Renesas M30082040108X0PWAR

Overview

M30082040108X0PWAR from Renesas is a 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing with persistent data retention, enabling real-time logging in factory automation controllers.

For engineers reviewing the M30082040108X0PWAR datasheet, M30082040108X0PWAR pinout, M30082040108X0PWAR application, or M30082040108X0PWAR equivalent, key selection criteria include its 108MHz SDR QSPI speed, hardware/software write protection, 256-byte augmented storage array, and support for deep power-down and hibernate modes in harsh-temperature embedded systems.

Technical Context

The M30082040108X0PWAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and dual low-power states (Deep Power Down, Hibernate) with full configuration retention.

It features eXecute-In-Place (XIP) capability to reduce instruction overhead during sequential reads, plus dual-layer data protection: hardware-based via WP# pin and software-configurable via status register bits (BPSEL[2:0], TBSEL, WP#EN). The 256-byte Augmented Storage Array is segmented into eight 32-byte programmable/protectable sections.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm footprint, exposed thermal pad (pin 5 not assigned; pad connected to VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, the M30082040108X0PWAR offers higher interface bandwidth (108MHz QSPI), zero-battery non-volatility, smaller WSON footprint, and integrated low-power states - making it optimal for new 1.8V industrial designs demanding performance, reliability, and space efficiency.

Availability

M30082040108X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30082040108X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30082040108X0PWAR belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered to replace legacy NVSRAM and serial flash in applications demanding true SRAM-like performance with inherent non-volatility and radiation tolerance.

FAQ

What is the operating voltage range for M30082040108X0PWAR?

The M30082040108X0PWAR operates from 1.71V to 2.00V. This 1.8V nominal supply range is optimized for compatibility with modern low-power microcontrollers and FPGAs. Operation outside this window is not guaranteed, and the device will not function below 1.71V or above 2.00V per the datasheet's absolute maximum ratings. The M30082040108X0PWAR does not support 3.0V operation - that variant is designated with suffix '3' (e.g., M30082040108X0PWA3).

Does M30082040108X0PWAR support Quad SPI (QPI) mode?

Yes, the M30082040108X0PWAR fully supports Quad SPI (QPI) mode with 4-4-4 command-address-data timing. In QPI mode, all four I/O pins (IO[0]–IO[3]) are used for command, address, and data transfer, enabling 108MHz SDR throughput. The device also supports Dual SPI and standard SPI modes. QPI entry is controlled via the Configuration Register 1 (address 0x000002h), and the M30082040108X0PWAR remains in QPI until explicitly exited using the standard SPI exit command.

What is the purpose of the Augmented Storage Array in M30082040108X0PWAR?

The Augmented Storage Array is a dedicated 256-byte memory region separate from the main 8Mb array, organized into eight 32-byte programmable sections. Each section can be individually write-protected via configuration bits. It is intended for storing critical, infrequently updated data such as calibration constants, device serial numbers, or cryptographic keys. The M30082040108X0PWAR provides hardware-level isolation and independent protection - ensuring this data remains intact even during bulk erase or firmware update operations on the main array.

How does the write protection work on M30082040108X0PWAR?

The M30082040108X0PWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled) and software-based via status register bits (TBSEL, BPSEL[2:0]). Both mechanisms can be used simultaneously. When WP# is asserted low and WP#EN bit is set, the status register becomes read-only. Software protection allows selective locking of top/bottom memory blocks or configurable sector sizes. The M30082040108X0PWAR requires explicit enable/disable sequencing - protection is not active by default after power-up.

Is M30082040108X0PWAR pin-compatible with other members of the Mxxxx204 family?

Yes, the M30082040108X0PWAR shares identical pinout and package (8-pad DFN WSON) with all Mxxxx204 variants, including M10082040108X0PWAR and M30162040108X0PWAR. All devices use the same CS#, CLK, IO[0]–IO[3], WP#, VCC, and VSS pin assignments and electrical signaling. This allows drop-in replacement across densities (4Mb/8Mb/16Mb) and voltage grades (1.8V/3.0V) within the same package type - simplifying design reuse and inventory management for the M30082040108X0PWAR and related parts.