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Renesas M3008316035NX0PTBY
- Part No.:
- M3008316035NX0PTBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316035NX0PTBY.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,987
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Product details
Overview
M3008316035NX0PTBY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-equivalent performance with non-volatility, enabling real-time data logging in factory automation controllers without battery backup or write endurance concerns.
For engineers reviewing the M3008316035NX0PTBY datasheet, M3008316035NX0PTBY pinout, M3008316035NX0PTBY application, or M3008316035NX0PTBY equivalent, this page provides verified technical context, package-specific pin assignments, endurance and timing specifications, MRAM-specific initialization requirements, and validated alternative options for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes with no erase cycles or wear leveling. Its parallel x16 interface operates asynchronously with separate chip enable (E#), output enable (G#), and write enable (W#) controls, supporting byte-selectable writes via UB#/LB#.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address control logic - all optimized for deterministic 35ns access timing across −40°C to +105°C. Power-up initialization requires E#, W#, and G# to track VCC, and write operations are inhibited below Vwi = 2.1–2.5V to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (524,288 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control signals |
| Read/Write Cycle Time | 35ns minimum - enables SRAM-like system timing without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of ripple |
| Operating Temperature | −40°C to +105°C - qualified for extended-temperature industrial control and medical diagnostics |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered storage |
| Endurance | 10¹⁴ write cycles - eliminates lifetime wear-out concerns in high-frequency logging |
| Package | 48-ball FBGA (10mm × 10mm) - surface-mount compatible with automated assembly |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down, top view), RoHS and REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent initialization failure |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers; determines read data output timing |
| W# | Write Enable | Active-low signal that gates write data flow; high during read, low during write |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; supports independent lower-byte write operations |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing; ADDR[19:20] are NC for 8Mbit density |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z control; supports simultaneous upper/lower byte reads/writes |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; both VCC and VSS pins required for stable operation |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write timing with no write delay or erase overhead - replaces battery-backed SRAM without firmware changes |
| pMTJ STT-MRAM technology | 40nm node enables high density and low power; immune to radiation-induced bit flips in medical/industrial environments |
| Byte-selectable write control | UB#/LB# pins allow independent 8-bit writes - reduces bus traffic and power vs. full-word operations |
| Industrial-plus temperature rating | Validated operation from −40°C to +105°C - suitable for enclosed motor drives and outdoor smart meters |
| Write-inhibit voltage threshold | Vwi = 2.1–2.5V prevents corrupted writes during brownout - eliminates need for external supervisor ICs |
Applications
| Factory Automation PLCs | Multifunction Printers |
|---|---|
Use Scenario: Real-time motion control parameter storage and firmware update buffering in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile working memory holding axis calibration tables and I/O state snapshots between power cycles. Use Value: Eliminates supercapacitor backup circuitry while maintaining 35ns access for jitter-free servo loop updates. |
Use Scenario: Storing print job metadata, font caches, and configuration profiles across power cycles in enterprise-grade printers. IC Role / Device Role / Timing Role: High-endurance parallel memory interfacing directly to printer SoC's memory controller for zero-latency job queuing. Use Value: Supports 10¹⁴ write cycles - exceeds lifetime print volume requirements without degradation or refresh overhead. |
| Industrial Control & Monitoring | Medical Diagnostics Equipment |
Use Scenario: Logging sensor fusion data and alarm history in distributed I/O modules deployed in harsh factory environments. IC Role / Device Role / Timing Role: Primary non-volatile buffer for time-stamped analog/digital readings captured at 1kHz+ rates. Use Value: 10-year data retention at 105°C ensures integrity in sealed enclosures with no thermal derating needed. |
Use Scenario: Storing calibration coefficients, patient session logs, and DICOM header templates in portable ultrasound and imaging systems. IC Role / Device Role / Timing Role: Radiation-tolerant memory for critical configuration and audit trail storage where data loss is unacceptable. Use Value: pMTJ STT-MRAM immunity to magnetic fields up to 24,000 A/m prevents corruption near MRI-compatible components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit nvSRAM with 45ns access, 3.3V, −40°C to +85°C; requires external capacitor for write-back | Limited to industrial (not industrial-plus) temp range; lacks MRAM's infinite endurance and magnetic immunity | Choose when legacy nvSRAM footprint compatibility is mandatory and extended temperature is not required. |
| Infineon Q8028A16S35N | 8Mbit parallel MRAM, 35ns, 3.3V, −40°C to +105°C, 48-ball FBGA - identical timing and temp spec | Same pMTJ STT-MRAM architecture; differs in pin assignment (no dedicated LB#/UB# - uses mask write mode) | Choose when board layout allows re-mapping of byte-enable logic and JEDEC-compliant MRAM sourcing is preferred. |
Compared with CY14B108L-BA45XIT, M3008316035NX0PTBY eliminates capacitor-dependent write-back and extends temperature range; compared with Q8028A16S35N, it offers native byte-select control reducing FPGA/ASIC glue logic complexity.
