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Renesas M3008316045NX0IBCR
- Part No.:
- M3008316045NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3008316045NX0IBCR.pdf
- Description:
- IC RAM 8MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,142
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Product details
Overview
M3008316045NX0IBCR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply voltage, and industrial temperature range (−40°C to +85°C). It uses 40nm pMTJ STT-MRAM technology, delivers non-volatile SRAM-compatible performance, and is packaged in a 48-ball FBGA (10mm × 10mm) for space-constrained industrial control and medical diagnostics systems.
For engineers reviewing the M3008316045NX0IBCR datasheet, M3008316045NX0IBCR pinout, M3008316045NX0IBCR application, or M3008316045NX0IBCR equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and confirmed alternative options - all aligned to the June 2023 Renesas specification release for the M3xxx316 family.
Technical Context
The M3008316045NX0IBCR implements a true random-access, byte-selectable MRAM array organized as 524,288 × 16 bits. Its parallel asynchronous interface uses active-low E#, G#, W#, UB#, and LB# control signals to manage chip enable, output enable, write enable, and upper/lower byte selection - enabling independent 8-bit writes without internal address sequencing.
It operates using spin-transfer torque (STT) switching on perpendicular magnetic tunnel junctions (pMTJ), delivering 10¹⁴ write cycles and 10-year data retention at 105°C. Power-up initialization requires E#, W#, and G# to track VCC, and magnetic immunity is rated to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (524,288 × 16 organization) |
| Access Time | 35ns read/write cycle - enables SRAM-like system timing without refresh or wear leveling logic |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Operating Temp | −40°C to +85°C - qualified for industrial environments including factory automation and smart metering |
| Endurance | 10¹⁴ write cycles - eliminates lifetime concerns in high-frequency logging or configuration storage |
| Data Retention | 10 years at 105°C - ensures long-term reliability in sealed or thermally stressed enclosures |
| Package | 48-ball FBGA (10mm × 10mm) - supports fine-pitch PCB layouts and thermal dissipation via exposed pad (θJA = 42.67°C/W) |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down, RoHS-compliant) with 4-layer PCB routing support and thermal pad for enhanced heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent corruption |
| G# | Output Enable | Active-low control for bidirectional DQ[15:0] drivers; determines read vs. high-impedance state |
| W# | Write Enable | Active-low signal that latches DQ[15:0] data into memory when E# is low |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word writes without masking logic |
| ADDR[18:0] | Address Inputs | 19-bit address bus supporting 524,288 locations; no internal address incrementing required |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; supports simultaneous upper/lower byte access with separate UB#/LB# control |
| VCC / VSS | Power & Ground | Single 3.3V supply domain for core and I/O; decoupling required within 10mm of package |
| A20, NC, DNU | No Connect / Do Not Use | A20 is unused for 8Mbit density; NC pins may be routed or grounded; DNU balls must remain unconnected |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates backup batteries, capacitors, or firmware overhead for data persistence across power cycles |
| True random access writes | Enables direct byte/word updates at any address without block erase - critical for real-time parameter storage |
| 10¹⁴ write endurance | Supports continuous logging at 1kHz for >3,000 years - removes wear-leveling firmware complexity |
| 40nm pMTJ STT-MRAM process | Delivers stable magnetic switching at low voltage, reducing dynamic power vs. older toggle-MRAM |
| Industrial temperature qualification | Validated operation from −40°C to +85°C - suitable for uncontrolled ambient deployments |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and motion-control trajectory buffers in PLCs and CNC controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing sub-40ns read/write access for deterministic motion loop execution. Use Value: Eliminates boot-time reinitialization delays and avoids EEPROM wear-out in high-cycle servo tuning applications. | Use Scenario: Holding patient waveform history, device self-test logs, and firmware update staging in portable ultrasound and ECG units. IC Role / Device Role / Timing Role: Persistent SRAM replacement ensuring zero-latency access to critical diagnostic data during battery switchover. Use Value: Guarantees data integrity across unexpected power loss while meeting IEC 60601-1 safety-critical retention requirements. |
| Smart Meter | Industrial Control And Monitoring |
