Overview

M30082040108X0PSAY from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V or 2.7–3.6V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging and firmware storage.

For engineers reviewing the M30082040108X0PSAY datasheet, M30082040108X0PSAY pinout, M30082040108X0PSAY application, or M30082040108X0PSAY equivalent, key selection criteria include QSPI x4 timing compliance, hardware/software write protection, 256-byte augmented storage array, deep power-down latency (≤3 µs), and JEDEC reset support.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology, enabling true random access with SRAM-compatible read/write timings and zero write latency penalty. It supports Execute-In-Place (XIP), eliminating command overhead for sequential reads.

The device implements dual protection: hardware write protect via WP# pin (active-low, no internal pull-up) and software-configurable block protection through status register bits BPSEL[2:0] and TBSEL. It offers two low-power states-Deep Power Down (IDPD ≤ 10 µA) and Hibernate-with full configuration retention and sub-450 µs wake-up.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0 mm × 6.0 mm, wettable flank, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, M30082040108X0PSAY delivers higher bandwidth via QPI x4, eliminates battery dependency, integrates configurable protection and augmented storage, and supports industrial-plus temperature operation in a compact 5×6mm DFN.

Availability

M30082040108X0PSAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-plus temperature performance.

Supply support for M30082040108X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30082040108X0PSAY belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy Flash/NOR in mission-critical systems demanding instant write persistence, infinite endurance, and extended temperature reliability.

FAQ

What voltage ranges does the M30082040108X0PSAY support?

M30082040108X0PSAY supports two independent operating voltage ranges: 1.71V to 2.00V (1.8V nominal) and 2.70V to 3.60V (3.3V nominal). Both ranges are fully specified across the full industrial-plus temperature range (−40°C to +105°C). The device automatically adapts to the applied VCC level and does not require external voltage selection logic. This dual-voltage capability allows direct drop-in replacement in either 1.8V or 3.3V designs without redesigning power delivery networks.

Does the M30082040108X0PSAY support Quad SPI x4 mode?

Yes, M30082040108X0PSAY fully supports Quad SPI (QPI) 4-4-4 mode, using all four I/O pins (IO[0]–IO[3]) for command, address, and data transfer. In this mode, it achieves a maximum clock frequency of 108MHz in Single Data Rate (SDR), delivering up to 432 MB/s effective throughput. The device also supports Dual SPI and standard SPI modes, with automatic mode detection based on the initial instruction sequence.

How is write protection implemented on the M30082040108X0PSAY?

M30082040108X0PSAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, must be driven), and software-based via status register bits (WP#EN, BPSEL[2:0], TBSEL). When WP#EN = 1 and WP# is low, the status register becomes read-only. Software protection allows selective locking of top/bottom memory blocks or individual 256KB sectors. Both schemes operate independently and can be combined for defense-in-depth data integrity.

What is the purpose of the 256-byte Augmented Storage Array in the M30082040108X0PSAY?

The 256-byte Augmented Storage Array in M30082040108X0PSAY is a physically separate, user-programmable memory region divided into eight 32-byte sections. Each section can be individually write-protected after programming. It is intended for storing critical non-volatile data such as calibration coefficients, security keys, or device-specific identifiers - data that must remain isolated from main memory operations and survive field firmware updates without risk of overwrite.

Does the M30082040108X0PSAY support Execute-In-Place (XIP)?

Yes, M30082040108X0PSAY supports Execute-In-Place (XIP) functionality. Once enabled via the XIP entry byte (0xAxh), the device executes sequential read commands without reissuing the opcode for each access. This reduces instruction overhead and improves effective read bandwidth - especially valuable for boot code execution or real-time firmware patching where deterministic latency is required.