Availability
M3008316035NX0PTBY is available at Aetrix Electronics and suitable for factory automation PLCs, multifunction printers, and industrial control & monitoring systems requiring stable component supply, long-lifecycle support, and guaranteed MRAM performance under extended temperature stress.
Supply support for M3008316035NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3008316035NX0PTBY belongs to Renesas' Parallel MRAM product line, designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems demanding zero-write-latency, infinite endurance, and extended-temperature reliability.
FAQ
What is the memory organization of M3008316035NX0PTBY?
M3008316035NX0PTBY has an 8Mbit density organized as 524,288 words × 16 bits. This corresponds to a 19-bit address bus (ADDR[18:0]), with ADDR[19] and ADDR[20] designated as no-connect (NC) for this density. The x16 interface enables full-word transfers per cycle, optimizing bandwidth for industrial processor interfaces.
Does M3008316035NX0PTBY require external hardware for write protection during power loss?
No. M3008316035NX0PTBY incorporates internal write-inhibit logic that disables writes when VCC falls below Vwi (2.1–2.5V), preventing data corruption during brownout. This eliminates the need for external voltage supervisors or backup capacitors - a key advantage over nvSRAM solutions like the Cypress CY14B108L series.
How does the 48-ball FBGA package of M3008316035NX0PTBY differ from TSOP variants in the same family?
The 48-ball FBGA (10mm × 10mm) used by M3008316035NX0PTBY supports densities up to 32Mbit and offers superior thermal performance (θJA = 42.67°C/W) versus 54-pin TSOP (θJA = 52.78°C/W). It also provides more consistent signal integrity for high-speed 35ns timing due to shorter interconnects and ground/power ball distribution.
What is the endurance specification of M3008316035NX0PTBY, and how is it validated?
M3008316035NX0PTBY is rated for 10¹⁴ write cycles - effectively unlimited for all industrial applications. This value is derived from accelerated life testing per JEDEC standards and reflects the intrinsic physics of pMTJ STT-MRAM switching, which causes no material degradation. Unlike Flash or EEPROM, no wear-leveling firmware is required.
Can M3008316035NX0PTBY be used as a direct replacement for standard SRAM in existing designs?
Yes - M3008316035NX0PTBY is pin-compatible with many 3.3V, x16 parallel SRAMs in 48-ball FBGA packages and matches SRAM timing (35ns read/write). However, designers must ensure E#, W#, and G# signals track VCC during power-up/down per Renesas initialization requirements, and verify UB#/LB# usage aligns with existing byte-enable logic.
M3008316035NX0PTBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316035NX0PTBY FAQ
1.How can I place an order for M3008316035NX0PTBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316035NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316035NX0PTBY reliable?
The price and inventory of M3008316035NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316035NX0PTBY is usually 5 days.
3.What payment methods are accepted for M3008316035NX0PTBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316035NX0PTBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316035NX0PTBY?
M3008316035NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316035NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316035NX0PTBY?
For technical support, including M3008316035NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316035NX0PTBY requirements.
6.How does Aetrix verify that M3008316035NX0PTBY is sourced from the original manufacturer or authorized distributors?
All M3008316035NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316035NX0PTBY meets industry standards.
7.What is the process for return or replacement of M3008316035NX0PTBY?
All M3008316035NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316035NX0PTBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316035NX0PTBY part is unused and in its original packaging.
Return procedure for M3008316035NX0PTBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316035NX0PTBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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