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Renesas M3008316035NX0PBCY
- Part No.:
- M3008316035NX0PBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3008316035NX0PBCY.pdf
- Description:
- IC RAM 8MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,822
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Product details
Overview
M3008316035NX0PBCY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable, byte-addressable storage in real-time control systems.
For engineers reviewing the M3008316035NX0PBCY datasheet, M3008316035NX0PBCY pinout, M3008316035NX0PBCY application, or M3008316035NX0PBCY equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping to 48-ball FBGA (10mm × 10mm), endurance and retention specs, and two rigorously cross-checked alternative MRAMs for industrial embedded designs requiring zero-write-latency non-volatility.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and standard SRAM-compatible timing - including tAVAV = 35ns min, tELQV ≤ 35ns, and tWLWH ≥ 15ns - with no internal refresh or wear leveling required.
Operation relies on three active-low control signals: E# (chip enable), G# (output enable), and W# (write enable), with address decoding across ADDR[18:0] (19-bit addressing for 8Mbit = 524,288 × 16). Power-up initialization requires E#, W#, and G# to track VCC, and write inhibition activates below Vwi = 2.3V (typical), preventing corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8 Mbit (524,288 × 16 organization) |
| Interface | Parallel asynchronous x16 with UB#/LB# byte control |
| Read/Write Cycle Time | 35 ns minimum - enables direct SRAM replacement in legacy controllers without timing redesign |
| Supply Voltage | 2.7 V – 3.6 V - compatible with 3.3V industrial power rails |
| Operating Temperature | −40°C to +105°C - qualified for extended-temperature industrial automation and medical diagnostics |
| Data Retention | 10 years at 105°C - guaranteed non-volatility without backup power or capacitors |
| Endurance | 10¹⁴ write cycles - effectively unlimited for logging, configuration, and state storage |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down, RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 3.5 mA) when high |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; must be low for read access |
| W# | Write Enable | Active-low signal determining direction: low = write, high = read |
| UB# / LB# | Byte Enables | Independent control of upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[18:0] | Address Inputs | 19-bit address bus supporting full 8Mbit memory map; no A19/A20 used |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z states controlled by E#, G#, and W# per Table 4 |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | Eliminates battery backup and external EEPROM/Flash in P-SRAM applications |
| Zero latency writes | No erase-before-write or page programming delays - same timing as read |
| Unlimited endurance | 10¹⁴ write cycles enables continuous data logging without wear management |
| Industrial-plus temperature rating | Guaranteed operation up to +105°C ambient - suitable for sealed enclosures and motor drives |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - robust in high-noise industrial environments |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Storing real-time motion profiles, calibration tables, and fault logs in programmable logic controllers with no downtime during power loss. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM; serves as primary working memory with instant restore. Use Value: Eliminates battery maintenance, avoids data corruption during brownouts, and sustains 35ns deterministic access for servo loop timing. | Use Scenario: Capturing and buffering high-resolution sensor data (e.g., ultrasound echo streams) before transfer to host processor or storage. IC Role / Device Role / Timing Role: High-speed, byte-addressable frame buffer with guaranteed data persistence between imaging sessions. Use Value: Supports burst writes at full bus bandwidth without wait states; retains critical acquisition metadata even after cold start. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, tariff schedules, and consumption history in utility-grade meters operating unattended for 15+ years. IC Role / Device Role / Timing Role: Secure, long-life configuration and event log storage with cryptographic key backup. Use Value: Meets 10-year data retention at 105°C; withstands magnetic interference from nearby transformers and switching regulators. | Use Scenario: Storing routing tables, firmware patches, and session state in carrier-class edge routers deployed in harsh telecom cabinets. IC Role / Device Role / Timing Role: Fast-access, failure-resistant memory for dynamic table updates and failover recovery. Use Value: Enables sub-microsecond write commits for control-plane updates; eliminates Flash wear-out concerns in high-change-rate networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 8Mbit, 45ns access, 44-pin TSOP-44 package, −40°C to +85°C only | Lacks industrial-plus temperature rating and FBGA option; lower thermal performance (θJA = 40°C/W vs. 43.98°C/W) | Select when TSOP-44 footprint and cost sensitivity outweigh extended temperature needs |
| Cypress (Infineon) CY14B108L | 8Mbit, 45ns access, 48-ball FBGA, −40°C to +85°C, supports NVSRAM architecture with auto-store | Requires external capacitor for store-on-power-loss; not true MRAM - uses SRAM + backup controller | Prefer when legacy NVSRAM design reuse is prioritized over pure MRAM reliability and zero-capacitor operation |
Compared with M3008316035NX0PBCY, MR2A16A trades temperature range and package flexibility for TSOP-44 compatibility, while CY14B108L introduces capacitor-dependent store functionality - making M3008316035NX0PBCY the only option delivering guaranteed 105°C operation, true MRAM physics, and capacitor-free non-volatility in FBGA form.
Availability
M3008316035NX0PBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and smart energy meters requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for M3008316035NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and serial Flash in high-reliability industrial systems where data persistence, speed, and temperature resilience are non-negotiable.
FAQ
What is the memory organization of the M3008316035NX0PBCY?
The M3008316035NX0PBCY implements an 8Mbit density organized as 524,288 words × 16 bits, addressed via 19 address lines (ADDR[18:0]). This matches standard x16 SRAM footprints and supports seamless drop-in replacement in existing 8Mbit parallel memory designs without address remapping.
Does the M3008316035NX0PBCY require an external capacitor for non-volatile operation?
No, the M3008316035NX0PBCY does not require any external capacitor. As a true STT-MRAM device, it retains data inherently through magnetic storage elements - unlike NVSRAMs such as CY14B108L that depend on external capacitors to power store operations during power loss.
What is the maximum magnetic field the M3008316035NX0PBCY can withstand during operation?
The M3008316035NX0PBCY is rated for magnetic field immunity up to 24,000 A/m during both read and write operations, as specified in Table 9 and Table 11. This level of immunity ensures reliable operation near motors, transformers, and other high-field industrial equipment without data corruption.
How does the M3008316035NX0PBCY handle power-up sequencing?
The M3008316035NX0PBCY requires E#, W#, and G# to follow VCC during power-up, with tPU ≥ 1 ms from VCC reaching minimum (2.7V) before first instruction. This ensures internal latches and sense amplifiers initialize correctly - violating this sequence may cause undefined behavior or temporary read failures.
Is the M3008316035NX0PBCY pin-compatible with other densities in the M3xxx316 family?
Yes, the M3008316035NX0PBCY shares identical pinout, signal definitions, and timing behavior with M3004316035NX0PBCY, M3016316035NX0PBCY, and M3032316035NX0PBCY in the 48-ball FBGA package. Only address bus width differs internally (ADDR[17:0] to ADDR[20:0]), allowing shared PCB layout across 4–32Mbit variants.
M3008316035NX0PBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3008316035NX0PBCY FAQ
1.How can I place an order for M3008316035NX0PBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0PBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0PBCY reliable?
The price and inventory of M3008316035NX0PBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0PBCY is usually 5 days.
3.What payment methods are accepted for M3008316035NX0PBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0PBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0PBCY?
M3008316035NX0PBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0PBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0PBCY?
For technical support, including M3008316035NX0PBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0PBCY requirements.
6.How does Aetrix verify that M3008316035NX0PBCY is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0PBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0PBCY meets industry standards.
7.What is the process for return or replacement of M3008316035NX0PBCY?
All M3008316035NX0PBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0PBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0PBCY part is unused and in its original packaging.
Return procedure for M3008316035NX0PBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0PBCY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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