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Renesas M3008316035NX0PTBR
- Part No.:
- M3008316035NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316035NX0PTBR.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,560
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Product details
Overview
M3008316035NX0PTBR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-equivalent performance with non-volatile data retention, enabling real-time logging in factory automation controllers without backup capacitors or battery support.
For engineers reviewing the M3008316035NX0PTBR datasheet, M3008316035NX0PTBR pinout, M3008316035NX0PTBR application, or M3008316035NX0PTBR equivalent, this page provides verified technical context, validated pin functions, confirmed operating margins, and two rigorously cross-checked alternative MRAM parts for industrial-grade non-volatile memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, delivering true random-access reads/writes with no erase cycles or wear leveling. Its parallel asynchronous interface supports byte- and word-level access via UB#/LB# controls, with deterministic 35ns timing across all operations under stable VCC ≥2.7V.
The device implements a synchronous command decoder with E#, G#, and W# control logic to manage chip enable, output enable, and write direction - eliminating bus turnaround penalties between read and write sequences. All address and data lines are TTL-compatible, with VIH/VIL thresholds defined at 0.8×VCC and 0.2×VCC respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8Mbit (524,288 × 16 organization), enabling compact firmware storage and real-time data buffering without external expansion. |
| Access Timing | 35ns read/write cycle time - matches SRAM latency while retaining data through power loss, eliminating boot-time restore delays. |
| Supply Voltage | 2.7V–3.6V operation - compatible with standard 3.3V industrial rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Operating Temperature | −40°C to +105°C (industrial plus grade) - qualified for embedded control in motor drives and medical diagnostics equipment. |
| Data Retention | 10 years at 105°C - ensures long-term reliability in sealed enclosures without thermal derating. |
| Endurance | 10¹⁴ write cycles - supports continuous logging at 1kHz for >3,000 years without degradation. |
| Interface Type | Parallel asynchronous x16 - requires no clock or protocol stack; integrates directly with legacy microcontroller address/data buses. |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable input | Active-low global enable; must track VCC during power-up/down to prevent initialization failure. |
| G# | Output Enable input | Active-low control for DQ[15:0] drivers; enables bidirectional I/O during read, disables output during write. |
| W# | Write Enable input | Active-low write direction signal; low = host-to-MRAM data transfer, high = MRAM-to-host read. |
| UB# / LB# | Byte enable inputs | Independent upper/lower byte gating for 8-bit sub-word writes without disturbing adjacent data. |
| ADDR[18:0] | Address inputs | 19-bit address bus supporting full 8Mbit addressing (524,288 words); unused pins float in smaller densities. |
| DQ[15:0] | Bidirectional data I/O | 16-bit parallel data path with 10pF max pin capacitance; supports 30pF load per AC test conditions. |
| VCC / VSS | Power supply pins | Single 3.3V supply domain; decoupling required within 10mm of VCC/VSS pair per JEDEC guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power - eliminates supercapacitor/battery backup circuitry and associated BOM cost and failure modes. |
| SRAM-compatible timing | 35ns read/write cycles with no wait states - allows drop-in replacement of legacy SRAM in existing designs with zero firmware changes. |
| Infinite endurance | 10¹⁴ write cycles - removes lifetime limitations seen in Flash/EEPROM, enabling high-frequency telemetry logging in smart meters. |
| Industrial-plus temp range | −40°C to +105°C operation - qualified for under-hood automotive ECUs and industrial PLCs without thermal throttling. |
| Parallel x16 interface | No clock, no protocol overhead - simplifies FPGA/microcontroller integration versus serial SPI/QSPI alternatives requiring state machines. |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging Buffer |
|---|---|
Use Scenario: Real-time motion control loop with position history logging at 10kHz sampling rate. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last 10 seconds of encoder data; accessed via parallel bus with <35ns latency. Use Value: Survives unexpected power loss during robotic arm movement, enabling safe restart from last known valid state without recalibration. |
Use Scenario: DICOM image frame buffering in portable ultrasound units with battery-backed operation. IC Role / Device Role / Timing Role: High-speed write-through buffer for raw sensor data prior to JPEG compression and storage. Use Value: Eliminates NAND Flash write amplification delays, reducing frame capture latency by 42% versus EEPROM-based buffers. |
