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Renesas M3008316035NX0ITBY
- Part No.:
- M3008316035NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316035NX0ITBY.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,123
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Product details
Overview
M3008316035NX0ITBY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3008316035NX0ITBY datasheet, M3008316035NX0ITBY pinout, M3008316035NX0ITBY application, or M3008316035NX0ITBY equivalent, this page provides verified technical context, validated pin functions, real-world use cases for industrial edge devices, and two confirmed alternative MRAM parts with documented timing and packaging differences.
Technical Context
The M3008316035NX0ITBY implements STT-MRAM technology using a 40nm pMTJ cell array, supporting true random-access reads and writes without erase cycles. Its parallel asynchronous interface uses active-low E#, G#, and W# control signals with byte-enable (UB#/LB#) for x16 data transfer.
It operates in two distinct modes: write mode requires E# and W# low (G# high), while read mode requires E# and G# low (W# high). Address decoding supports 19-bit addressing (ADDR[18:0]) for its 524,288 × 16 memory organization, and power-up initialization mandates synchronized assertion of E#/W#/G# with VCC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (524,288 × 16 organization) |
| Access Time | 35ns read/write cycle - enables SRAM-compatible timing in legacy parallel bus designs |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial logic rails |
| Operating Temp | −40°C to +85°C - qualified for industrial control and factory automation environments |
| Data Retention | 10 years at 105°C - ensures long-term reliability without backup power or refresh |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-write-rate logging applications |
| Interface | Parallel asynchronous x16 - no clock required; direct drop-in replacement for PSRAM/Flash in existing PCB layouts |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-grade plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent corruption |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high-Z when deasserted |
| W# | Write Enable | Active-low signal that determines direction: low = write, high = read |
| UB# / LB# | Byte Enables | Independent control of upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[18:0] | Address Inputs | 19-bit address bus; full decoding for 524,288-word space; no internal latching |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with 10pF input capacitance; supports simultaneous byte-level access |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | Eliminates need for external backup batteries or capacitors in data-logging subsystems |
| 40nm pMTJ STT-MRAM technology | Enables 35ns random access with zero write latency penalty vs. Flash erase overhead |
| Unlimited endurance (10¹⁴ cycles) | Supports continuous write-intensive operation in network packet buffering without degradation |
| Industrial temperature range (−40°C to +85°C) | Validated for deployment in uncontrolled ambient environments like PLC cabinets and medical imaging chassis |
| RoHS & REACH compliance | Meets global environmental directives for industrial OEM manufacturing and export |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs during CNC machine operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known state and error codes across power cycles. Use Value: Enables deterministic restart within microseconds after brownout, eliminating re-homing procedures. | Use Scenario: Portable ultrasound device capturing and archiving image frame metadata and calibration parameters. IC Role / Device Role / Timing Role: High-reliability parameter store retaining sensor calibration coefficients between patient sessions. Use Value: Guarantees consistent image fidelity without recalibration, meeting FDA Class II device traceability requirements. |
| Smart Meter | Industrial Control And Monitoring |
Use Scenario: Electricity meter recording time-of-use consumption data and firmware update status. IC Role / Device Role / Timing Role: Tamper-resistant event log with atomic write capability for regulatory audit trails. Use Value: Survives grid transients and maintains integrity of billing records over 10+ year field life. | Use Scenario: Distributed I/O module storing configuration profiles and diagnostic snapshots for remote SCADA nodes. IC Role / Device Role / Timing Role: Configuration EEPROM replacement with instant write commit and no delay penalties. Use Value: Reduces commissioning time by enabling on-the-fly parameter updates without system reboot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar MRAM memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit density, 45ns access, 44-pin TSOP package | Limited to lower-density applications requiring same footprint but relaxed timing | Select when board space is constrained and 4Mbit capacity suffices with 45ns tolerance |
| Renesas M3008316045NX0ITBY | Same 8Mbit density and 54-pin TSOP, but 45ns access time | Suitable for cost-optimized designs where 10ns slower timing is acceptable | Choose for BOM rationalization where existing 35ns margin is unused and lower test cost is prioritized |
Compared with M3008316035NX0ITBY, MR2A16A reduces capacity and increases access time but offers identical industrial temperature support in a smaller package; M3008316045NX0ITBY retains full compatibility while relaxing timing to reduce test overhead and cost.
Availability
M3008316035NX0ITBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature qualification.
Supply support for M3008316035NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 product line delivers high-reliability parallel MRAM targeting applications needing instant non-volatility, infinite endurance, and SRAM-equivalent timing - specifically engineered for industrial edge computing and mission-critical data logging.
FAQ
What is the memory organization of the M3008316035NX0ITBY?
The M3008316035NX0ITBY features an 8Mbit memory array organized as 524,288 words × 16 bits. This corresponds to 19 address lines (ADDR[18:0]), supporting full random access without page or sector constraints. The x16 bus width allows 16-bit data transfers per cycle, matching legacy SRAM and PSRAM interfaces in industrial controllers.
Does the M3008316035NX0ITBY require a write-protect mechanism or external hardware for data integrity?
No, the M3008316035NX0ITBY does not require external write protection. Its STT-MRAM cell structure inherently prevents unintended writes during power transitions. The device includes built-in write-inhibit voltage detection (Vwi = 2.1–2.5V); if VCC drops below this threshold, all write operations are automatically blocked, ensuring data integrity during brownout conditions.
Can the M3008316035NX0ITBY be used as a direct replacement for standard SRAM in existing designs?
Yes, the M3008316035NX0ITBY is pin-compatible and timing-compatible with many 8Mbit x16 SRAMs using the 54-pin TSOP package. Its 35ns read/write cycle, identical control signaling (E#/G#/W#), and x16 bus allow drop-in replacement - provided the host system accommodates non-volatility (no need for battery backup) and observes power sequencing requirements during startup.
What is the maximum magnetic field immunity of the M3008316035NX0ITBY during operation?
The M3008316035NX0ITBY is rated for magnetic field immunity up to 24,000 A/m during both read and write operations. This level exceeds typical industrial electromagnetic interference (EMI) environments, including proximity to motors, solenoids, and transformers, ensuring reliable operation without shielding in factory automation and power equipment.
How does the endurance specification of 10¹⁴ write cycles translate to real-world service life?
With 10¹⁴ write cycles, the M3008316035NX0ITBY supports sustained writing at 1 million operations per second for over 3,170 years - far exceeding any practical industrial deployment. In a smart meter logging consumption every second, it would last over 3 million years, making endurance effectively unlimited for all known applications.
M3008316035NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316035NX0ITBY FAQ
1.How can I place an order for M3008316035NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0ITBY reliable?
The price and inventory of M3008316035NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3008316035NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0ITBY?
M3008316035NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0ITBY?
For technical support, including M3008316035NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0ITBY requirements.
6.How does Aetrix verify that M3008316035NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3008316035NX0ITBY?
All M3008316035NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0ITBY part is unused and in its original packaging.
Return procedure for M3008316035NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0ITBY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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