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Renesas M3008316035NX0IBCY
- Part No.:
- M3008316035NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3008316035NX0IBCY.pdf
- Description:
- IC RAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,869
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Product details
Overview
M3008316035NX0IBCY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers true non-volatile random access with SRAM-compatible timing, infinite endurance, and 10-year data retention at 105°C-ideal for factory automation controllers requiring instant write persistence without backup power.
For engineers reviewing the M3008316035NX0IBCY datasheet, M3008316035NX0IBCY pinout, M3008316035NX0IBCY application, or M3008316035NX0IBCY equivalent, this page provides verified technical context, package mapping, functional pin definitions, real-world use cases, and validated alternative options for industrial embedded memory selection.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling byte- and word-level writes without erase cycles. Its parallel asynchronous interface supports independent upper/lower byte enables (UB#/LB#), chip enable (E#), output enable (G#), and write enable (W#) for deterministic timing control.
The device implements a full SRAM-like command protocol: E# and W# low initiates write; E# low + G# low + W# high enables read. Address decoding scales across densities-ADDR[18:0] (19 pins) for 8Mbit-with no wait states and zero latency penalty between successive reads or writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8 Mbit (524,288 × 16 organization) |
| Access Time | 35 ns read/write cycle - enables direct SRAM drop-in replacement in legacy systems |
| Supply Voltage | 2.7 V to 3.6 V - compatible with standard 3.3 V industrial rails, no level-shifting required |
| Operating Temp | −40°C to +85°C - qualified for uncontrolled industrial environments without derating |
| Data Retention | 10 years at 105°C - ensures firmware and calibration data integrity over full product lifecycle |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling logic and controller overhead |
| Interface | Parallel asynchronous x16 - supports legacy microcontroller buses without clock or protocol translation |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down), RoHS/REACH compliant, industrial-grade thermal resistance (θJA = 42.67°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must track VCC during power-up/down to prevent initialization failure |
| G# | Output Enable | Active-low tri-state control - isolates DQ[15:0] during bus turnaround or idle |
| W# | Write Enable | Active-low write strobe - determines direction of DQ[15:0] (input during write, high-Z during read) |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0] - enables partial-word writes without read-modify-write |
| ADDR[18:0] | Address Inputs | 19-bit address bus - selects one of 524,288 words in 8Mbit array; no address latching required |
| DQ[15:0] | Bidirectional Data | 16-bit I/O bus - drives valid data within 35 ns of address/enable assertion; high-Z when disabled |
| VCC / VSS | Power / Ground | Single 3.3 V supply domain - no separate I/O or core rails; decoupling required per JEDEC guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates battery/capacitor backup and firmware recovery routines - data survives instantaneous power loss |
| 40 nm pMTJ STT-MRAM technology | Enables 35 ns random-access writes with <20 mA typical write current - reduces system power budget vs. Flash |
| Industrial temperature qualification | Validated operation from −40°C to +85°C - supports deployment in motor drives, PLCs, and outdoor metering without thermal margining |
| Byte-selectable write capability | UB#/LB# pins allow 8-bit writes to either half of DQ[15:0] - avoids full-word overwrites in configuration storage |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - suitable for proximity to motors, transformers, and solenoids |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging System |
|---|---|
Use Scenario: Storing real-time motion profiles and safety-critical I/O state snapshots in programmable logic controllers (PLCs) with sub-millisecond power-loss response. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing immediate write persistence and deterministic 35 ns access for servo loop buffers. Use Value: Eliminates supercapacitor-based backup circuitry and associated BOM cost, board space, and reliability testing. |
Use Scenario: Caching calibration coefficients and DICOM header metadata in portable ultrasound units where battery runtime and cold-start speed are critical. IC Role / Device Role / Timing Role: High-reliability configuration store accessed at boot and during image acquisition - no delay for Flash erase or EEPROM write cycles. Use Value: Reduces cold-boot time by >200 ms versus EEPROM and avoids data corruption risk during unexpected shutdown. |
| Smart Energy Meter | Industrial Network Router |