Use Scenario: Recording energy consumption snapshots, tamper events, and tariff schedules in AMI meters operating in outdoor enclosures. IC Role / Device Role / Timing Role: High-endurance non-volatile memory handling 10,000+ daily writes under wide-temperature conditions. Use Value: Achieves 10-year field life without degradation - surpassing flash endurance limits in utility-grade deployments. | Use Scenario: Caching configuration parameters, alarm thresholds, and historical trend data in distributed I/O modules and RTUs. IC Role / Device Role / Timing Role: Low-power, radiation-tolerant memory supporting deterministic polling cycles in harsh electrical environments. Use Value: Maintains operational continuity during voltage sags and EMI transients where flash would stall or corrupt. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit nvSRAM with 45ns access, 3.3V, 48-TSOP; requires external capacitor for STORE/RECALL | Capacitor-dependent data retention introduces BOM cost and layout sensitivity not present in M3008316045NX0IBCR | Select when legacy TSOP footprint compatibility is mandatory and capacitor management is acceptable |
| Everspin MR25H10CDF | 8Mbit SPI MRAM, 3.3V, 8-pin SOIC; serial interface limits bandwidth vs. parallel x16 bus | Lacks byte-select capability and has ~5× slower effective throughput than M3008316045NX0IBCR's 35ns parallel interface | Select only for space-constrained designs where SPI integration simplifies controller interface over parallel bus logic |
Compared with CY14B108L-BA45XIT and MR25H10CDF, the M3008316045NX0IBCR delivers capacitor-free non-volatility, true parallel x16 bandwidth, and byte-selectable writes - making it optimal for deterministic, high-throughput industrial memory subsystems requiring zero-retention overhead.
Availability
M3008316045NX0IBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for M3008316045NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 product line was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data integrity, speed, and endurance cannot be compromised.
FAQ
What is the memory organization of the M3008316045NX0IBCR?
The M3008316045NX0IBCR is organized as 524,288 words × 16 bits (8Mbit total), with full x16 parallel access. Address lines ADDR[18:0] are used - 19 bits - and no internal address incrementing or page mode is required. This structure enables true random read/write to any location without latency penalties, matching SRAM behavior while retaining data through power loss.
Does the M3008316045NX0IBCR require a backup capacitor or battery?
No, the M3008316045NX0IBCR does not require any external capacitor or battery. As a magnetoresistive RAM, it retains data inherently due to magnetic domain stability - unlike nvSRAM or battery-backed SRAM. All data remains intact after power removal, with no STORE/RECALL sequence, no capacitor aging concerns, and no risk of data loss during brownout events above Vwi (2.1V).
What is the maximum write endurance rating for the M3008316045NX0IBCR?
The M3008316045NX0IBCR is rated for 10¹⁴ write cycles per memory location - verified per Renesas Table 16. This exceeds typical flash endurance by 10⁸× and eliminates the need for wear-leveling algorithms or spare-block management in firmware. At 1,000 writes/second, the device supports over 3,000 years of continuous operation before reaching end-of-life.
Can the M3008316045NX0IBCR operate reliably in high-magnetic-noise environments?
Yes, the M3008316045NX0IBCR is characterized for magnetic immunity up to 24,000 A/m during both read and write operations (Renesas Table 9 and Table 11). This exceeds typical industrial motor drive or transformer leakage fields, ensuring robust operation near motors, solenoids, or MRI-adjacent equipment without shielding or derating.
Is the M3008316045NX0IBCR pin-compatible with other densities in the M3xxx316 family?
The M3008316045NX0IBCR shares identical pinout, signal definitions, and timing behavior with M3004316, M3016316, and M3032316 in the 48-ball FBGA package - including consistent ADDR[18:0] usage for 8Mbit and ADDR[20:0] for 32Mbit. However, address pin count differs by density (e.g., 32Mbit uses ADDR[20:0]), so PCB layout must match the specific density's address width; full pin compatibility applies only within same-density variants.
M3008316045NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3008316045NX0IBCR FAQ
1.How can I place an order for M3008316045NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316045NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316045NX0IBCR reliable?
The price and inventory of M3008316045NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316045NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3008316045NX0IBCR?
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4.How is shipping managed for M3008316045NX0IBCR?
M3008316045NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316045NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316045NX0IBCR?
For technical support, including M3008316045NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316045NX0IBCR requirements.
6.How does Aetrix verify that M3008316045NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3008316045NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316045NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3008316045NX0IBCR?
All M3008316045NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316045NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316045NX0IBCR part is unused and in its original packaging.
Return procedure for M3008316045NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316045NX0IBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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