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Renesas M3008316035NX0ITBR
- Part No.:
- M3008316035NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316035NX0ITBR.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,544
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Product details
Overview
M3008316035NX0ITBR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It uses 40nm pMTJ STT-MRAM technology, delivers non-volatile SRAM-compatible performance, and is packaged in a 54-pin TSOP (10mm × 22mm) for factory automation and medical diagnostics systems.
For engineers reviewing the M3008316035NX0ITBR datasheet, M3008316035NX0ITBR pinout, M3008316035NX0ITBR application, or M3008316035NX0ITBR equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and confirmed alternative MRAM parts for industrial embedded memory replacement.
Technical Context
The M3008316035NX0ITBR implements a true random-access, byte-selectable non-volatile memory architecture using spin-transfer torque magnetoresistive (STT-MRAM) cells. Its parallel x16 interface supports independent upper/lower byte enables (UB#/LB#), chip enable (E#), output enable (G#), and write enable (W#) for asynchronous SRAM-like timing control.
It operates with 35ns minimum read/write cycle time, 1014 write endurance, and 10-year data retention at 105°C. The device requires strict power sequencing (E#/W#/G# must follow VCC during power-up/down) and features magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8 Mbit (524,288 × 16 organization) |
| Interface | Parallel asynchronous x16 with UB#/LB# byte control |
| Access Time | 35 ns min read/write cycle - enables drop-in SRAM replacement without wait states |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3 V industrial rails |
| Operating Temp | −40°C to +85°C - qualified for industrial control and medical diagnostics environments |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power or refresh |
| Endurance | 1014 write cycles - eliminates wear-leveling firmware overhead vs. Flash/EEPROM |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), surface-mount, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 2.5 mA) when high |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; required low for read access |
| W# | Write Enable | Active-low signal that gates write data into memory array when E# is low |
| UB# | Upper Byte Enable | Active-low control enabling DQ[15:8]; allows partial-word writes |
| LB# | Lower Byte Enable | Active-low control enabling DQ[7:0]; supports byte-granularity writes |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing (8Mbit × 16) |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z control via G#, UB#, LB#; supports concurrent read/write arbitration |
| VCC / VSS | Power / Ground | Single 3.3 V supply rail; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and refresh circuitry while maintaining 35 ns random access |
| 1014 write endurance | Enables logging, configuration storage, and state retention in high-write-cycle applications |
| Industrial temperature range | Validated operation from −40°C to +85°C supports deployment in PLCs and diagnostic equipment |
| 40 nm pMTJ STT-MRAM process | Delivers low power (12 mA read, 20 mA write typical) and high magnetic immunity (24 kA/m) |
| Byte-selectable write | UB#/LB# pins allow 8-bit or 16-bit writes without disturbing adjacent bytes |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM or slow NAND+RAM hybrids. Use Value: Guarantees zero-data-loss power fail recovery with sub-40 ns write latency and infinite endurance. |
Use Scenario: Portable ultrasound system retaining calibration coefficients and last-scan metadata between sessions. IC Role / Device Role / Timing Role: Persistent configuration store accessed during boot and runtime without delay penalties. Use Value: Enables instant-on capability and eliminates EEPROM wear-out concerns in field-deployed devices. |
| Industrial Control And Monitoring | Smart Meter |
Use Scenario: Remote RTU capturing sensor readings every 100 ms and archiving critical events. IC Role / Device Role / Timing Role: High-reliability data logger with deterministic write timing and no block erase overhead. Use Value: Supports continuous 100 kHz sampling bursts and retains 10+ years of timestamped data unattended. |
Use Scenario: Electricity meter recording tamper events, tariff switches, and consumption snapshots. IC Role / Device Role / Timing Role: Secure, long-life non-volatile memory for regulatory-compliant event logging. Use Value: Meets 10-year data retention requirement at elevated ambient temperatures without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit density, 45ns access, 44-pin TSOP, same 3.3V/−40°C to +85°C spec | Limited to 4Mbit; insufficient for 8Mbit buffer requirements in multi-channel controllers | Select when footprint-constrained designs require smallest TSOP package and lower density suffices |
| Renesas M3016316035NX0ITBR | 16Mbit density, identical 35ns timing, 54-pin TSOP, same voltage/temp specs | Higher density enables larger firmware buffers or extended event logs without board redesign | Choose for future-proofing or when application demands >8Mbit persistent memory capacity |
Compared with M3008316035NX0ITBR, MR2A16A offers smaller footprint but half the capacity and slower timing, while M3016316035NX0ITBR delivers double the memory in the same package-enabling scalable storage without layout changes.
Availability
M3008316035NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-lifecycle assurance, and guaranteed MRAM performance consistency.
Supply support for M3008316035NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy NVRAM in mission-critical industrial systems where data persistence, speed, and reliability cannot be compromised.
FAQ
What is the memory organization of the M3008316035NX0ITBR?
The M3008316035NX0ITBR has an 8 Mbit density organized as 524,288 words × 16 bits. This corresponds to a 19-bit address bus (ADDR[18:0]) and supports full x16 parallel access. The device uses STT-MRAM technology with no refresh requirement and guarantees data retention for 10 years at 105°C. Its architecture enables true random read/write without erase cycles.
Does the M3008316035NX0ITBR require external backup power or capacitors?
No, the M3008316035NX0ITBR does not require external backup power, supercapacitors, or batteries. As a non-volatile MRAM, it retains data indefinitely after power removal. Its write operation completes within 35 ns and is immune to power loss during write - no write-protection circuitry or power-fail detection is needed. The only power sequencing requirement is that E#, W#, and G# must track VCC during power-up/down.
Is the M3008316035NX0ITBR pin-compatible with standard SRAMs?
The M3008316035NX0ITBR uses a standard parallel x16 interface with E#, G#, W#, UB#, LB#, ADDR[18:0], and DQ[15:0], matching common 54-pin TSOP SRAM footprints. However, it is not a direct pin-for-pin drop-in replacement due to differences in power-up timing (tPU = 1 ms minimum) and absence of ZQ or self-refresh pins. Board-level validation is required, though signal mapping and timing are SRAM-compatible.
What is the maximum magnetic field tolerance of the M3008316035NX0ITBR?
The M3008316035NX0ITBR is rated for magnetic field immunity up to 24,000 A/m (300 Gauss) during both read and write operations. This specification is verified per JEDEC standards and ensures reliable operation near motors, transformers, and other high-field industrial components. No magnetic shielding is required in typical factory or medical equipment enclosures.
Can the M3008316035NX0ITBR operate at 2.5 V?
No, the M3008316035NX0ITBR requires a minimum VCC of 2.7 V and is specified only for 2.7–3.6 V operation. Operation below 2.7 V violates the absolute maximum ratings and may result in data corruption, failed writes, or undefined behavior. The device includes a write-inhibit threshold (Vwi = 2.1–2.5 V) to prevent partial writes during brownout, but sustained operation must remain within the recommended 2.7–3.6 V range.
M3008316035NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316035NX0ITBR FAQ
1.How can I place an order for M3008316035NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0ITBR reliable?
The price and inventory of M3008316035NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3008316035NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0ITBR?
M3008316035NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0ITBR?
For technical support, including M3008316035NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0ITBR requirements.
6.How does Aetrix verify that M3008316035NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3008316035NX0ITBR?
All M3008316035NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0ITBR part is unused and in its original packaging.
Return procedure for M3008316035NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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