Use Scenario: Logging tamper events, tariff schedules, and cumulative kWh readings in ANSI C12.22-compliant meters deployed in utility substations. IC Role / Device Role / Timing Role: Endurance-critical data logger with guaranteed 10¹⁴ write cycles - handles 10+ writes/second continuously for 10+ years. Use Value: Removes need for wear-leveling firmware and extends field service interval beyond 15 years. |
Use Scenario: Storing routing tables and firmware patch images in DIN-rail mounted industrial Ethernet switches operating in harsh EMI environments. IC Role / Device Role / Timing Role: Magnetic-immune program storage - immune to 24,000 A/m fields generated by adjacent 48 V PoE injectors and relays. Use Value: Prevents silent data corruption during high-current switching transients, eliminating field returns due to firmware corruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8 Mbit nvSRAM with 45 ns access, integrated lithium battery backup, 3.3 V only | Requires battery maintenance and periodic replacement; higher long-term TCO in sealed enclosures | Select when legacy 45 ns timing is acceptable and battery servicing is feasible |
| Infineon F-RAM FM28V20A-55-TG | 8 Mbit parallel FRAM with 55 ns access, unlimited endurance, but lower noise immunity (no magnetic spec) | Lacks published magnetic field tolerance - unsuitable near high-current industrial actuators | Select for ultra-low-power (<1 µA standby) applications where magnetic environment is benign |
Compared with CY14B108L-BA45XIT and FM28V20A-55-TG, M3008316035NX0IBCY offers faster 35 ns access, battery-free operation, and certified 24,000 A/m magnetic immunity - making it optimal for high-reliability, maintenance-free industrial control nodes.
Availability
M3008316035NX0IBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for M3008316035NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
M3008316035NX0IBCY belongs to Renesas' Parallel MRAM family, engineered specifically for industrial systems needing instant-write non-volatility, SRAM compatibility, and robustness in electrically noisy, thermally demanding environments.
FAQ
What is the exact memory density and organization of M3008316035NX0IBCY?
M3008316035NX0IBCY is an 8 Mbit parallel MRAM organized as 524,288 words × 16 bits. This matches the "008" segment in its part number and is confirmed in the Memory Array Organization section of the datasheet. The device uses ADDR[18:0] (19 address lines) to access all locations, with no internal banking or interleaving required.
Does M3008316035NX0IBCY require external backup power or capacitors?
No, M3008316035NX0IBCY requires no external backup power source. As a true non-volatile MRAM, it retains data indefinitely after power removal without batteries, supercapacitors, or charge pumps. Its persistent SRAM (P-SRAM) architecture guarantees data integrity through instantaneous power loss - a key differentiator from nvSRAM or battery-backed SRAM.
What package type is used for M3008316035NX0IBCY, and is it lead-free?
M3008316035NX0IBCY uses a 48-ball FBGA package (10 mm × 10 mm, balls-down), specified in the Ordering Options table under package code "BC". It is RoHS and REACH compliant, with lead-free solder finish and halogen-free molding compound - fully qualified for industrial reflow profiles per J-STD-020.
Can M3008316035NX0IBCY replace standard SRAM in existing designs?
Yes, M3008316035NX0IBCY is designed as a drop-in replacement for 8 Mbit ×16 asynchronous SRAMs. It shares identical pinout (48-ball FBGA), voltage range (2.7–3.6 V), timing (35 ns), and control signals (E#, G#, W#, UB#, LB#). No PCB or firmware changes are needed - only validation of power-up sequencing per the tPU ≥1 ms requirement.
What is the magnetic field immunity specification for M3008316035NX0IBCY?
M3008316035NX0IBCY is rated for 24,000 A/m magnetic field immunity during both read and write operations, as specified in Tables 9 and 11 of the datasheet. This allows reliable operation in proximity to motors, contactors, and high-current busbars - a critical advantage over FRAM and conventional Flash in industrial motion control systems.
M3008316035NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3008316035NX0IBCY FAQ
1.How can I place an order for M3008316035NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0IBCY reliable?
The price and inventory of M3008316035NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3008316035NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0IBCY?
M3008316035NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0IBCY?
For technical support, including M3008316035NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0IBCY requirements.
6.How does Aetrix verify that M3008316035NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3008316035NX0IBCY?
All M3008316035NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0IBCY part is unused and in its original packaging.
Return procedure for M3008316035NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0IBCY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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