My Inquiry
My Account
Renesas M3008316035NX0IBCR
- Part No.:
- M3008316035NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3008316035NX0IBCR.pdf
- Description:
- IC RAM 8MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,405
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3008316035NX0IBCR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable, byte-addressable storage in real-time control systems.
For engineers reviewing the M3008316035NX0IBCR datasheet, M3008316035NX0IBCR pinout, M3008316035NX0IBCR application, or M3008316035NX0IBCR equivalent, this page provides verified technical context, validated pin functions, confirmed operating margins, and peer-validated alternative MRAM options for industrial embedded memory replacement.
Technical Context
The M3008316035NX0IBCR implements STT-MRAM technology using a 40nm pMTJ cell array, supporting true random-access reads and writes without erase cycles. Its parallel asynchronous interface uses active-low E#, G#, W#, UB#, and LB# controls to manage chip enable, output enable, write strobe, and byte-select functionality across a 19-bit address bus (ADDR[18:0]) for 524,288 × 16 organization.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms and Vwi = 2.1–2.5V write-inhibit threshold. The device supports two write control modes-W#-controlled and E#-controlled-with identical 35ns timing budgets and defined bus turnaround delays (tWLQZ ≤ 12ns, tWHQX ≥ 3ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (524,288 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control signals |
| Read/Write Cycle Time | 35ns minimum - enables SRAM-compatible system timing without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and brownout tolerance |
| Operating Temperature | −40°C to +105°C - qualified for extended industrial environments including factory automation and smart metering |
| Data Retention | 10 years at 105°C - ensures long-term non-volatility without backup power or refresh |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-write-frequency logging applications |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; places device in standby (ISB ≤ 3.5mA) when high |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; required low for read access |
| W# | Write Enable | Active-low write strobe; low during data-in, high during read or Hi-Z states |
| UB# | Upper Byte Enable | Active-low select for DQ[15:8]; enables partial-word writes without affecting lower byte |
| LB# | Lower Byte Enable | Active-low select for DQ[7:0]; enables independent lower-byte access |
| ADDR[18:0] | Address Inputs | 19-bit address bus supporting full 8Mbit addressing (524,288 words) |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with 10pF input capacitance; supports simultaneous upper/lower byte operations |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates need for external backup batteries or capacitors while maintaining SRAM timing compatibility |
| 40nm pMTJ STT-MRAM technology | Enables high-density, low-power non-volatility with zero write latency penalty versus volatile RAM |
| Industrial-plus temperature support | Validated operation up to +105°C junction temperature - suitable for sealed enclosures without forced cooling |
| Byte-selectable write capability | UB#/LB# pins allow granular 8-bit writes, reducing bus contention and power spikes in partial updates |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - robust in motor-drive or transformer-proximate environments |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history, calibration offsets, and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM or slow SPI Flash in PLC modules. Use Value: Enables deterministic 35ns read/write without backup circuitry, preserving critical state during unexpected shutdowns. | Use Scenario: Portable ultrasound unit capturing and archiving image frame buffers and patient metadata between sessions. IC Role / Device Role / Timing Role: High-reliability frame buffer and configuration store interfacing directly to ARM-based SoC via parallel bus. Use Value: Guarantees 10-year data retention at body-temperature-equivalent ambient (≤40°C), eliminating SD card wear and firmware update risks. |
| Smart Meter | Data Switches and Routers |
Use Scenario: Electricity meter recording tamper events, tariff schedules, and consumption snapshots every 15 minutes over 10+ year field life. IC Role / Device Role / Timing Role: Endurance-critical event log memory with guaranteed 10¹⁴ write cycles and 10-year retention at 85°C ambient. Use Value: Removes EEPROM endurance limitations and avoids Flash block-erase delays during frequent timestamped writes. | Use Scenario: Carrier-grade Ethernet switch storing forwarding tables, port configurations, and security policies across reboots. IC Role / Device Role / Timing Role: Fast-access configuration memory mapped into CPU address space for sub-microsecond policy reloads. Use Value: Delivers 35ns random-access reads/writes - 10× faster than NAND-based configuration storage - accelerating failover and provisioning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 8Mbit, 45ns access, 44-pin TSOP, −40°C to +85°C only | Lacks industrial-plus rating and FBGA option; lower thermal performance (θJA = 40°C/W vs 42.67°C/W) | Choose for cost-sensitive 85°C-only designs where TSOP footprint is preferred and 45ns timing is acceptable. |
| Cypress Semiconductors FM22L16 | 16Mbit, 45ns, 48-ball FBGA, 2.7–3.6V, −40°C to +85°C | Doubles density but sacrifices 105°C operation and has higher standby current (ISB ≤ 5mA vs 3.5mA) | Choose when higher capacity is needed and extended temperature is not required; verify layout compatibility with same FBGA pad stack. |
Compared with M3008316035NX0IBCR, MR2A16A offers legacy TSOP compatibility but lacks 105°C support and 35ns speed, while FM22L16 trades temperature margin for density and shares the FBGA footprint - making M3008316035NX0IBCR optimal for new industrial-plus designs demanding speed, endurance, and thermal resilience.
Availability
M3008316035NX0IBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering requiring stable component supply across extended temperature ranges and multi-decade product lifecycles.
Supply support for M3008316035NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy EEPROM/Flash in high-reliability industrial systems where data persistence, speed, and endurance cannot be compromised.
FAQ
What is the maximum operating temperature for M3008316035NX0IBCR?
The M3008316035NX0IBCR is rated for industrial-plus operation from −40°C to +105°C ambient temperature. This specification is validated per JEDEC standards and supported by thermal resistance data (θJA = 42.67°C/W for 48-ball FBGA). Operation beyond 105°C ambient may exceed the 125°C absolute maximum junction temperature and is not guaranteed.
Does M3008316035NX0IBCR require a backup power source or capacitor?
No, M3008316035NX0IBCR does not require any backup power source, supercapacitor, or battery. As a true non-volatile MRAM, it retains data indefinitely after power removal - verified for 10 years at 105°C - and performs instant-on reads/writes without initialization delay or refresh overhead.
How many address lines does M3008316035NX0IBCR use?
M3008316035NX0IBCR uses 19 address lines (ADDR[18:0]) to access its full 8Mbit (524,288 × 16) memory array. This matches the 524,288-word depth required for x16 organization and is consistent across all 48-ball FBGA variants in the M3xxx316 family.
Is M3008316035NX0IBCR pin-compatible with other densities in the M3xxx316 family?
Yes, M3008316035NX0IBCR shares identical pinout, signal assignment, and FBGA ball map with M3004316035NX0IBCR, M3016316035NX0IBCR, and M3032316035NX0IBCR in the 48-ball FBGA package. All support ADDR[20:0] routing, though only 19 bits (ADDR[18:0]) are used for 8Mbit addressing.
What is the write endurance rating of M3008316035NX0IBCR?
M3008316035NX0IBCR is rated for 10¹⁴ write cycles - effectively unlimited for all practical industrial applications. This endurance is intrinsic to STT-MRAM physics and is specified under worst-case conditions (105°C, VCC = 3.6V), with no degradation in read latency or data retention observed across lifetime testing.
M3008316035NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3008316035NX0IBCR FAQ
1.How can I place an order for M3008316035NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0IBCR reliable?
The price and inventory of M3008316035NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3008316035NX0IBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0IBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0IBCR?
M3008316035NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0IBCR?
For technical support, including M3008316035NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0IBCR requirements.
6.How does Aetrix verify that M3008316035NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3008316035NX0IBCR?
All M3008316035NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0IBCR part is unused and in its original packaging.
Return procedure for M3008316035NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0IBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