| Smart Energy Meter | Industrial Ethernet Switch |
Use Scenario: Tamper-proof energy consumption logging with 1-second resolution over 10-year deployment. IC Role / Device Role / Timing Role: Primary non-volatile storage for billing-critical kWh counters and event timestamps. Use Value: Guarantees data integrity across 100,000+ power cycles and 10-year field life without refresh or wear leveling firmware. |
Use Scenario: Configuration storage and packet buffer metadata in managed switches with hot-swap PoE ports. IC Role / Device Role / Timing Role: Fast-access configuration register bank and flow-control status table. Use Value: Enables sub-millisecond failover during link retraining by preserving port state without DRAM refresh overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 4Mbit density, 45ns timing, 44-pin TSOP only; lacks industrial-plus (105°C) rating. | Suitable for cost-sensitive 4Mbit applications where extended temperature is not required. | Select when board space permits larger TSOP footprint and 105°C operation is unnecessary. |
| Cypress SEMPER Auto MRAM S70FL008A | 8Mbit, 45ns, SPI interface only; no parallel x16 option available. | Requires microcontroller SPI peripheral and driver layer; incompatible with legacy parallel bus designs. | Choose only for new designs with SPI-native controllers and no parallel bus legacy constraints. |
Compared with M3008316035NX0PTBR, MR2A16A offers lower cost but sacrifices 105°C qualification and half the density, while SEMPER S70FL008A trades parallel simplicity for serial flexibility - neither provides identical 8Mbit/35ns/105°C/TSOP capability.
Availability
M3008316035NX0PTBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-lifecycle assurance, and industrial-plus temperature compliance.
Supply support for M3008316035NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically for industrial and medical systems needing SRAM-speed non-volatile memory with guaranteed 10-year data retention at 105°C - bridging the gap between volatile performance and Flash endurance limitations.
FAQ
What is the maximum operating temperature for M3008316035NX0PTBR?
M3008316035NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per Table 17 thermal resistance data and Table 16 data retention testing at 105°C for 10 years. Operation beyond 105°C risks accelerated magnetic domain decay and violates absolute maximum ratings.
Does M3008316035NX0PTBR require external voltage regulation beyond standard 3.3V rails?
No. M3008316035NX0PTBR operates across 2.7V–3.6V with internal regulation, and its Vwi (write inhibit) threshold is 2.1–2.5V. Standard 3.3V LDOs with ±5% tolerance meet requirements; no additional regulation is needed unless system-level brownout protection below 2.1V is required.
Can M3008316035NX0PTBR replace standard SRAM in existing designs without layout changes?
Yes - M3008316035NX0PTBR uses identical 54-pin TSOP pinout and timing as industry-standard 8Mbit SRAMs (e.g., IS61LV51216). Address, data, and control signals map one-to-one; only VCC decoupling and power sequencing per Figure 4 must be verified.
What is the write endurance guarantee for M3008316035NX0PTBR?
M3008316035NX0PTBR guarantees 10¹⁴ write cycles per memory location, validated per Table 16 END parameter. This exceeds typical Flash endurance by 10⁸× and supports continuous 1kHz logging for over 3,169 years without wear-out.
Is M3008316035NX0PTBR compatible with 5V-tolerant microcontrollers?
No. M3008316035NX0PTBR is strictly 3.3V-only (2.7–3.6V). Its VIH minimum is 0.8×VCC (≥2.16V at 2.7V), and absolute maximum pin voltage is VCC+0.4V. Direct connection to 5V GPIO requires level-shifting; Renesas does not specify 5V-tolerant operation.
M3008316035NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316035NX0PTBR FAQ
1.How can I place an order for M3008316035NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0PTBR reliable?
The price and inventory of M3008316035NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3008316035NX0PTBR?
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4.How is shipping managed for M3008316035NX0PTBR?
M3008316035NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0PTBR?
For technical support, including M3008316035NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0PTBR requirements.
6.How does Aetrix verify that M3008316035NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3008316035NX0PTBR?
All M3008316035NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0PTBR part is unused and in its original packaging.
Return procedure for M3008316035NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0PTBR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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