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Renesas M3008316035NX0PBCR
- Part No.:
- M3008316035NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3008316035NX0PBCR.pdf
- Description:
- IC RAM 8MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,386
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Product details
Overview
M3008316035NX0PBCR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, targeting real-time data logging in factory automation controllers.
For engineers reviewing the M3008316035NX0PBCR datasheet, M3008316035NX0PBCR pinout, M3008316035NX0PBCR application, or M3008316035NX0PBCR equivalent, this page provides verified technical context, package mapping, functional pin definitions, endurance metrics, and validated alternative options for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports byte- and word-level operations via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address control logic - delivering deterministic 35ns access timing across all densities. It requires no external backup power or capacitors and maintains data integrity under brownout conditions down to Vwi = 2.3V (typ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (524,288 × 16 organization) - supports compact firmware storage and real-time buffer applications without density overprovisioning. |
| Access Timing | 35 ns read/write cycle - enables direct drop-in replacement for legacy SRAMs in high-speed control loops without timing redesign. |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3V industrial power rails and tolerant of ±10% regulation drift. |
| Data Retention | 10 years at 105°C - guarantees long-term data integrity in sealed, thermally stressed environments like motor drives. |
| Write Endurance | 1014 cycles - eliminates wear-leveling firmware overhead and supports continuous logging at microsecond intervals. |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and industrial PLC backplanes without derating. |
| Interface | Parallel asynchronous x16 - eliminates clock tree design, jitter management, and serialization/deserialization latency. |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down), RoHS/REACH compliant, suitable for high-density PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent undefined state transitions. |
| G# | Output Enable | Active-low control for DQ[15:0] tri-state; used with W# = High for read operations. |
| W# | Write Enable | Active-low write strobe; when Low with E# Low, latches DQ data into addressed location. |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating; enables partial-word writes without read-modify-write overhead. |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing; no address multiplexing required. |
| DQ[15:0] | Bidirectional Data I/O | True x16 data path; supports simultaneous 16-bit transfers with <15 ns data hold time. |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O or core voltage rails needed. |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible timing (35ns R/W) with inherent non-volatility - removes battery/capacitor backup circuitry and associated BOM cost. |
| Unlimited write endurance | 1014 write cycles - supports continuous timestamped sensor logging in medical diagnostics without lifetime degradation. |
| Zero-latency write capability | No erase-before-write or page-programming delays - enables atomic updates in safety-critical control registers. |
| Industrial-plus thermal rating | Operates reliably up to +105°C ambient - validated for use in enclosed switchgear and motor drive enclosures. |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - immune to interference from adjacent solenoids, transformers, or motors. |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
|
Use Scenario: Real-time motion controller storing position history and fault logs during CNC machine operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known safe state and encoder timestamps. Use Value: Survives unexpected power loss without data corruption; eliminates need for external EEPROM write buffering. |
Use Scenario: Portable ultrasound unit capturing frame buffers and calibration coefficients between imaging sessions. IC Role / Device Role / Timing Role: High-reliability parameter store retaining transducer settings and patient presets. Use Value: Guarantees 10-year data retention at elevated internal temperatures without thermal derating. |
| Smart Meter | Industrial Control And Monitoring |
|
Use Scenario: Electricity meter recording tamper events, load profiles, and firmware update status across 15+ year field life. IC Role / Device Role / Timing Role: Secure, high-endurance event log memory with deterministic write latency. Use Value: Achieves >1014 write cycles - exceeds lifetime utility requirements by 4 orders of magnitude. |
Use Scenario: Distributed I/O module storing configuration parameters and diagnostic snapshots in hazardous-area process controllers. IC Role / Device Role / Timing Role: Radiation-tolerant, magnetically immune memory for SIL-2 certified systems. Use Value: Immune to 24,000 A/m magnetic fields - prevents corruption near high-current busbars or contactors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit nvSRAM with 45ns access, requires external capacitor for write-back; 85°C max operating temp. | Limited to industrial-grade environments; lacks magnetic immunity and 105°C support. | Choose only if capacitor-based backup is acceptable and thermal margin >20°C exists. |
| Infineon F-RAM FM28V202A-40-BG | 8Mbit parallel FRAM with 40ns access, unlimited endurance, but 10-year retention only at ≤85°C. | Not rated for 105°C operation; lower magnetic immunity (10,000 A/m typical). | Select when board-level magnetic noise is minimal and ambient stays below 85°C. |
Compared with CY14B108L-BA45XIT and FM28V202A-40-BG, M3008316035NX0PBCR uniquely combines 35ns speed, 105°C operation, 24,000 A/m magnetic immunity, and 10-year retention at max temperature - making it the sole option for thermally aggressive, high-noise industrial edge nodes.
Availability
M3008316035NX0PBCR is available at Aetrix Electronics and suitable for factory automation, smart metering, and industrial control applications requiring stable component supply, long-lifecycle assurance, and guaranteed 105°C operation.
Supply support for M3008316035NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3008316035NX0PBCR belongs to the M3xxx316 parallel MRAM family, engineered to replace battery-backed SRAM and legacy nvSRAM in mission-critical embedded systems demanding zero-latency non-volatility.
FAQ
What is the maximum operating temperature for M3008316035NX0PBCR?
M3008316035NX0PBCR is rated for industrial-plus operation from −40°C to +105°C. This specification is fully characterized and guaranteed per Table 17 in the datasheet, including thermal resistance (θJA = 43.98°C/W) and data retention (10 years at 105°C). No derating is required within this range.
Does M3008316035NX0PBCR require an external backup capacitor or battery?
No, M3008316035NX0PBCR does not require any external backup components. Its STT-MRAM technology provides intrinsic non-volatility - data persists through power loss without capacitors, batteries, or supercapacitors. The device enters low-power standby (ISB ≤ 3.5 mA) automatically when E# is high.
Is M3008316035NX0PBCR pin-compatible with standard 8Mbit parallel SRAMs?
M3008316035NX0PBCR uses a 48-ball FBGA footprint distinct from common 44-pin TSOP or 54-pin TSOP SRAM packages. While its signal names (E#, G#, W#, UB#, LB#, ADDR, DQ) match industry-standard parallel memory conventions, physical pinout and ball map differ - PCB layout revision is required for migration.
What is the write endurance rating of M3008316035NX0PBCR?
M3008316035NX0PBCR guarantees ≥1014 write cycles per memory location, as specified in Table 16 of the datasheet. This exceeds typical industrial system lifetime requirements by multiple orders of magnitude and eliminates wear-leveling firmware complexity.
How does M3008316035NX0PBCR handle power loss during a write operation?
M3008316035NX0PBCR incorporates write-inhibit logic that disables writes when VCC drops below Vwi = 2.3V (typ). Per Figure 5 and Table 7, all read/write operations are inhibited below this threshold, ensuring no partial or corrupted writes occur during brownout or power-down sequences.
M3008316035NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3008316035NX0PBCR FAQ
1.How can I place an order for M3008316035NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0PBCR reliable?
The price and inventory of M3008316035NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3008316035NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0PBCR?
M3008316035NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0PBCR?
For technical support, including M3008316035NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0PBCR requirements.
6.How does Aetrix verify that M3008316035NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3008316035NX0PBCR?
All M3008316035NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0PBCR part is unused and in its original packaging.
Return procedure for M3008316035NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0PBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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